Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition

Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

Numerical Study on Left-Handed Materials Made of Ferrite and Metallic Wires

Due to coupling effect, we show that it is difficult to realize the left-handed material by placing metallic wires directly into a ferrite matrix. However by introducing an insulating material round the metallic wires to decouple the direct interaction between the metallic wire and ferrite matrix, we have proposed two microstructures, which are shown by numerical simulation to have negative refractive indexes. The influence of microstructure on the transmission property is also examined.     

含纳米棒银溶胶的制备及其光谱性质研究

以CTAB表面活性剂胶束为模板用化学还原法制备出含有银纳米棒的银胶体,用透射电镜(TEM)对颗 粒形貌进行了表征.UV Vis吸收谱显示,含银纳米棒溶胶有两个吸收蜂,其中长波长吸收峰位置随胶粒长径比增 加迅速红移和宽化.用多尺寸统计平均的Mie散射模型计算了纳米棒银胶体的吸收谱,较好地解释了长波长吸收 峰的宽化.以此胶体为衬底材料,测量了染料分子的表面增强拉曼散射(SERS),结果显示,SERS强度随胶体中 所含纳米棒长径比的增加呈现先显著增强后缓慢减弱的变化规律,用电磁增强理论对有关现象进行了分析.     

测度链上的柯西不等式

研究了测度链上的柯西不等式,给出测度链上柯西不等式的具体形式.此外,还对测度链上的柯西不等式作了推广.     

Bichromatic Coherent Population Trapping Under Hanle Configuration

We report the observation of bichromatic coherent population trapping under the transition ^87 RbFg = 1 → Fc = 0 with two linearly polarized laser beams by means of a Hanle effect configuration. The mechanism behind this effect is identified, and numerical solutions for the pump rates equations are presented.     

ClONO2异构化反应和分解反应的理论研究

用B3LYP/6 31+G(d)和MP2 (Full) /6 31+G(d)优化ClONO2 及其分解反应和异构化反应的过渡态和产物的分子结构 .在B3LYP/6 31+G(d)水平上计算了相关分子的振动频率 .ClONO2 的几何结构、振动频率和红外强度与实验测量值符合得很好 .找到了未曾报道的立体异构体 .对这一立体异构体进行了高级别理论方法CCSD(T) /6 311G(d)和QCISD(T) /6 311G(d)的几何结构优化和振动频率计算 ,表明它是一个稳定的立体异构体 .在所研究的几种反应中 ,ClONO2 分解为NO2 +ClO是最容易进行的反应 .而ClONO2 异构为立体异构体的反应是最难进行的反应 .其所需克服的过渡态的能垒为 4 81.5 2kJ/mol,而反应吸收能量为 2 99.85kJ/mol.次难进行的是ClONO2 经TS1到反应中间体M1,再经TS12而分解为ClNO +O2 的反应 .这个反应通道所需克服过渡态的能垒为 4 2 1.5 5kJ/mol,反应吸收能量为 15 7.98kJ/mol.从以上分析可知 ,和ClO +NO2 反应生成ClONO2 比较 ,ClONO2 具有较好的稳定性 .     

锂离子电池掺钴正极材料电子结构的DV-Xa研究

采用原子基表示的第一原理赝势方法，计算了正极材料LiMn2O4的电子结构，发现LiMn2O4的价带主要是由Mn(8)和Mn(9)的3d轨道和O(7)、O(6)、O(4)的2p轨道构成，导带主要是由Mn(8)和Mn(9)的3d轨道和O(7)的2p轨道构成．通过计算Li5Mn2C0O8的电子结构，发现在LiMn2O4中用钴离子取代16d位锰离子将使电极材料的费米能减小，放电电压降低；锂离子的净电荷增大，锂离子与氧离子的相互作用增强，可逆容量降低；同时由于价带宽度变窄，Co-O键间的相互作用比Mn-O键间的相互作用强，所以，结构稳定性增加，电极循环性能改善．     

氚化钛中氦的热解析

氚以金属氚化物贮存形式过程中，会衰变生成氦-3，从而影响金属氚化物的使用性能。文中采用热解析方法研究了不同贮存周期氦在金属氚化物中的能量状态的变化情况。     

用符合计数研究“钚的质量属性”与“氧化钚不存在属性”

符合计数的测量量为总中子计数和符合计数，而未知量有（α，n）中子与自发裂变中子之比α、泄漏增殖系数M1以及钚-240的质量。符合计数与源中子泄漏复度分布的二阶矩成正比。对MCNP程序进行修改，加入自发裂变源与（α，n）中子源的跟踪功能，直接得到了中子泄漏复度分布的二阶矩。