聚(3-烷基噻吩)的合成与应用研究进展

详述了聚(3-烷基噻吩)的化学合成方法、电化学合成方法及近期新兴的微波辐射辅助合成法;并总结了聚(3-烷基噻吩)在光伏电池材料、电致发光材料和热电材料等领域的应用研究及现状.     

Training Effect and Hysteretic Behaviour of Angular Dependence of Exchange Bias in Co/IrMn Bilayers

The training effect and the hysteresis behaviour of the angular dependence of exchange bias are extensively investigated upon the variation of the IrMn layer thickness tXrMn in a series of Co/IrMn bilayers. When tIrMn is very small, both of them are negligible. Then they increase very sharply with increasing tUMn and then reach maxima at almost the same value OftXrMn. Finally they both decrease when tIrMn is further increased. The similar variation trends suggest that these phenomena arise from irreversible change of antiferromagnet spin orientations, according to the thermal activation model.     

MgO相分离对MgxZn1-xO纳米粉体结构和光学性能的影响

采用溶胶-凝胶法制备了MgxZn1-xO(x=0,0.1,0.2,0.3,0.4,0.5)纳米粉体。X射线衍射谱表明:在较高的温度(850℃以上)下退火,MgxZn1-xO纳米粉体从单一的纤锌矿结构相中分离出MgO相的掺杂浓度x约为0.13,且随着x的增加,MgO相含量呈指数型增长。室温光致发光谱显示:MgO相分离对紫外与绿光发射的相对强度有直接的影响,随着MgO相分离的出现,紫外发光峰蓝移,并随着MgO相的增加,紫外发光峰的强度受抑,绿光发光峰变强。样品的室温透过率显示:MgxZn1-xO的禁带宽度在x=0.1时达到最大值并受MgO相分离的影响而减小。     

K3C60晶体中的电子屏蔽效应

用屏蔽的静电库仑相互作用势,引入各离子的屏蔽参数,并考虑离子间的短程相互作用,计算了K3C60晶体中各离子和原胞的结合能随屏蔽参数的变化.分析计算表明K3C60晶体中电子的屏蔽主要是指对钾离子势能的屏蔽,特别是对四面体空隙中的钾离子K+T,虽然屏蔽参数很小,但对晶体结构的稳定极为重要 关键词：     

K3C60晶体中的电子屏蔽效应

用屏蔽的静电库仑相互作用势,引入各离子的屏蔽参数,并考虑离子间的短程相互作用,计算了K3C60晶体中各离子和原胞的结合能随屏蔽参数的变化.分析计算表明K3C60晶体中电子的屏蔽主要是指对钾离子势能的屏蔽,特别是对四面体空隙中的钾离子K+T,虽然屏蔽参数很小,但对晶体结构的稳定极为重要.     

基于学研结合大学物理教学平台的创新性理科人才培养

积极探索创新性理科人才培养模式,培养和造就大批基础扎实、专业面向宽、实践能力与创新精神突出的高素质人才是新时期经济社会发展对高等教育发展的迫切要求,也是高等学校人才培养模式改革的重要方向。本文主要从如何有效地通过开展教学改革,着力提高教学质量,培养创新人才等方面介绍西北工大学大学物理教学团队与体系、教材与学研结合大学物理教学平台的建设情况,同时介绍依托学研结合大学物理教学平台创新性理科人才培养路径以及取得的初步成效。     

A2BC60和A3C60晶体中的短程相互作用

研究了Ａ３Ｃ６０和Ａ２ＢＣ６０晶体的结构和稳定性。计算了它们的Ｍａｄｅｌｕｎｇ常数、结合能、晶格常数和体积弹性模量,并讨论了晶体中的短程相互作用。结果显示,短程相互作用结构和八面体空隙碱金属的稳定性具有极大的影响。ＣｓＫ２Ｃ６０、ＲｂＫ２Ｃ６０和Ｋ３Ｃ６０的晶格常数计算结果与实验测量值非常符合。     

Formation of L10-FeNi hard magnetic material from FeNi-based amorphous alloys

L1₀-FeNi hard magnetic alloy with coercivity reaching 861 Oe was synthesized through annealing Fe₄₂Ni_41.3Si₈B₄P₄Cu_0.7 amorphous alloy, and the L1₀-FeNi formation mechanism has been studied. It is found the L1₀-FeNi in annealed samples at 400 ℃ mainly originated from the residual amorphous phase during the second stage of crystallization which could take place over 60 ℃ lower than the measured onset temperature of the second stage with a 5 ℃/min heating rate. Annealing at 400 ℃ after fully crystallization still caused a slight increase of coercivity, which was probably contributed by the limited transformation from other high temperature crystalline phases towards L1₀ phase, or the removal of B from L1₀ lattice and improvement of the ordering quality of L1₀ phase due to the reduced temperature from 520 ℃ to 400 ℃. The first stage of crystallization has hardly direct contribution to L1₀-FeNi formation. Ab initio simulations show that the addition of Si or Co in L1₀-FeNi has the effect of enhancing the thermal stability of L1₀ phase without seriously deteriorating its magnetic hardness. The non-monotonic feature of direction dependent coercivity in ribbon segments resulted from the combination of domain wall pinning and demagnetization effects. The approaches of synthesizing L1₀-FeNi magnets by adding Si or Co and decreasing the onset crystallization temperature have been discussed in detail.     

退火气氛和镧掺杂浓度对ZnO薄膜结构和光学性能的影响

采用溶胶-凝胶浸渍提拉法在玻璃衬底上制备Zn1-xLaxO(x=0～0.04)(LZO)薄膜,分别在空气、氮气和氩气条件下进行退火,探讨了不同退火气氛和不同镧掺杂浓度对其结构和光学性能的影响.XRD和SEM结果表明:氩气退火条件下ZnO的晶粒尺寸比空气退火条件下和氮气退火条件下的晶粒尺寸略小,且ZnO晶粒的尺寸随着镧掺杂浓度的增加而减小.薄膜光致发光(PL)测量表明:紫光发光带中心在氩气下退火相对于空气下退火存在略微的蓝移,而在氮气下退火则相反;ZnO紫光发光带的位置随着镧掺杂浓度的增加先红移而后蓝移.禁带宽度在镧掺杂量为2;时达到最小值,说明镧可以有效地调节ZnO的禁带宽度.