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We report the formation and local electronic
structure of Ge clusters on the Si(111)-7$\times $7 surface
studied by using variable temperature scanning tunnelling microscopy
(VT-STM) and low-temperature scanning tunnelling spectroscopy (STS).
Atom-resolved STM images reveal that the Ge atoms are prone to
forming clusters with 1.0~nm in diameter for coverage up to 0.12~ML.
Such Ge clusters preferentially nucleate at the centre of the
faulted-half unit cells, leading to the `dark sites'
of Si centre adatoms from the surrounding three unfaulted-half
unit cells in filled-state images.
Bias-dependent STM images show the charge transfer
from the neighbouring Si adatoms to Ge clusters.
Low-temperature STS of the Ge clusters reveals
that there is a band gap on the Ge cluster and the large voltage
threshold is about 0.9~V. 相似文献
2.
Co-Zr/Pd多层膜由高频溅射方法制得.磁性合金Co-Zr层厚度固定为1.8nm,改变Pd层厚度0.5—6nm.由振动样品磁强计测量,发现随Pd层厚度增加,磁化强度发生周期性振荡变化,周期约为1nm,这是由Pd层的极化振荡引起的.经X射线衍射测得Pd层厚度超过1.3nm时,磁性合金Co-Zr层发生晶化,而厚的Co-Zr单层膜是非晶结构.X射线大角衍射图中的超晶格峰表明,在Co-Zr层和Pd层之间存在相关生长.而且还发现,随Pd层厚度增加,样品在垂直膜面方向的晶粒尺寸及fcc(111)面的面间距发生周期性
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