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1.
介绍了光码分多址系统中常用地址码(一维扩时码、二维码和三维码)的特点,并对它们各自的互相关均值和方差进行了理论分析。基于非相干光码分多址系统中光学相关接收机的基本原理,结合不同的用户地址码,对系统误码率性能进行了分析,得到了接收机最佳判决阈值与地址码基本特性参数和系统同时用户数间的关系。最后,给出了数值仿真结果。结果表明,对于采用特定地址码的光码分多址系统,只有选择合适的接收机判决阈值,系统的误码率性能才能达到最佳。研究结果对光码分多址系统中接收机判决阈值的选取具有一定的参考作用。 相似文献
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Let H and K be indefinite inner product spaces. This paper shows that a bijective map φ:B(H)→B(K) satisfies φ(AB B A) =φ(A)φ(5) φ(B) φ(A) for every pair A,B ∈B(H) if and only if either φ(A) = cU AU for all A or φ(A) = cUA U for all A; φsatisfies φ(AB A) = φ(A)φ(B) φ(A) for every pair A,B ∈B(H) if and only if either φ(A) = UAV for all A or φ(A) = UA V for all A, where A denotes the indefinite conjugate of A, U and V are bounded invertible linear or conjugate linear operators with U U = c-1I and V V = cI for some nonzero real number c. 相似文献
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Gopalakrishna K. Bhat 《Optics and Lasers in Engineering》1997,26(1):43-58
An electro-optic holographic technique (also called electronic speckle pattern interferometry or TV holography) for the measurement of displacements and strains on three-dimensional object surfaces is presented. The three components of the displacement vector, in a fixed coordinate system, are separated using four independent illumination beams. The interferometric phase for each illumination beam is extracted using the phase stepping technique. Displacements in the fixed coordinate system are projected on to the object surface using the tensor transformation law. Equations for the computation of surface strains using the projected displacements and the surface geometry are developed. The technique is applied for the measurement of strains on the surface of a cylindrical vessel subjected to internal pressure. 相似文献
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Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films 下载免费PDF全文
Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition'parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of (002) crystal planes of the He-charged Ti film shifts to a lower angle and that of (100) crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening. 相似文献
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It is well known that potassium ion channels have higher permeability than K ions, and the permeable rate of a single K ion channel is about 108 ions per second. We develop a hierarchical model of potassium ion channel permeation involving ab initio quantum calculations and Brownian dynamics simulations, which can consistently explain a range of channel dynamics. The results show that the average velocity of K ions, the mean permeable time of K ions and the permeable rate of single channel are about 0.92nm/ns, 4.35ns and 2.30 ×10^8 ions/s, respectively. 相似文献
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用A的不变子空间作参数,给出了算子方程AX=XAX的全部解。当A是单射或稠值域时,或者当A是正规算子时,给出了算子方程AX=XA=XAX的全部解。我们还给出正规算子X是算子方程AX=XZ=XAX的解的充分必要条件。 相似文献
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E. Kapon M. Walther J. Christen M. Grundmann C. Caneau D.M. Hwang E. Colas R. Bhat G.H. Song D. Bimberg 《Superlattices and Microstructures》1992,12(4)
Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than KBT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated. 相似文献