Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

The relation between and violation of Hardy＇s non-locality Bell inequality

We give an analytic quantitative relation between Hardy＇s non-locality and Bell operator. We find that Hardy＇s non-locality is a sufficient condition for the violation of Bell inequality, the upper bound of Hardy＇s non-locality allowed by information causality just corresponds to Tsirelson bound of Bell inequality and the upper bound of Hardy＇s non- locality allowed by the principle of no-signaling just corresponds to the algebraic maximum of Bell operator. Then we study the CabeUo＇s argument of Hardy＇s non-locality （a generalization of Hardy＇s argument） and find a similar relation between it and violation of Bell inequality. Finally, we give a simple derivation of the bound of Hardy＇s non-locality under the constraint of information causality with the aid of the above derived relation between Hardy＇s non-locality and Bell operator.     

Improved charge trapping flash device with Al2O3/HfSiO stack as blocking layer

In this paper, we investigate an Al₂O₃/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon-type (MONOS) memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al₂O₃/HfO₂ stack as the blocking layer, the sample with the Al₂O₃/HfSiO stack as the blocking layer shows high program/erase (P/E) speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al₂O₃/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.     

A1/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC Schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.     

Recent progress of computational investigation on anode materials in Li ion batteries

Computations have been widely used to explore new Li ion battery materials because of its remarkable advantages. In this review, we summarize the recent progress on computational investigation on anode materials in Li ion batteries. By introducing the computational studies on Li storage capability in carbon nanotubes, graphene, alloys and oxides, we reveal that computations have successfully addressed many fundamental problems and are powerful tools to understand and design new anode materials for Li ion batteries.     

非链式脉冲DF激光器的关键技术（英文）

基于化学反应的非链式脉冲DF激光器是产生3.5～4.1μm波段的有效相干辐射光源,具有存储能量水平高等优点。这些优点使得该激光器倍受中红外领域激光研究者的重视。为了更好地提高非链式脉冲DF激光器的输出性能,研制高能量水平的DF激光器,本文详细介绍了自引发大体积放电技术、混合气体配比技术、循环冷却技术等DF激光器关键技术,重点介绍了自引发大体积放电技术。这几种技术将为研制高性能DF激光器提供理论指导。     

非链式化学HF（DF）激光器工作气体中电子分离的非稳定性和气体放电等离子体的自组织现象

报道了放电引发的非链式HF（DF）激光器中的激活介质由电子碰撞负离子分离引起的电离非稳定性。这种非稳性出现在电极空间分离、脉冲CO2激光加热的基于sF6的混合气体的大体积放电中。实验研究了自引发体放电过程中由激光加热引起的放电等离子体的自组织现象以及由此在放电间隙的大部分区域形成的准周期等离子体结构。重点分析了等离子体结构随气体温度和注入能量的变化,讨论了等离子体自组织对电子碰撞分离不稳定性所产生的影响,解释了混合气体中由于电子碰撞使负离子消失导致的单等离子体通道移动的产生机理。     

Performance of third-order ghost imaging with second-order intensity correlation

The third-order ghost imaging with the second-order intensity correlation is theoretically and experimentally demonstrated.The resolution and visibility of the reconstructed image are discussed,and the relationship between resolution and visibility is analyzed.The theoretical results show that a tradeoff exists between the visibility and resolution of the reconstructed image;the better the image resolution,the worse the image visibility.Numerical simulations are carried out to verify this theory,and a ghost...     

壁面湍流流动中高分子减阻等效粘度模型的验证

近来在壁面湍流高分子减阻研究中,一种拉伸的高分子产生自相一致的等效粘度的理论提了出来,这个等效粘度随离开壁面的距离而增长。本文将此线性分布等效粘度置入Navier-Stokes方程,运用雷诺应力模型计算在壁面湍流中的减阻情况,检验这种等效粘度的可行性。可以发现,此模型可以得到湍流减阻的效果,所得到的减阻率随着等效粘度线...     

飞艇外型设计中曲线参数化方法的比较

采用合适的参数化方法快速准确地描述优化前后的几何结构是形状和气动性能优化问题的前提.目前常用的曲线参数化基本方法有三种:Bezier,B-spline和NURBS曲线.参数化曲线拟合的关键是从已知形状反求控制点的信息,本文综合对比了三种不同参数化方法关于飞艇外形拟合性能的差异.结果表明,与其它两种曲线参数化方法相比,N...