块对偶Toeplitz算子的乘积

本文刻画了向量值Bergman空间上块对偶Toeplitz算子有界性和紧性,给出了块对偶Toeplitz算子的乘积是块对偶Toeplitz算子的充要条件.     

Effect of the number of defect particles on the structure and dispersion relation of a two-dimensional dust lattice system

The effect of the number of defect particles on the structure and dispersion relations of a two-dimensional (2D) dust lattice is studied by molecular dynamics (MD) simulation. The dust lattice structures are characterized by particle distribution, nearest neighbor configuration and pair correlation function. The current autocorrelation function, the dispersion relation and sound speed are used to represent the wave properties. The wave propagation of the dust lattice closely relates to the lattice structure. It shows that the number of defect particles can affect the dust lattice local structure and then affect the dispersion relations of waves propagating in it. The presence of defect particles has a greater effect on the transverse waves than on the longitudinal waves of the dust lattice. The appropriate number of defect particles can weaken the anisotropy property of the lattice.     

Effect of crystallographic orientations on transport properties of methylthiol-terminated permethyloligosilane molecular junction

The understanding of the influence of electrode characteristics on charge transport is essential in the field of molecular electronics. In this work, we investigate the electronic transport properties of molecular junctions comprising methylthiol-terminated permethyloligosilanes and face-centered crystal Au/Ag electrodes with crystallographic orientations of (111) and (100), based on the ab initio quantum transport simulations. The calculations reveal that the molecular junction conductance is dominated by the electronic coupling between two interfacial metal-S bonding states, which can be tuned by varying the molecular length, metal material of the electrodes, and crystallographic orientation. As the permethyloligosilane backbone elongates, although the σ conjugation increases, the decreasing of coupling induced by the increasing number of central Si atoms reduces the junction conductance. The molecular junction conductance of methylthiol-terminated permethyloligosilanes with Au electrodes is higher than that with Ag electrodes with a crystallographic orientation of (111). However, the conductance trend is reversed when the electrode crystallographic orientation varies from (111) to (100), which can be ascribed to the reversal of interfacial coupling between two metal-S interfacial states. These findings are conducive to elucidating the mechanism of molecular junctions and improving the transport properties of molecular devices by adjusting the electrode characteristics.     

银鲳脾脏和肾脏组织细胞体外培养研究

为探究银鲳脾脏和肾脏组织细胞体外培养条件, 本研究采用组织块培养法对银鲳脾脏和肾脏组织进行原代培养. 实验选用DMEM/F-12、M199和DMEM等作为基础培养基, 在其中分别添加体积分数为10％、15％、20％的胎牛血清, 并添加青链霉素及庆大霉素以防细菌污染. 结果表明: 银鲳脾脏和肾脏组织在胎牛血清体积分数为20％的DMEM/F-12培养基中贴壁最好, 迁出细胞的种类最多, 细胞生长速度最快. 其中脾脏组织共迁出6种不同的细胞, 分别为: 免疫细胞、基质细胞、上皮样细胞、成纤维样细胞、造血灶和未知细胞; 肾脏组织共迁出3种细胞, 分别为: 上皮样细胞、巨噬细胞和成纤维样细胞.     

黄曲霉素B1在银团簇表面吸附的表面增强拉曼光谱

采用密度泛函理论(DFT)的B3LYP方法和6-311g(d, p)(C, H, O)/LanL2DZ(Ag)基组, 优化得到黄曲霉素分子AFB₁与Ag小团簇形成的复合物AFB₁-Ag_n (n=2, 4, 6)的稳定结构, 并计算了三种复合物的表面增强拉曼光谱(SERS)和预共振拉曼光谱(SERRS), 与实验结果相一致. 计算结果显示: 三种复合物表面增强拉曼光谱中C＝O伸缩振动模的增强因子约为10²-10³, 是由于极化率改变引起的静化学增强. 根据含时密度泛函理论(TDDFT)方法计算得到的吸收光谱, 分别选择407.5、446.2和411.2 nm作为入射光, 计算三种复合物的共振拉曼光谱, 发现在SERRS光谱中, Ag―O伸缩振动的增强因子达到10⁴量级, 主要是由电荷转移产生的共振增强引起的.     

阻燃PVA-g-AN的制备、表征及性能

以K₂S₂O₈-NaHSO₃氧化还原体系为引发剂, 将丙烯腈(AN)接枝到聚乙烯醇(PVA)上, 得到聚乙烯醇接枝丙烯腈聚合物(PVA-g-AN), 将其与磷酸-尿素反应制备阻燃聚乙烯醇接枝丙烯腈聚合物(FR-PVA-g-AN). 利用傅里叶变换红外光谱(FTIR)、 X射线能谱(XPS)和X射线衍射(XRD)对其结构进行表征, 并用热重分析(TGA)对其热性能进行研究. 结果表明, 当引发剂用量占反应物总质量的1%, n(K₂S₂O₈):n(NaHSO₃)=5:1, m(丙烯腈):m(聚乙烯醇)=3.5:1, 70 ℃反应4 h时, 接枝率可达190%; 在m(磷酸):m(尿素)=5:1, 85 ℃条件下处理接枝产物PVA-g-AN 4 h时, 获得阻燃性能良好的FR-PVA-g-AN, 700 ℃马弗炉热处理后, 残炭量达到63%. TGA结果显示, FR-PVA-g-AN的热降解过程较PVA减慢, 且800 ℃后残炭量由PVA的3.12%增加到54.3%, 说明FR-PVA-g-AN具有优异的热稳定性和成炭性.     

An improvement to computational efficiency of the drain current model for double-gate MOSFET

As a connection between the process and the circuit design, the device model is greatly desired for emerging devices, such as the double-gate MOSFET. Time efficiency is one of the most important requirements for device modeling. In this paper, an improvement to the computational efficiency of the drain current model for double-gate MOSFETs is extended, and different calculation methods are compared and discussed. The results show that the calculation speed of the improved model is substantially enhanced. A two-dimensional device simulation is performed to verify the improved model. Furthermore, the model is implemented into the HSPICE circuit simulator in Verilog-A for practical application.     

溶胶-凝胶法制备纳米WO_3气致变色材料

本文主要阐述了纳米WO3气致变色材料的溶胶-凝胶制备方法、气致变色机理及其应用的研究新进展,重点评述了溶胶-凝胶法中各种制备条件诸如掺杂、模板剂、溶剂、热处理温度等对这种材料的结构和性能的影响,最后展望了纳米WO3气致变色材料的研究和应用前景。我们认为,在未来的溶胶-凝胶法制备纳米WO3气致变色材料领域,如何进行最优化的掺杂设计和选择高效模板剂、如何降低气体检测温度以及气致变色机理等将是该项研究的重点。     

溶胶-凝胶法制备纳米WO3气致变色材料

本文主要阐述了纳米WO₃气致变色材料的溶胶-凝胶制备方法、气致变色机理及其应用的研究新进展,重点评述了溶胶-凝胶法中各种制备条件诸如掺杂、模板剂、溶剂、热处理温度等对这种材料的结构和性能的影响,最后展望了纳米WO₃气致变色材料的研究和应用前景。我们认为,在未来的溶胶-凝胶法制备纳米WO₃气致变色材料领域,如何进行最优化的掺杂设计和选择高效模板剂、如何降低气体检测温度、以及气致变色机理等将是该项研究的重点。     

镧钡改性的γ-Al2O3的制备及其热稳定性研究

以硝酸铝为氧化剂,甘氨酸作为还原剂,添加硝酸钡-硝酸镧作为改性剂,通过溶液燃烧合成法制备了改性的γ-Al2O3纳米粉体.通过对产物进行X射线衍射分析(XRD)、热重-差热分析(TG-DTA)、扫描电镜分析(SEM)和比表面积分析,研究了改性剂的添加量、煅烧温度、煅烧时间等工艺参数对最终产物的物相、形貌、粒径等的影响.结果表明,制备硝酸钡-硝酸镧改性的γ-Al2O3的最佳工艺条件为:以甘氨酸为燃烧剂,硝酸镧、硝酸钡、硝酸铝的摩尔比为0.01:0.03:1,煅烧温度为1050℃,煅烧时间为4h.通过掺杂稀土元素La和碱土金属元素Ba,可同时阻止Al3+的表相和体相扩散.