Structure,Chemical State and Luminescent Properties of Ce,Gd:YAG Transparent Ceramic for Flip-chip White LED Application

Ce,Gd:YAG transparent ceramic was prepared by tape casting and solid state reaction method. Meanwhile, its crystal structure, chemical state and luminous properties were discussed. The prepared samples are identified as pure garnet structure by the XRD results. The valence states of tetravalent and trivalent Ce ions were identified distinctly by X-ray photoelectron spectroscopy. A strong broad band yellow emission was found in photoluminescence(PL) spectra. The quantum yield reached 90.2% at room temperature. When collaborated with a 1.0 mm × 1.0 mm flip-chip, a luminous efficiency(LE) as high as 116.5 lm/W with a correlated color temperature(CCT) of 6627 K at a power dissipation of 1.13 W at 350 m A was demonstrated, indicating that Ce,Gd:YAG transparent ceramics had a promising potential for high power white light-emitting diodes.     

LED的COB封装热仿真设计

通过对COB封装中常用的陶瓷基板和金属基板这两类不同的基板材料进行有限元热仿真模拟,获得各自芯片到基板的仿真热阻,再使用红外热成像仪得到两种基板各自的表面温度分布情况并计算出实际热阻。仿真热阻与实际热阻的一致性表明了所采用的仿真计算方法的可用性。利用有限元仿真对COB封装的热管理方案进行了优化分析。研究表明:相对于金属基板,陶瓷基板由于无绝缘层这一散热瓶颈,其芯片到基板的热阻值约为金属基板封装方案的1/2;而且陶瓷基板有着更大的热管理优化空间,能更好地满足大功率LED封装的散热需要。     

氩气压强对射频磁控溅射ZnO：Al薄膜结构和性能的影响

以ZnO:Al2O3为靶材在石英玻璃衬底上射频磁控溅射制备多晶ZnO:Al(AZO)薄膜,通过XRD、AFM以及Hall效应、透射光谱等测试研究了RF溅射压强对薄膜结构、电学与光学性能的影响.分析表明:所制备的薄膜具有c轴择优取向,当压强为1.2Pa时薄膜的电阻率降至最低(2.7×10-3Ω·cm).薄膜在可见光区平均透射率高于90%,光学带隙均大于本征ZnO的禁带宽度.