微通道板及其发展趋势

回顾微通道板发展历史及各阶段的主要技术特征。综述自90年代以来国内外微通道板的研发和生产情况．     

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.     

镧掺杂锡酸钡/多壁碳纳米管改性隔膜的制备及其在锂硫电池中的应用

通过将共沉淀法制备的钙钛矿型氧化物镧掺杂锡酸钡(LBSO)与多壁碳纳米管(MCNT)混合均匀,制成浆料,并利用刮涂法将其涂布在商业隔膜Celgard 2500(PP)表面构筑阻挡层,获得改性隔膜(LBSO/MCNT/PP)。基于该改性隔膜的锂硫电池在0.1C下具有高达1 433 mAh·g^-1的初始放电比容量,1C时300次循环后每圈容量衰减率为0.114%;当电流密度提高到3C时,仍具有764 mAh·g^-1的放电比容量,表现出优良的倍率性能和循环稳定性,这主要是由于该阻挡层能够有效抑制多硫化物的穿梭。     

阻挡层电容对ACu3Ti4O12巨介电性能的影响研究

用固相反应法成功地制备了ACu3Ti4O12(A=Ca,La,Y)系列陶瓷,在50-300K温区内测量了样品的介电性能,分析了交流电导与外场频率、温度的关系.发现在相同组分的CaCu3Ti4O12晶体中相对含量大于等于0.776时,样品的相对介电常数可达104;而A位上价态为3+的化合物La2/3Cu3Ti4O12和Y2/3Cu3Ti4O12相对介电常数仅为103.分析表明,样品中内部阻挡层电容数目的多少直接对ACu3Ti4O12的相对介电常数产生影响.电导与温度及频率的关系是由电子、声子与外场的共同作用决定的.     

透明导电氧化铟锡薄膜的特殊应用

阐述了氧化铟锡（ＩＴＯ）薄膜的气敏特性及其导电扩散阻挡作用，对ＩＴＯ气敏薄膜及扩散阻挡层薄膜的制备过程、测试方法和应用进行了研究讨论。     

在织构Ni衬底上用电子束蒸发沉积YSZ阻挡层

用轧制及再结晶方法制备了高度立方织构的金属Ni(镍）基带。采用电子束蒸发的方法在几个厘米长的Ni基带表面上生长YSZ（钇稳定二氧化锆）阻挡层。X射线衍射分析表明，YSZ层具有纯c轴取向和良好的平面内取向及立方织要。扫描电镜观察表明，YSZ阻挡层连续致密无裂纹。     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

The optical and physical properties of an InGaN light-emitting diode (LED) with a specific design of a staggered AlGaN electron-blocking layer (EBL) are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence (EL) intensity, internal quantum efficiency (IQE), and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements.     

Performance enhancement of an InGaN light-emitting diode with an AIGaN/InGaN superlattice electron-blocking layer

The efficiency enhancement of an InGaN light-emitting diode （LED） with an A1GaN/InGaN superlattice （SL） electron-blocking layer （EBL） is studied numerically, which involves the light-current performance curve, internal quan- tum efficiency electrostatic field band wavefunction, energy band diagram carrier concentration, electron current density, and radiative recombination rate. The simulation results indicate that the LED with an A1GaN/InGaN SL EBL has better optical performance than the LED with a conventional rectangular A1GaN EBL or a normal A1GaN/GaN SL EBL because of the appropriately modified energy band diagram, which is favorable ibr the injection of holes and confinement of elec- trons. Additionally, the efficiency droop of the LED with an AIGaN/InGaN SL EBL is markedly improved by reducing the polarization field in the active region.     

Fe掺杂CaCu3Ti4O12陶瓷的介电性能与弛豫特性研究

采用固相反应法制备了CaCu3Ti4-xFexO12(0≤x≤0.2)陶瓷,通过x射线衍射、扫描电子显微镜、介电频谱和阻抗谱等手段研究了Fe对CaCu3Ti4O12陶瓷的结构和介电性能的影响.研究发现:CaCu3Ti4-xFexO12陶瓷在x取值范围内形成了连续固溶体.随着Fe含量x的增加,晶粒半导性逐渐消失,介电常数减小.当x≤0.04时,在106-108和103-104 Hz频率范围存在介电弛豫行为I和介电弛豫行为Ⅱ,高频介电弛豫行为I与陶瓷内的晶界阻挡层有关,而低频介电弛豫行为Ⅱ与陶瓷表面层发生的界面极化有关.在CaCu3Ti3.99Fe0.01O12陶瓷的高温频谱中,观察到了第三个介电弛豫行为Ⅲ,它与局域电荷的跃迁有关,利用阿列纽斯关系式得到此过程的热激活能0.78 eV.