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This paper studies an oxide/silicon core/shell nanowire MOSFET(OS-CSNM).Through three-dimensional device simulations,we have demonstrated that the OS-CSNM has a lower leakage current and higher I on /I off ratio after introducing the oxide core into a traditional nanowire MOSFET(TNM).The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off,drain induced barrier lowering and subthreshold swing degradation.Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM. 相似文献
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