Optimization and Finite Element Analysis of the Temperature Field in a Nitride MOCVD Reactor by Induction Heating

A susceptor structure with a ring channel for a vertical metalorganic chemical vapor deposition reactor by induction heating is proposed. Thus the directions of heat conduction are changed by the channel, and the channel makes the heat in the susceptor redistribute. The pattern of heat transfer in this susceptor is also analyzed. In addition, the location and size of the channel in the susceptor are optimized using the finite element method. A comparison between the optimized and the conventional susceptor shows that the optimized susceptor not only enhances the heating efficiency but also the uniformity of temperature distribution in the wafer, which contributes to improving the quality of the film growth.     

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device.For NbAlO MIS-HEMT,smaller current collapse is found,especially when the gate static voltage is 8 V.Through a thorough study of the gate-drain conductance dispersion,it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface.Therefore,fewer traps can be filled by gate electrons,and hence the depletion effect in the channel is suppressed effectively.It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively,and weaken the current collapse effect accordingly.     

立式MOCVD反应室中一种刻槽基座的热分析

在立式感应加热的氮化物MOCVD反应室中, 提出了一种刻槽结构的基座;利用有限元法,给出了使衬底温度分布最均匀的槽的位置和大小.与传统的基座相比,这种刻槽优化后的基座,使衬底温度分布的均匀性显著提高.另外,通过对基座温度随加热时间变化的分析,发现刻槽基座的热传导规律,即刻的槽改变了基座中感应产生热量的热传导方向,衬底中的热量是由槽上下基座部分传递而来的,且随时间的增大,基座的温度趋于恒定,衬底的温度趋于均匀,均匀的衬底温度有利于提高生长薄膜的质量.