玻璃中CdSeS纳米晶体的室温光致发光谱

对掺有过饱和的镉、硒和少量硫的玻璃在500～800℃分别退火4h,生长了不同尺寸的CdSe_1-xS_x纳米晶体。测量了纳米晶体的室温吸收光谱和光致发光(PL)光谱,550℃生长的样品在300～800nm的范围没有观察到吸收和发光峰,表明温度低于550℃玻璃中不能形成纳米晶体。生长温度在600～650℃,纳米晶体的PL光谱主要为两个宽的发光带,即带边激子发光带和通过表面态复合的发光带。随着生长温度的升高,带边复合发光的蓝移减小,通过表面态的发光逐渐消失,并出现了叠加于宽发光带上的一系列明显的弱发射峰。不同温度生长的样品中,叠加峰的能量相同。同一样品中叠加峰的能量不随激发光波长的变化而变化。     

YZr2OZr3:Er3+纳米晶anti-Stokes发光性质的研究

采用均相沉积法制备了不同Er³⁺离子浓度掺杂的Y₂O₃纳米晶, 应用XRD，SEM和PL光谱对该体系材料进行了表征.在Y₂O₃:Er³⁺纳米材料体系中, 观察和研究了Stokes及anti-Stokes PL谱强度与Er³⁺离子摩尔浓度变化的关系, 当Er³⁺离子浓度为2.0mol%时, anti-Stokes PL强度最强.粉末X 关键词： 氧化钇纳米晶 anti-Stokes PL 双光子吸收     

氢对GaAs薄膜的钝化作用

报导了射频磁控溅射与沉积气氛掺氢相结合制备单层(13~20 nm厚)高质量GaAs多晶态纳米薄膜的方法,研究了氢钝化对薄膜微观结构及光学性质的影响.对GaAs薄膜进行了X射线衍射、原子力显微镜、吸收光谱、光致荧光谱的研究分析.结果表明,衬底温度500℃的掺氢薄膜和520℃的薄膜呈面心立方闪锌矿结构，薄膜的晶团尺寸较大，微观表面较为粗糙，其吸收光谱出现了吸收边蓝移和明显的激子峰，带隙光致荧光峰强明显增加，说明氢在衬底温度500℃~520℃下对薄膜有重要的钝化作用.     

声表面波器件用〈110〉取向ZnO薄膜的MOCVD生长

Zn O是具有纤锌矿晶体结构的多功能半导体材料 ,它具有 3 .3 7e V的禁带宽度和高达 60 me V的激子束缚能 ,是很有希望的紫外发光材料 .由于具有 c轴的择优取向性 ,因此目前人们的注意力主要集中在对 c轴取向 Zn O薄膜的特性研究上 [1～ 3] .但其它取向的 Zn O薄膜也可在某些衬底的特定面上 ,通过特定的条件进行生长 ,如〈1 1 0〉取向的 Zn O薄膜可在特定的条件下生长在蓝宝石 R面衬底上[4～ 7] .由于 (1 1 0 )面的 Zn O薄膜具有一些 c轴取向薄膜所不具备或无法比拟的特性 ,如 :机电耦合系数高达6% (C面薄膜的机电耦合系数却不足 1 % )…     

Characteristic material parameters of CIGS solar cell related with device performance

CIGS solar cells with power conversion efficiency (PCE) in the range of 1.82%–12.30% were obtained by using two-step process, and were further analyzed through various measurement techniques. Material parameters showed diverse values and some trends depending on the device performance. The lower performance device showed small integrated PL intensity, short minority life time, larger defect density and lower activation energy, whereas the higher performance device showed opposite values. We investigated relationship between material parameters and PCE of solar cells, and found that some physical parameters such as integrated PL intensity, minority life time, defect density, and difference between band gap and activation energy (E_g-E_a), which all reflect defect states in bulk and at pn interface, are strongly related with PCE and would be used as a good indicator to evaluate device performance quickly.     

Facile ion-exchange synthesis of Gd-doped K2Ta2O6 photocatalysts with enhanced visible light activity

One of the well-known ways of increasing the visible light absorption capability of semiconducting materials is cation doping. This study aims to use Gd doping to tailor the bandgap energy of K₂Ta₂O₆ (KTO) for photocatalytic degradation of organic pollutants under visible light irradiation. Accordingly, the parent KTO and Gd-doped KTO with different Gd concentrations (K_2-3xGd_xTa₂O₆; x = 0.025, 0.05, 0.075 and 0.1 mol%) were synthesized by hydrothermal and facile ion-exchange methods, respectively. The powder XRD, FT-IR, SEM-EDS, TEM-SAED, N₂ adsorption-desorption, XPS, UV–Vis DRS, PL and ESR techniques were used to investigate the effect of Gd dopant concentration on the structural and photocatalytic properties of KTO. The photocatalytic activity of these samples was investigated for the photocatalytic degradation of methylene blue (MB) dye in an aqueous solution at room temperature under visible light irradiation. The experimental results show that all Gd-doped KTO samples exhibit enhanced photocatalytic activity compared with parent KTO toward MB degradation. In particular, Gd-KTO obtained by doping of 0.075 mol% shows the highest photocatalytic activity among the Gd-doped samples and the degradation efficiency of MB was 79% after 180 min of visible light irradiation, which is approximately 1.5 times as high as that by parent KTO (53%). In addition, trapping experiments and electron spin resonance (ESR) analysis demonstrated that the hydroxyl radicals (^?OH) have played a crucial role in the photocatalytic degradation of MB. The reusability and stability of Gd doped-KTO with a Gd content of 0.075 mol% against MB degradation were examined for five cycles. Based on the present study results, a visible light induced photocatalytic mechanism has been proposed for Gd0075-KTO sample.     

Growth and characterization of InAs quantum dots with low-density and long emission wavelength

The growth parameters affecting the deposition of self-assembled InAs quantum dots （QDs） on GaAs substrate by low-pressure metal-organic chemical vapor deposition （MOCVD） are reported. The low-density InAs QDs （- 5 × 10^8cm^-2） are achieved using high growth temperature and low InAs coverage. Photoluminescence （PL） measurements show the good optical quality of low-density QDs. At room temperature, the ground state peak wavelength of PL spectrum and full-width at half-maximum （FWHM） are 1361 nm and 23 meV （35 nm）, respectively, which are obtained as the GaAs capping layer grown using triethylgallium （TEG） and tertiallybutylarsine （TBA）. The PL spectra exhibit three emission peaks at 1361, 1280, and 1204 nm, which correspond to the ground state, the first excited state, and the second excited state of the ODs, respectively.     

The influence of exciton behavior on luminescent characteristics of organic light-emitting diodes

We used N,N′-bis-(1-naphthyl)-N,N′-1-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB), 4,4′-N,N′-dicarbazole-biphenyl (CBP) and tris(8-hydroxyquinoline) aluminum (Alq₃) to fabricate tri-layer electroluminescent (EL) device (device structure: ITO/NPB/CBP/Alq₃/Al). In photoluminescence (PL) spectra of this device, the emission from NPB shifted to shorter wavelength accompanying with the decrease of its emission intensity and moreover the emission intensity of Alq₃ increased relatively with the increase of reverse bias voltage. The blue-shifted emission and the decrease in emission intensity of NPB were attributed to the polarization and dissociation of NPB excitons under reverse bias voltage. The increase of emission intensity of Alq₃ benefited from the recombination of electrons (produced by the dissociation of NPB exciton) and holes (injected from the Al cathode).     

Photoluminescence properties of SHI induced F2 and F3 color centers in nano-granular LiF thin films

Photoluminescence (PL) properties of swift heavy ions-induced F₂ and F₃⁺ color centers in nano-granular lithium fluoride (LiF) thin film were studied. LiF films were deposited on glass and silica substrates and irradiated with various ion species (Ag, Ni and Au) at different irradiation temperatures. The role of ion species, their fluence and the irradiation temperature on the PL intensity of color centers induced in LiF thin films is discussed.     

Red Electroluminescence and Photoluminescence from Novel Binuclear Europium Complex with Squaric Acid Ligand

Organic electroluminescent devices (OELDs) have attracted much attention for several years because of their potential application in large area, multi-colored flat panel displays1-5. The green organic EL display using Alq3 as emitter was commercialized in 19976. However, red-emitting OELD with excellent properties has not been well developed. In order to realize practical full-color OELDs, it is considered very important to develop red and blue emitting materials with excellent propert…