高压液封直拉法生长GaP单晶

利用国产ZFL 018型高压单晶炉和液封直拉(LEC)法生长了掺碲(硫)GaP单晶,其常温电学参数为;nTe,s～(2～15)×1017cm-3;μn～(86～134)cm2/sv;位错密度(1～4)×104cm-2。     

恒温器径向温度不均匀性对低温温度计精密校验影响的估计

在分析低温温度计的校验误差时,需要估计温度不均匀性的影响.本文提出一个估计这种影响的方法.若使用同一型号的两支电阻温度计进行测试,则径向温度理想均匀的必要条件是两温度计的电阻比不因温度起伏而变化,充分条件是两温度计所处部位之间无同步温差.分析测试数据对这两个条件的偏离,就可以估计出温度不均匀性的影响.文中给出方法应用实例,并对实验条件进行讨论.     

带STC控制系统的RF-IF放大器组件的研制

介绍了带STC控制系统的RF-IF放大器组件的研制工作。该组件包含有多个功能单元,有低噪声放大器、镜像抑制混频器、前置中频放大器、STC控制电路、PIN电调衰减器等。介绍了组件整体和各功能单元的设计思路和设计结果。     

压气机抽气级静叶吸力面抽气方式的研究

本文提出了将压气机系统性抽气与改善流道内部边界层流动相结合的方法,以提高压气机抽气级的性能.以某多级轴流压气机为例,采用数值模拟的方式讨论了压气机静叶吸力面抽气的可行性.通过不同抽气流量下3个算例计算结果的比较分析,证明了通过静叶吸力面抽气改善叶片性能和流动状况是可行的.     

庞加莱于物理学的贡献

 两位华人数学家曹怀东、朱熹平最终破解了“庞加莱猜想”的报道，重新唤起了公众对“数学全才”庞加莱的关注。庞加莱的研究和贡献涉及数学的各个分支，例如函数论、代数拓扑学、阿贝尔函数和代数几何学、数论、代数学、微分方程、非欧几何、渐近级数、概率论等，当代数学不少研究课题都溯源于他的工作。孰不知，除了是一名数学家之外，庞加莱也是一位影响深远的物理学家，他的研究涉及到天文学、光理论、电磁理论、相对论等物理学分支。     

Efficient quantum secure communication with a publicly known key

This paper presents a simple way for an eavesdropper to eavesdrop freely the secret message in the experimental realization of quantum communication protocol proposed by Beige et al （2002 Acta Phys. Pol. A 101 357）. Moreover, it introduces an efficient quantum secure communication protocol based on a publicly known key with decoy photons and two biased bases by modifying the original protocol. The total efficiency of this new protocol is double that of the original one. With a low noise quantum channel, this protocol can be used for transmitting a secret message. At present, this protocol is good for generating a private key efficiently,     

Studies of diamond-like carbon （DLC） films deposited on stainless steel substrate with Si/SiC intermediate layers

In this work, diamond-like carbon （DLC） films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition （MW-ECRPECVD） techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy （AFM）. With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio ID/IG increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp^3-bond carbon density reducing, resulted in the peak values of hardness （H） and elastic modulus （E）. Silicon addition promoted the formation of sp^3 bonding and reduced the hardness. The incorporated Si atoms substituted sp^2- bond carbon atoms in ring structures, which promoted the formation of sp^3-bond. The structural transition from C-C to C-Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.     

毛细管抑制浮子波动

用流动法测定合成氨反应平衡常数,在用稀硫酸吸收NH_3气时,随着出气管口气泡的产生和破裂,氮气和氢气转子流量计的浮子会发生很大的上下波动。如果出气管口在稀硫酸中插得稍微深一点,氮气转子流量计的浮子甚至会沉到底部去,出气量便明显地减少。这样就容易给实验带来较大的误差。     

误差项有条件异差阵的多元自回归模型的参数估计

线性时间序列模型至今已有广泛的研究，但这些模型习惯上都设预测方差是一个     

Lipschitz曲线上Besov-Triebel-Lizorkin空间的嵌入定理

本文用离散的Calderón型再生公式。证明了Lipschitz曲线上Beasov空间与Triebel-Lizorkin空间的嵌入定理。