Investigations on Pd:SnO2/porous silicon structures for sensing LPG and NO2 gas |
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Authors: | N Sankara Subramanian R Vivek Sabaapathy P Vickraman G Vimal Kumar R Sriram B Santhi |
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Institution: | (1) Department of Physics, Thiagarajar College of Engineering, Madurai, 625 015, Tamilnadu, India;(2) Department of Mechatronics, Thiagarajar College of Engineering, Madurai, 625 015, Tamilnadu, India;(3) Department of Physics, Gandhigram Rural Institute, Gandhigram, 624302, Tamilnadu, India;(4) Department of Biotechnology, S.R.M. Institute of Science and Technology, Kattankulathur, Chennai, 603203, India;(5) Department of Physics, Government Girls Higher Secondary School, Melur, 625 106, Tamilnadu, India |
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Abstract: | P-type porous silicon (PS) structure has been prepared by anodic electrochemical etching process under optimized conditions.
Photoluminescence studies of the PS structure show emission at longer wavelengths (red) for the excitation at 365 nm. Scanning
electron microscope investigations of the PS surface confirm the formation of uniform porous structure, and the pore diameter
have been estimated as 25 μm. Pd:SnO2/PS/p-Si heterojunction with top gold ohmic contact developed by conventional methods has been used as the sensor device.
Sensing properties of the device towards liquefied petroleum gas (LPG) and NO2 gas have been investigated in an indigenously developed sensor test rig. The response and recovery characteristics of the
sensor device at different operating temperatures show short response time for LPG. From the studies, maximum sensitivity
and optimum operating temperature of the device towards LPG and NO2 gas sensing has been estimated as 69% at 180 °C and 52% at 220 °C, respectively. The developed sensor device shows a short
response time of 25 and 57 s for sensing LPG and NO2 gases, respectively.
Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006. |
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Keywords: | Porous silicon Anodization Photoluminescence Pd:SnO2/PS/p-PSi heterojunction Gas sensor Response and recovery characteristics Sensitivity |
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