Pseudo-Spin-Valve Trilayer Using Amorphous CoNbZr Layer： Giant Magnetoresistance, Domain Structures and Potentials for Spin-Electronic Devices

We propose a pseudo-spin-valve (PSV) trilayer using amorphous CoNbZr Mloy for soft magnetic layers. The giant magnetoresistance (GMR), domain structures and their variation upon thermal annealing are investigated. The GMR effect is not only stable up to 300℃ but also enhanced due to the improvement of the interfaces between Cu and magnetic layers. With high annealing temperature, the magnetoresistance (MR) ratio decreases rapidly as a result of serious layer interdiffusion. Dense stripe domains, which disappear after annealing at 300℃ for 1h, are observed in the sandwiched films. It is found that after patterning to elliptic stripe with aspect ratio of 6:1, the trilayers have a single domain and their MR ratio increases. The dynamic MR behaviour under an ac magnetic field indicates that the patterned stripes have good linear MR responses. Therefore, it is believed that the CoNbZr/Cu/Co PSV trilayers have strong potentials for spin-electronic devices including magnetic random access memory.     

聚苯胺/钡铁氧体复合材料的制备及电磁性能

"采用原位掺杂聚合法,将聚苯胺对粒径在60~80 nm的M型钡铁氧体颗粒(BaFe12O19)进行包覆,得到了具有导电性和磁性的复合材料．通过X射线衍射、傅利叶变换红外光谱仪、扫描电镜和透射电镜等测试手段对材料的形貌和结构进行了表征．结果表明：PANI链段与BaFe12O19颗粒之间存在着作用力．使用振动磁强计和四探针法测定了复合材料的磁性能与电性能,其中50%复合材料的饱和磁化强度为22.2 emu/g,电导率为0.069 S/cm．"     

Effect of Sputtering Parameters on Film Composition,Crystal Structure,and Coercivity of SmCo Based Films Deposited on Si （100） Substrates

The sputtering parameter mediated composition （SPMC） effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation （Sm2Co17→SmCo7→SmCo5） and the enhanced coercivity.     

Room-Temperature Ferromagnetism of Co-Doped CeO2 Thin Films on Si（111） substrates

Using Co2O3 as the Co source, doped cerium oxide thin films with the composition of Ce0.97C00.03O2-δ （CCO） are deposited on Si（111） and glass substrates by pulse laser deposition technique. X-ray diffraction reveals that CCO films with （111） preferential orientation are grown on Si, while the fihn on glass is polycrystalline with nanocrystal. X-ray photoelectron spectroscopy shows that the （Jo displaces the （;e atom and exists in high spin state rather than low spin state, which contributes to the room-temperature ferromagnetism confirmed by vibration sample magnetometer. I~ilms on Si and glass are different in ferromagnetism, which is believed to be induced by different film microstructures. Based on these results, the possible ferromagnetism in this insulating film is discussed. Anyway, successful fabrication of CCO films with room-temperature ferromagnetism on Si substrates is of great importance in both technological and theoretical aspects.     

非均匀晶化Bi和Ba代替DyIG膜的法拉第效应研究

报道了快速循环晶化Ｂｉ和Ｂａ代替ＤｙＩＧ磁光膜的实验结果，发现在累加退火时间小于３分钟时（温度６５０～６８０℃）膜内部存在非晶区域和沿厚度晶化不均匀现象。导出晶相与非晶相界面法拉第角计算公式。计算结果表明，界面效应导致膜整体法拉第效应减弱。     

Coupled THz Waveguide Utilizing Surface Plasmon Polaritons on Thin Dielectric Slab Sandwiched between Two Corrugated Metallic Claddings

We present a comprehensive experimental study of terahertz （THz） wave propagation utilizing surface plasmon polaritons （SPPs） on the interfaces of a thin dielectric core layer sandwiched between two corrugated metallic claddings. THz wave impinges on the structured surfaces at normal incidence. Long-lasting oscillation propagation features are observed in the temporal waveform after traveling through the periodic arrays. The enhanced THz transmission can be achieved due to the coupling between incident waves to SPPs at the bottom and top interfaces. The finite element method is used to simulate the field distribution and the transmission mode in the waveguide. The hybrid waveguide with low absorption has great potential applications in THz integrated devices.     

Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers

We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low （high） when the magnetic moments of the two spin filters are parallel （antiparallel）. We present a theoretical calculation of the magnetoresistance based on electric tunnel effect. In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.     

An Artificially Garnet Crystal Materials Using In Terahertz Waveguide

A hypothesis is brought forward that the materials with low propagation loss in both optical and microwave band may exhibit good performance in terahertz （THz） band because THz wave band interspaces those two wave bands. For the purpose-of exploring a kind of low-loss material for THz waveguide, Lu2.1Bi0.9Fe5O12（LuBiIG） garnet films are prepared by liquid phase epitaxy （LPE） method on a gadolinium gallium garnet （GGG） substrate from lead-free flux because of the good properties in both optical and microwave bands. In microwave band, the ferromagnetic resonance （FMR） linewidth of the film 2△H = 2.8-5.1Oe; in optical band, the optical absorption coefficient is 600cm^-1 at visible range and about 100-170cm^-1 when the wavelength is longer than 800nm. In THz range, our hypothesis is well confirmed by a THz-TDS measurement which shows that the absorbance of the film for THz wave is 0.05-0.3 cm 1 and the minimum value appears at 2.3 THz. This artificial ferromagnetic material holds a great promise for magnetic field tunable THz devices such as waveguide, modulator or switch.     

聚苯胺钡铁氧体纳米复合材料的制备、表征及性能

采用原位掺杂聚合法, 将聚苯胺(PANI)对粒径在60~80 nm的M型钡铁氧体颗粒(BaFe12O19)进行了包覆, 得到了具有棒状结构的复合材料. 通过X射线衍射(XRD)、傅里叶变换红外光谱(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)等测试手段对材料的形貌和结构进行了表征. 结果表明, PANI链段与BaFe12O19颗粒之间存在作用力. 使用振动磁强计和四探针法测定了复合材料的磁性能与电性能后发现, 饱和磁化强度与矫顽力均随聚苯胺含量的增加呈规律性下降趋势, 而电导率呈上升趋势. 复合材料的吸收特性测试结果表明, 该材料反射率小于-20 dB时, 带宽可以达到15.07 GHz. 同时详细地讨论了纳米复合材料的聚合机理及相互作用.     

Crystal Structure and Magnetic Properties of Sm2 Fe17-Nδ Thin Films Deposited on Si （100） Substrates

This work focuses on the crystal structure and magnetic properties of the hard magnetic Sm2 Fe17 Nδ films prepared by dc magnetron sputtering and the subsequent nitriding process. The XRD, EDS, M-H and M-T data show that N enters the cell structure and the films with the single Th2Zn17 phase are obtained when the nitriding temperature varies from 300 to 400℃, thus the maximum value of the coercivity Hc reaches 2561.7Oe. However, the Sm2Fo17 phase decomposes to the StuN nonmagnetic phase and the α-Fe soft magnetic phase with further increasing nitriding temperature, which corresponds to the decreasing Hc. Furthermore, the easy magnetization direction （EMD） is found to locate randomly in the film plane. This texture can not give an excellent MR/Ms higher than the Stoner-Wohlfarth limitation （MR/Ms = 0.5）, which agrees well with the observed low MR/Ms （0.58）. It is suggested that the magnetization reversal process is dominated by the nucleation mechanism according to the initial magnetization curve and the dependence of Hc on the field H.