Optical Stabilizer Based on Optical Bistable Devices with All-Fibre Construction

We propose a fibre optical stabilizer constituted by a photoelectric-hybrid optical bistable device in which fibre Bragg grating is used as a light intensity modulator. The intensity noise-reducing ability is well improved through the method by employing two feed signals. As a result, the light intensity variation can be reduced to - 1/64.     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

+3价离子掺杂钨酸铅晶体发光性能和微观缺陷的研究

通过透射光谱、x射线激发发射光谱（XSL）的测试，研究了Bridgman法生长的几种不同+3价离子掺杂钨酸铅晶体的发光性能，并利用正电子湮没寿命谱（PAT）和x光电子能谱（XPS）的实验手段，对不同钨酸铅晶体的微观缺陷进行研究.实验表明，不同的+3价离子掺杂，对钨酸铅晶体发光性能的改善不同，并使得晶体中正电子俘获中心和低价氧的浓度发生不同变化.其中掺镧晶体的正电子俘获中心和低价氧浓度均上升，而掺钇和掺铋晶体的正电子俘获中心和低价氧浓度均下降，掺锑晶体则出现了正电子俘获中心浓度上升、低价氧浓度下降的情况.提 关键词： 钨酸铅晶体 +3价离子掺杂 正电子湮没寿命谱 x光电子能谱     

超高精细度光学腔中低损耗的测量

关键词：     

Experimental Study of Capillary Effect in Porous Silicon Using Micro-Raman Spectroscopy and X-Ray Diffraction

We investigate the capillary effect and the residual stress evolution in the wetting, drying and rewetting stages of porous silicon using x-ray diffraction and micro-Raman spectroscopy. A reversible capillary effect and an irreversible oxidation effect are the driving forces for the residual stress evolution. The lattice expansion of the porous-silicon layer is observed to decrease slightly by x-ray diffraction and the tensile residual stress increases rapidly by micro-Raman spectroscopy, with the change of about 82 MPa for the oxidation effect and the change of 2.78 GPa (enough for cracking) for the capillary effect. Therefore, the capillary effect plays a major role in the residual stress evolution in the stages. A simple microscopic liquid-bridge model is introduced to explain the capillary effect and its reversibility. The capillary emergence has a close relation with a great deal of the micro-pore structure of porous silicon.     

光阴极电子枪中金属光阴极的热发射度研究

对光阴极电子注入器中金属光阴极的热发射度进行了理论研究.金属光阴极的热发射度由两部分构成.一方面对于理想平坦的阴极,光电子穿越表面势垒后有一定的残余动能,造成一定的热发射度,这部分前人已经做过一些理论研究.本文改进已有的模型,进一步给出了理想平坦光阴极的热发射度.另一方面,阴极表面的粗糙度将造成热发射度的增加,本文首次解析地分析了表面粗糙度对光阴极电子枪热发射度的影响,得到表面粗糙度造成的热发射度的估计公式.本文对金刚石车削后的铜、镁的表面形貌进行了测量,表明粗糙度造成的热发射度大约0.4mm·mrad.本文的热发射度理论能够较好的解释目前国际上铜、镁阴极的热发射度的测量结果.     

HL-2A装置等离子体可见光成像系统

在HL-2A装置上研制了等离子体可见光成像系统，用于孔栏、偏滤器位形放电的诊断。该成像系统由彩色摄像机、观察窗和转向镜、广角收集和准直透镜组、采集卡和计算机组成。本文描述了系统的布局和各部件参数的匹配，报道了观测到的实验结果。等离子体成像系统能监视放电的整个过程，实时显示可见光辐射图形，特别在识别孔栏与偏滤器位形放电的诊断中发挥了重要作用，成为HL-2A装置放电的重要诊断手段。     

厚二氧化硅光波导薄膜制备及其特性分析

以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。研究了薄膜折射率和淀积速率与工艺参量之间的关系，通过棱镜耦合仪、傅里叶变换红外光谱、原子力显微镜等测试手段，分析了薄膜的结构和光学特性。结果表明，实验能快速生长厚二氧化硅薄膜，薄膜表面平整，颗粒度均匀，同时薄膜具有折射率精确可控和红外透射性能好的特点，非常适合制作光波导器件。