| Formation and local electronic structure of Ge clusters on Si（111）-7×7 surfaces |
| |
| 引用本文： | 马海峰,徐明春,杨冰,时东霞,郭海明,庞世瑾,高鸿钧.Formation and local electronic structure of Ge clusters on Si（111）-7×7 surfaces[J].中国物理 B,2007,16(9):2661-2664. |
| |
| 作者姓名： | 马海峰 徐明春 杨冰 时东霞 郭海明 庞世瑾 高鸿钧 |
| |
| 作者单位： | Nanoscale Physics and Devices Laboratory, Institute of Physics,
Chinese Academy of Sciences, Beijing 100080, China;Nanoscale Physics and Devices Laboratory, Institute of Physics,
Chinese Academy of Sciences, Beijing 100080, China;Nanoscale Physics and Devices Laboratory, Institute of Physics,
Chinese Academy of Sciences, Beijing 100080, China;Nanoscale Physics and Devices Laboratory, Institute of Physics,
Chinese Academy of Sciences, Beijing 100080, China;Nanoscale Physics and Devices Laboratory, Institute of Physics,
Chinese Academy of Sciences, Beijing 100080, China;Nanoscale Physics and Devices Laboratory, Institute of Physics,
Chinese Academy of Sciences, Beijing 100080, China;Nanoscale Physics and Devices Laboratory, Institute of Physics,
Chinese Academy of Sciences, Beijing 100080, China |
| |
| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant Nos~90406022 and 10674159). |
| |
| 摘 要： | We report the formation and local electronic structure of Ge clusters on the Si（111）-7×7 surface studied by using variable temperature scanning tunnelling microscopy （VT-STM） and low-temperature scanning tunnelling spectroscopy （STS）. Atom-resolved STM images reveal that the Ce atoms are prone to forming clusters with 1.0 nm in diameter for coverage up to 0.12 ML. Such Ce clusters preferentially nucleate at the centre of the faulted-half unit cells, leading to the ＇dark sites＇ of Si centre adatoms from the surrounding three unfaulted-half unit cells in filled-state images. Biasdependent STM images show the charge transfer from the neighbouring Si adatoms to Ce clusters. Low-temperature STS of the Ce clusters reveals that there is a band gap on the Ce cluster and the large voltage threshold is about 0.9 V.
|
| 关 键 词： | 隧道效应 显微镜方法 电子学 锗簇 |
| 收稿时间： | 2007-01-24 |
| 修稿时间： | 4/4/2007 12:00:00 AM |
Formation and local electronic structure of Ge clusters on Si(111)-7×7 surfaces |
| |
| Ma Hai-Feng,Xu Ming-Chun,Yang Bing,Shi Dong-Xi,Guo Hai-Ming,Pang Shi-Jin and Gao Hong-Jun.Formation and local electronic structure of Ge clusters on Si(111)-7×7 surfaces[J].Chinese Physics B,2007,16(9):2661-2664. |
| |
| Authors: | Ma Hai-Feng Xu Ming-Chun Yang Bing Shi Dong-Xi Guo Hai-Ming Pang Shi-Jin and Gao Hong-Jun |
| |
| Affiliation: | Nanoscale Physics and Devices Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China |
| |
| Abstract: | We report the formation and local electronic
structure of Ge clusters on the Si(111)-7$\times $7 surface
studied by using variable temperature scanning tunnelling microscopy
(VT-STM) and low-temperature scanning tunnelling spectroscopy (STS).
Atom-resolved STM images reveal that the Ge atoms are prone to
forming clusters with 1.0~nm in diameter for coverage up to 0.12~ML.
Such Ge clusters preferentially nucleate at the centre of the
faulted-half unit cells, leading to the `dark sites'
of Si centre adatoms from the surrounding three unfaulted-half
unit cells in filled-state images.
Bias-dependent STM images show the charge transfer
from the neighbouring Si adatoms to Ge clusters.
Low-temperature STS of the Ge clusters reveals
that there is a band gap on the Ge cluster and the large voltage
threshold is about 0.9~V. |
| |
| Keywords: | scanning tunnelling
microscopy Si(111)-7\times 7
surface Ge cluster |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|
