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Light Irradiation through Small Particles and Its Applications for Surface Nanostructuring in Near Field 下载免费PDF全文
We investigate the light scattering through small particles and its applications in nanostructuring, such as nanobumping, nanopatterning and dry laser cleaning. The theoretical calculation based on Mie theory provides an exact solution for sphere cavity resonance and plasmon resonance, which are two mechanisms for dielectric and metallic particles assisted surface nanostructuring in near field. The experimental results indicate that nanobumps on glass surface and subwavelength holes array on silicon surface can be formed without cracks with the self-assembly of 1 μm silica particle mask under laser irradiation. It is also found that the scattering wave by 40 nm gold particles can propagate 200 times away in terms of particle radius as recorded by photoresist under the UV light irradiation. Meanwhile, dry laser cleaning of 40nm gold particle on silicon wafer is demonstrated at plasmonic resonance frequency. The total cleaning efficiency is estimated to be 80%. 相似文献
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The $1/f$ noise in multiwalled carbon nanotubes bundles has been investigated between the frequency range of 0.1 to 30 Hz. At room temperature the noise spectrum is standard 1/f, and its level is proportional to the square of the bias voltage. With decreasing temperature the noise level also decreases. At 4.2 K the noise level follows a non-monotonic dependence against the bias voltage, showing a peak at a certain bias voltage, meanwhile its frequency dependence also deviates from the 1/f trend. This anomalous behaviour is discussed within the picture of environmental quantum fluctuation of charge transport in the samples. 相似文献
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拓扑绝缘体的出现为寻找拓扑超导体和Majorana费米子提供了一种可能的途径. 在拓扑绝缘体Bi2Te3表面沉积极薄的不连续铅膜, 试图通过邻近效应感应出大片的超导区, 为下一步研究拓扑超导电性创造条件.借助四引线电输运测量实验, 在0.25 K的低温下看到了超流现象, 表明沉积在Bi2Te3表面的厚度小于20 nm的颗粒化铅膜能够诱导邻近效应, 并且使大片Bi2Te3超导.
关键词:
超导邻近效应
S-N-S结
拓扑绝缘体 相似文献
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对使用金属有机物汽相沉积法生长的AlGaN/AlN/GaN结构进行的变温霍尔测量,测量结果指出在AlN/GaN界面处有二维电子气存在且迁移率和浓度在2K时分别达到了1.4×104cm2·V-1·s-1和9.3×1012cm-2,且在200K到2K范围内二维电子气的浓度基本不变,变磁场霍尔测量发现只有一种载流子(电子)参与导电.在2K温度下,观察到量子霍尔效应,Shubnikov-de Haas (SdH) 振荡在磁场约为3T时出现,证明了此结构呈现了典型的二维电子气行为.通过实验数据对二维电子气散射过程的半定量分析,推出量子散射时间为0.23ps,比以往报道的AlGaN/GaN结构中的散射时间长,说明引入AlN层可以有效减小合金散射,进一步的推断分析发现低温下以小角度散射占主导地位. 相似文献
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Observation of Weak Anti-Localization and Electron-Electron Interaction on Few-Layer 1T′-MoTe_2 Thin Films 下载免费PDF全文
Electronic transports of few-layer 1T'-MoTe_2 films are measured at temperatures down to 0.26 K. The lowtemperature conductivity exhibits logarithmic temperature dependence and negative magneto response. The negative magnetoconductivity can be well fitted by the two-dimensional weak anti-localization theory taking a single channel of electrons into account, with the parameters α≈-0.5 and l_φ∝ T~(-0 5). The logarithmic temperature dependence has a positive slope κ≈0.75, indicating the dominance of electron-electron interaction over the weak anti-localization effect, with an apparently negative Coulomb screening factor F that demands future work for clarification. 相似文献
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Bi2O2Se是一种新型半导体材料,具有载流子迁移率高、空气中稳定和自旋轨道耦合强等优点,并且其合成方法多种多样,应用范围十分广泛.但已有研究大多集中在其二维薄膜,本文介绍一种使用三温区管式炉通过化学气相沉积生长Bi2O2Se一维纳米线的方法,研究了云母衬底处于水平方向不同位置以及竖直方向不同高度对Bi2O2Se纳米线生长的影响,并归纳出适于其生长的优化条件.之后,基于生长的Bi2O2Se纳米线构建了超导量子干涉器件,并观测到随磁场的超导量子干涉,为拓宽Bi2O2Se纳米线的应用提供了思路. 相似文献
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Transport Studies on GaAs/AlGaAs Two-Dimensional Electron Systems Modulated by Triangular Array of Antidots 下载免费PDF全文
Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems(2DESs),and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρ_(xx),and remarkable similarity between dρ_(xy)/dB and ρ_(xx) is found. In samples of relatively large aspect ratio d/a, the Aharonov-Bohm-type oscillations are clearly observed in both ρ_(xx) and ρ_(xy), as well as the quenching of the Hall resistivity ρ_(xy) in the vicinity of B = 0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs. 相似文献
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