Tb掺杂Si纳米线的光致发光特性

以金属Au-Al为催化剂,在温度为1 100 ℃,N₂气流量为1 500 sccm、生长时间为30 min,从Si(100)衬底上直接生长了直径约为50～120 nm、长度为数百纳米的高密度、大面积的Si纳米线。然后,利用Tb₂O₃在不同温度(1 000～1 200 ℃)、掺杂时间(30～90 min)和N₂气流量(0～1 000 sccm)等工艺条件下对Si纳米线进行了Tb掺杂。最后,对Si(100)衬底进行了Tb掺杂对比。室温下,利用荧光分光光度计(Hitachi F-4600) 测试了Tb掺杂Si纳米线的光致发光特性。实验研究了不同掺杂工艺参数(温度、时间和N₂气流量)对Tb3+绿光发射的影响。根据Tb3+能级结构和跃迁特性对样品的发射光谱进行了分析。结果表明,在温度为1 100 ℃,N₂气流量为1 500 sccm、时间为30 min等条件下制备的Si纳米线为掺杂基质,Tb掺杂温度为1 100 ℃,N₂气流量为1 000 sccm、光激发波长为243 nm时,获得了最强荧光发射,其波长为554 nm(5D₄→7F₅),同时还出现强度相对较弱的494 nm(5D₄→7F₆),593 nm(5D₄→7F₄)和628 nm(5D₄→7F₃)三条谱带。Tb掺杂的体Si衬底在波长554 nm处仅有极其微弱的光致发光峰。     

Large scale silver nanowires network fabricated by MeV hydrogen(H~+) ion beam irradiation

A random two-dimensional large scale nano-network of silver nanowires(Ag-NWs) is fabricated by MeV hydrogen(H~+) ion beam irradiation. Ag-NWs are irradiated under H~+ion beam at different ion fluences at room temperature. The Ag-NW network is fabricated by H~+ion beam-induced welding of Ag-NWs at intersecting positions. H~+ion beam induced welding is confirmed by transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Moreover, the structure of Ag NWs remains stable under H~+ion beam, and networks are optically transparent. Morphology also remains stable under H~+ion beam irradiation. No slicings or cuttings of Ag-NWs are observed under MeV H~+ion beam irradiation.The results exhibit that the formation of Ag-NW network proceeds through three steps: ion beam induced thermal spikes lead to the local heating of Ag-NWs, the formation of simple junctions on small scale, and the formation of a large scale network. This observation is useful for using Ag-NWs based devices in upper space where protons are abandoned in an energy range from MeV to GeV. This high-quality Ag-NW network can also be used as a transparent electrode for optoelectronics devices.     

银纳米颗粒/聚(乙撑二氧噻吩)修饰的硅纳米线阵列的合成及可见光催化性能研究

硅纳米线阵列由于其较强的光吸收能力及硅材料的丰富储量,被认为是最具大规模应用潜力的可见光光催化剂.针对硅材料在水相环境中不稳定这一瓶颈问题,本文提出了对硅纳米线阵列"先稳定、再活化"的修饰策略.通过在硅纳米线表面修饰聚(乙撑二氧噻吩)使其稳定,之后再修饰银纳米颗粒以提高光催化效率,得到了高效、稳定的可见光光催化剂.并通过研究聚(乙撑二氧噻吩)的厚度及银纳米颗粒的担载量对光催化剂性能的影响,得到了最佳的修饰条件.     

Accelerating electrochemistry with metal nanowires

Scalable, solution-phase syntheses of metal nanowires are enabling their increased use in electrochemical processes. This review highlights recent results demonstrating how metal nanowires can exhibit better durability and higher activity than traditional metal nanoparticle electrocatalysts on carbon supports. Metal nanowires can also form interconnected two-dimensional and three-dimensional (3D) networks that eliminate the need for a carbon support, thus eliminating the detrimental effects of carbon corrosion. Porous 3D networks of nanowires can be used as flow-through electrodes with the highest specific surface areas and mass transport coefficients obtained to date, enabling dramatic increases in the productivity of electrochemical reactions. Nanowire networks are also serving as 3D current collectors that improve the capacity of batteries. The tunable surface structure and dimensions of metal nanowires offer researchers a new opportunity to create electrodes that are tailored from the atomic scale to the microscale to improve electrochemical performance.     

First-principles study of electron dynamics with explicit treatment of momentum dispersion on Si nanowires along different directions

ABSTRACT

In this research, ground-state electronic structure and optical properties along with photoinduced electron dynamics of Si nanowires oriented in various directions are reviewed. These nanowires are significant functional units of future nano-electronic devices. All observables are computed for a distribution of wave vectors at ambient temperature. Optical properties are computed under the approximation of momentum conservation. The total absorption is composed of partial contributions from fixed values of momentum. The on-the-fly non-adiabatic couplings obtained along the ab initio molecular dynamics nuclear trajectories are used as parameters for Redfield density matrix equation of motion. The main outcomes of this study are transition energies, light absorption spectra, electron and hole relaxation rates, and electron transport properties. The results of these calculations would contribute to the understanding of the mechanism of electron transfer process on the Si nanowires for optoelectronic applications.     

第一性原理研究[112]硅锗异质结纳米线的电子结构与光学性质

基于密度泛函理论体系下的广义梯度近似,本文利用第一性原理方法着重研究了[112]晶向硅锗异质结纳米线的电子结构与光学性质.能带结构计算表明:随着锗原子数的增加,[112]晶向硅锗纳米线的带隙逐渐减小;对Si_(36)Ge_(24)H_(32)纳米线施加单轴应变,其能量带隙随拉应变的增加而单调减小.光学性质计算则表明:随着锗原子数的增加,[112]硅锗纳米线介电函数的峰位和吸收谱的吸收边均向低能量区移动;而随着拉应变的增大,吸收系数峰值呈现出逐渐减小的趋势,且峰位不断向低能量区移动,上述结果说明锗原子数的增加与施加拉应变均导致[112]硅锗纳米线的吸收谱产生红移.本文的研究为硅锗异质结纳米线光电器件研究与设计提供一定的理论参考.     

Ultrasound‐Assisted Synthesis of Hybrid Vanadium Oxide/Polyaniline Nanowires

A single‐step sonochemical procedure to synthesize hybrid vanadium oxide/polyaniline nanowires starting from crystalline V₂O₅ and aniline in aqueous medium is presented. The synthesis explores the effect of high power ultrasounds on heterogeneous solid–aqueous phases, which leads to 30 nm width wires of 5 to 10 µm in length. Monomer intercalation and oxidative polymerization within the inorganic matrix proceed simultaneously with morphological changes. The electronic conductivity of hybrid nanowires reaches 0.8 S · cm⁻¹ at room temperature.

     

The number of electronic states in metallic nanowires as a function of the electrochemical potential

We derive a mathematical expression for the number of electronic states in metallic nanowires within the electrochemical environment as a function of the electrochemical potential so that the variation of the above number with respect to this potential is discussed within an electron energy range from zero energy up to Fermi energy.     

Surface State‐Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires

Wide‐bandgap semiconductor nanowires with surface defect emission centers have the potential to be used as sensitive thermometers and optical probes. Here, we show that the green luminescence of multiferroic BiFeO₃ (BFO) nanowires shows an anomalous negative thermal quenching (NTQ) with increasing temperatures. The release of trapped carriers from localized surface defect states is suggested as the possible mechanism for the increased green luminescence which was experimentally observed at elevated temperatures. A reasonable interpretation of the photoluminescence (PL) processes in BFO nanowires is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. Negative thermal quenching of BFO nanowires provides a new strategy for optical thermometry at higher temperatures.