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Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation 下载免费PDF全文
The hardening of the buried oxide (BOX) layer of separation by implanted
oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation
was investigated by implanting ions into the BOX layers. The tolerance to
total-dose irradiation of the BOX layers was characterized by the
comparison of the transfer
characteristics of SOI NMOS transistors before and after irradiation to
a total dose of 2.7
Mrad(SiO2. The experimental results show that the implantation of
silicon ions into the BOX layer can improve the tolerance of the BOX layers
to total-dose irradiation. The investigation of the mechanism of the
improvement suggests that the deep electron traps introduced by silicon
implantation play an important role in the remarkable improvement in
radiation hardness of SIMOX SOI wafers. 相似文献
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研究了埋氧层中注氮后对制作出的部分耗尽SOInMOSFET的特性产生的影响.实验发现,与不注氮的SIMOX基片相比,由注氮SIMON基片制作的nMOSFET的电子迁移率降低了.且由最低注入剂量的SIMON基片制作的器件具有最低的迁移率.随注入剂量的增加,迁移率略有上升,并趋于饱和.分析认为,电子迁移率的降低是由于Si/SiO2界面的不平整造成的.实验还发现,随氮注入剂量的提高,nMOSFET的阈值电压往负向漂移.但是,对应最低注入剂量的器件阈值电压却大于用SIMOX基片制作出的器件.固定氧化物正电荷及界面陷阱密度的大小和分布的变化可能是导致阈值电压变化的主要因素.另外发现,用注氮基片制作出的部分耗尽SOInMOSFET的kink效应明显弱于用不注氮的SIMOX基片制作的器件.
关键词:
SOI
nMOSFET
氮注入
电子迁移率
阈值电压 相似文献
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为研究注氮改性对注氧隔离硅材料中埋氧层性质的影响,向其埋氧层内注入了1016 cm-2的高剂量氮.实验结果表明,与未注氮的埋氧层相比,所有注氮的埋氧层中的正电荷密度显著增加.实验还发现,注氮后的退火可使埋氧层内的正电荷密度进一步上升.但与注氮导致的埋氧层内正电荷密度的显著上升相比,退火时间对注氮的埋氧层内正电荷密度的影响不大.电容-电压测量结果显示,在埋氧层内部,注氮后未退火的样品与在1100 ℃的氮气气氛下退火2.5 h的样品相比,二者具有近似相同的等效正电荷
关键词:
注氧隔离
埋氧
注氮
正电荷密度 相似文献
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研究了埋氧注氮对部分耗尽SOI PMOSFET顶栅氧的总剂量辐射硬度所造成的影响。注入埋氧的氮剂量分别是8×1015 , 2×1016 和1×1017cm-2。实验结果表明,辐照前,晶体管的阈值电压随氮注入剂量的增加向负方向漂移。在正2V的栅偏压下,经5×105 rad(Si)的总剂量辐照后,同埋氧未注氮的晶体管相比,埋氧注氮剂量为8×1015 cm-2的晶体管呈现出了较小的阈值电压漂移量。然而,当注氮剂量高达2×1016 和 1×1017cm-2时,所测大多数晶体管的顶栅氧却由于5×105 rad(Si)的总剂量辐照而受到了严重损伤。另外,对于顶栅氧严重受损的晶体管,其体-漏结也受到了损伤。所有的实验结果可通过氮注入过程中对顶硅的晶格损伤来解释。 相似文献
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Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 下载免费PDF全文
In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 1016 cm-2 , and subsequent annealing was performed at 1100°C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained. 相似文献
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