准一维链状半导体BiSeI 低温物性研究

AVBVICVII (A=Bi, Sb; B=S, Se; C=I, Br) 体系是一类典型的准一维链状半导体材料. 由于其特殊的晶格和能带结构,AVBVICVII 体系表现出丰富的物性, 如: 铁电、 压电、 热电和光电导特性等, 在太阳能电池、 光电探测器及超级电容器等领域有着广泛的应用前景, 引起了人们广泛的研究兴趣. 其中,SbSI 在低温下伴随铁电自发极化会出现反常的负热膨胀现象. BiSeI 与SbSI 结构类似, 低温下的物性值得进一步研究. 本工作利用物理气相输运法制备了高质量的 BiSeI 单晶样品, 并利用 Raman 光谱、 电输运测量、XRD 及光致发光谱(PL) 对其低温下的电输运、振动及结构性质进行了系统的研究. 随温度降低,PL 光谱结果表明低温下能隙内出现激子能级. 低温 Raman 及XRD 结果表明测试温区(10~300 K) 内其结构对称性无明显改变. 然而随温度降低, 晶格在200 ~300 K 范围内发生明显的负热膨胀现象. 类比于SbSI, 我们将 BiSeI 中的负热膨胀现象归因于410 K 发生的反铁电相变. 此工作的顺利开展有利于人们进一步理解 AVBVICVII 体系低温下负热膨胀背后的物理机制以及促进其在未来零膨胀材料领域中的应用.     

Pressure-induced enhancement of optoelectronic properties in PtS_2

PtS_2, which is one of the group-10 transition metal dichalcogenides, attracts increasing attention due to its extraordinary properties under external modulations as predicted by theory, such as tunable bandgap and indirect-to-direct gap transition under strain; however, these properties have not been verified experimentally. Here we report the first experimental exploration of its optoelectronic properties under external pressure. We find that the photocurrent is weakly pressuredependent below 3 GPa but increases significantly in the pressure range of 3 GPa–4 GPa, with a maximum ～ 6 times higher than that at ambient pressure. X-ray diffraction data shows that no structural phase transition can be observed up to26.8 GPa, which indicates a stable lattice structure of PtS_2 under high pressure. This is further supported by our Raman measurements with an observation of linear blue-shifts of the two Raman-active modes to 6.4 GPa. The pressure-enhanced photocurrent is related to the indirect-to-direct/quasi-direct bandgap transition under pressure, resembling the gap behavior under compression strain as predicted theoretically.     

Co替代效应对Fe_(1+y)Te单晶磁性和输运性质的影响

我们通过自助熔剂法制备了Fe1+y-xCoxTe(x=0,0.04,0.09)系列单晶,研究了Fe位Co替代效应对Fe1+yTe母体的磁性、电阻以及比热性质的影响.研究结果表明Co的替代效应明显的抑制了母体Fe1.05Te的反铁磁结构相变,并在低温出现了自旋玻璃态.当掺杂量x=0.09时,电阻率曲线呈现半导体行为.低温比热曲线拟合结果显示费米面附近的态密度随掺杂量变化不大,表明Co对Fe的替代效应主要表现为引入了局域磁矩.     

Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film

Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.     

非双交换作用巨磁电阻材料Fe1+xCr2-xS4的磁性

Fe1+xCr2-xS4(x=0,0.1)是不存在双交换作用和Jahn-Teller畸变的巨磁电阻材料,Missbauer谱指认,对于FeCr2S4,Fe离子以Fe2+形式占据在四面体间隙形成Fe亚晶格,Cr离子以Cr3+的形式占据八面体间隙形成Cr亚晶格;对于Fe1.1Cr1.9S4,过量的的Fe离子替代Cr离子以Fe3+形式存在.电子自旋共振的结果表明在居里温度Tc以上,两个样品都只有单一吸收峰,而在T1以下(T1对应于Tc以下电阻率最小值的温度),ESR谱中原始的顺磁峰同时劈裂为一支高场峰和一支低场峰.该体系的微观磁性显示,对于FeCr2S4,Fe、Cr亚晶格的自旋同时进入铁磁态,而这两个亚晶格的磁矩彼此反平行排列;对于Fe1.1Cr1.9S4,过量的Fe离子的自旋反平行于Cr离子,这不但削弱了Cr亚晶格的内场,同时也使两个亚晶格之间的耦合减弱.由此,Fe1+xCr2-xS4反常的输运行为可以被很好地理解.     

FeCr2-x GaxS4的磁性与巨磁电阻效应

研究了没有双交换作用的FeCr^2-x Ga_xS₄材料的磁性以及CMR效应.实验指出：Ga对Cr的替代破坏了Cr亚晶格自旋的相互作用,使体系FM性增强从而导致T_c提高,但PM到FM相变的幅度随掺杂逐渐降低.ESR给出的微观磁性指出Fe,Cr亚晶格自旋在温度低于T_c时各自是FM排列,而两者之间是AFM排列,以致对未掺杂样品,体系的宏观磁矩M相互抵消,掺杂样品在T_c将出现固有FM性. Ga掺杂使发生MR的峰值温度提高,但MR值降低.     

非双交换作用巨磁电阻材料FeCr2-xGaxS4的输运行为

FeCr2S4是不存在双交换作用和Jahn-Teller畸变的巨磁电阻材料,本文用不变价的非磁性的Ca部分地替代Cr,发现体系的居里温度和出现巨磁电阻的峰值都向高温移动.实验上指出Ga替代减弱了Cr离子之间的自旋耦合,体系的铁磁性增强,使极化子载流推向高温区,低于居里温度退局域的裸子运动在磁性半导体中,所以巨磁电阻效应一直保留到远低于居里温度的温区.     

Pressure-Induced Metallization Accompanied by Elongated S–S Dimer in Charge Transfer Insulator NiS_2

The insulator-metal transition triggered by pressure in charge transfer insulator NiS2 is investigated by combining high-pressure electrical transport,synchrotron x-ray diffraction and Raman spectroscopy measurements up to40-50 GPa.Upon compression,we show that the metallization firstly appears in the low temperature region at～3.2 GPa and then extends to room temperature at～8.0 GPa.During the insulator-metal transition,the bond length of S-S dimer extracted from the synchrotron x-ray diffraction increases with pressure,which is supported by the observation of abnormal red-shift of the Raman modes between 3.2 and 7.1 GPa.Considering the decreasing bonding-antibonding splitting due to the expansion of S-S dimer,the charge gap between the S-ppπ* band and the upper Hubbard band of Ni-3 d eg state is remarkabl.y decreased.These results consistently indicate that the elongated S-S dimer plays a predominant role in the insulator-metal transition under high pressure,even though the p-d hybridization is enhanced simultaneously,in accordance with a scenario of charge-gap-controlled type.     

Mn_(1-x)Zn_xCr_2O_4(0.0≤x≤1.0)晶体结构与磁性研究

通过固相反应法制备了尖晶石氧化物Mn1-xZnxCr2O4(0.0≤x≤1.0)多晶系列样品,并对其晶体结构和磁性进行了系统研究.研究结果表明,系列样品具有立方尖晶石结构,随Zn掺杂浓度x增大,晶格常数单调减小,体系的阻挫因子逐渐增大.低温下MnCr2O4表现为共线亚铁磁和螺旋亚铁磁的共存.当x≤0.4时,随着x增大,4.5T磁场下所测量的磁化强度逐渐减小,矫顽力逐渐增大,表明体系中的螺旋亚铁磁成分逐渐增多.随着x进一步增加,样品x=0.6和0.8表现为自旋玻璃态特征,最终在x=1.0时转变为强阻挫的反铁磁态.     

准一维电荷有序半导体(NbSe4)3I低温物性研究

近期,准一维电荷密度波(CDW)材料(TaSe_4)_2I的低温相被报道为轴子绝缘体[Nature 575,315(2019)],引起了广泛的关注.电荷有序半导体(NbSe_4)_3I与(TaSe_4)_2I属于同一个体系,晶体结构也表现为准一维的链状结构,低温下的物态值得进一步研究.本工作利用拉曼光谱和电输运测量实验方法对化学气相输运法(CVT)制备的高质量type-II(NbSe_4)_3I单晶样品进行了低温下的电输运和振动性质研究.通过实验研究发现,(NbSe_4)_3I在低温下并不存在轴子绝缘态.此外,电输运实验表明(NbSe_4)_3I在T_(C1)=270.4K处发生了第一次结构相变,即P4/mnc (D~6_(4h))→P42_1c (D~4_(2d)).随温度进一步降低,拉曼光谱测试发现在T_(C2)=180K和T_(C3)=110K附近有新峰的出现,分别归因于反铁电(AFE)长程有序相的形成而导致的第二次结构相变以及对称性进一步降低导致的第三次结构相变.值得一提的是,与其他拉曼峰的演化不同,57.4cm~(-1)右侧出现的新峰在T_(C3)以下迅速向高波数移动,发生明显的蓝移,且伴随强度的急剧增强,有可能在低温温度传感器领域有着潜在的应用前景.