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A metal-graphene hybrid metasurface polarization converter is designed in this Letter.The unit cell of the hybrid metasurface is composed of a butterfly-shaped structure whose branches are connected by multi-layer graphene sheets.The proposed device can be reconfigured from linear-to-circular polarization to cross-polarization by changing the Fermi energy of graphene.The simulation results show that for three-layer graphene,the device acts as a linear-to-circular polarization converter when EF=0 eV and switches to a cross-polarization converter when EF=0.5 eV.Compared with single-layer graphene,the device with three-layer graphene can maintain the cross-polarization conversion performance under low Fermi energy.Furthermore,two equivalent circuits in the x and y directions are developed to understand the working mechanism of the device. 相似文献
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Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs 下载免费PDF全文
Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device. 相似文献
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提出了一种由左右、上下对称的一大一小圆弧组成的金属圆弧孔阵列结构。利用该结构形成的法布里-珀罗腔来加强表面等离激元的耦合作用,以获得较好的强透射现象;同时研究了基于该现象的折射率传感特性。采用有限时域差分法研究了该孔阵列结构中大小圆弧孔的半径、两圆弧的圆心距和阵列周期对强透射现象的影响。研究发现,当大圆弧半径为95nm、小圆弧半径为70nm、两圆弧的圆心距为100nm、周期为425nm时,该结构具有较好的强透射现象,其灵敏度为279nm/RIU,为下一代高性能微纳米等离子体传感器的设计提供了理论参考。 相似文献
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提出一种金属-介质-金属非对称圆形结构,该结构由两个圆形谐振腔、一个传输波导和两个耦合波导组成。利用谐振腔的局域作用加强表面等离激元的耦合作用,获得较大的透射率。采用有限时域差分方法研究了圆形谐振腔半径、个数和两圆腔中心距离对强透射特性的影响。结果表明,当非对称圆形谐振腔的半径为100nm、两圆间距为200nm时,该结构具有较高的透射率。通过优化主要参数,所设计结构的平均阻带宽度为1000nm,工作范围可增大到2500nm。 相似文献
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Broadband asymmetric transmission for linearly and circularly polarization based on sand-clock structured metamaterial 下载免费PDF全文
We proposed a sandwich structure to realize broadband asymmetric transmission(AT) for both linearly and circularly polarized waves in the near infrared spectral region. The structure composes of a silica substrate and two sand-clock-like gold layers on the opposite sides of the substrate. Due to the surface plasmons of gold, the structure shows that the AT parameters of linearly and circularly polarized waves can reach 0.436 and 0.403, respectively. Meanwhile, a broadband property is presented for the AT parameter is over 0.3 between 320 THz and 340 THz. The structure realizes a diode-like AT for linearly wave in forward and circularly wave in backward, respectively. The magnetic dipoles excited by current in the two gold layers contribute to the broadband AT. The current density in top and bottom metallic layers illustrates the mechanism of the polarization conversion for broadband AT in detail. 相似文献
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等离子体填充能够明显提高真空电子器件的效率和功率, 研究等离子体填充器件具有重要的科学价值. 本文基于对等离子体填充金属光子晶体慢波结构色散特性的分析, 利用粒子模拟方法展示了等离子体填充慢波结构中的注波互作用过程. 重点研究了慢波结构中场分布特性、等离子体密度和外部工作条件对频率及输出功率的影响. 研究发现, 填充一定密度等离子体后, 慢波结构内纵向和横向电场强度明显增大, 注波互作用增强, 输出频率受等离子体影响不大. 金属光子晶体结构具有的频率选择特性使器件工作于TM01模态. 阴极电压增加使输出功率增大, 频率略有增加. 引导磁场增加使输出功率先增大后减小, 而频率基本不受影响. 等离子体填充后器件的输出功率上升, 当增加压强至100 mTorr(1 mTorr=0.133 Pa) 时, 输出功率提高约20%, 但只有适当密度下才有较好的角向场分布. 通过理论与模拟相结合, 发现填充一定密度的等离子体能够提高器件输出功率和效率, 为发展新型高功率毫米波振荡辐射源奠定了理论和仿真基础. 相似文献