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81.
A. S. Shalabi M. A. Kamel H. Y. Ammar 《International journal of quantum chemistry》2005,103(4):432-448
The FA1:Cs+ and FA2:Li+ color centers at the low coordination (100) and (110) surfaces of AgCl and AgBr play important roles in laser light generation and color image formation. Double‐well potentials at these surfaces are investigated by using ab initio calculations. Quantum clusters were embedded in the simulated Coulomb fields that closely approximate the Madelung fields of the host surfaces, and ions that are the nearest neighbors to the FA ? defect site are allowed to relax to equilibrium. The calculated Stokes shifts suggest that laser light generation is sensitive to the simultaneous effects of the vibrational coupling mode, the impurity cation, the coordination number of the surface ion, the lattice anion, and the choice of the basis set centered on the anion vacancy. An attempt has been made to explain these effects in terms of Madelung potential, electron affinity, and optical–optical conversion efficiency. All relaxed excited states of the defect‐containing surfaces are deep below the lower edges of the conduction bands of the ground‐state defect‐free surfaces, suggesting that the FA(I):Cs+ and FA(II):Li+ centers are suitable laser defects. The dependence of orientational destruction, recording sensitivity, and exciton (energy) transfer on the empty cation; the coordination number of the surface ion; and the lattice anion is clarified. The Glasner–Tompkins empirical rule was generalized to include the impurity cation and the coordination number of the surface ion. As far as color image formation is concerned, the supersensitizer was found to increase the sensitizing capabilities of two primary dyes in the excited states by increasing the relative yield of quantum efficiency. The (110) surfaces of AgBr and AgCl were more sensitive than the corresponding (100) surfaces, and AgBr thin film was found to be more sensitive than that of AgCl. On the basis of quasi‐Fermi levels, the difference in the sensitizing capabilities between the examined dyes in the excited states is determined. © 2005 Wiley Periodicals, Inc. Int J Quantum Chem, 2005 相似文献
82.
ZHANG Yong-Fan LIN Wei WANG Qi-Wei LI Yi LI Jun-Qian 《结构化学》2007,26(5):606-612
The reduced SnO2(110) surface has been investigated by using first-principles method with a slab model. By examining the vacancy formation energy of three kinds of reduced SnO2(110) surfaces, the most energetically favorable defect surface is confirmed to be the surface with the coexistence of bridging and in-plane oxygen vacancies, which is different with the traditional model by only removing bridging oxygen. The results of band structure calculations indicate that the electronic structure of this defect surface is similar to the SnO surface. 相似文献
83.
采用离散变分Xα方法分别计算了CO和NO以C(或N)端顶位吸附在CuO(110)及Cu2O(110)表面上的基态势能曲线,结果表明:CO在Cu2O表面上的吸附强,而在CuO表面上的吸附弱;NO则在CuO表面上吸附强,在Cu2O表面上吸附弱.它们的吸附能的大小顺序为:CuO-NO>Cu2O-CO>Cu2O-NO>CuO-CO.对于CuO-NO(或CO)吸附体系,主要是Cu的3d轨道与吸附分子的2π轨道间的相互作用;对于Cu2O-CO(或NO)吸附体系,则主要是吸附质分子的5σ及2π分子轨道与其顶位Cu1的4s及4p轨道和侧位Cu2的3d轨道相互作用.本文通过吸附势能曲线、态密度分析、成键分析及电荷转移量和方向等方面对实验现象做了合理的解释. 相似文献
84.
Atom-resolved images of a TiO2(110)-(1×1) surface and individual formate and acetate ions adsorbed on the surface were obtained by noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum. In contrast to previous scanning tunneling microscopic studies imaging five-fold coordinated Ti atoms, outermost atoms of bridge-bound oxygen ridges of the surface were resolved as protruding rows by NC-AFM. High-resolution image of the surface revealed that the bridging oxygen atoms on terraces ordered in a (1×1) periodicity. Randomly distributed point and multiple defects of oxygen atoms were also imaged as dark spots. The (2×1) overlayer of formate and acetate ions were resolved as ordered bright spots. Dispersed formate ions at a low coverage were also observed as bright spots between the bridging oxygen ridges along the [001] direction. 相似文献
85.
Rubn Prez Ivan
tich Michael C. Payne Kiyoyuki Terakura 《Applied Surface Science》1999,140(3-4):320-326
Total-energy pseudopotential calculations are used to study the imaging process in noncontact atomic force microscopy (AFM) on Si(111), Si(100) and GaAs(110) surfaces. The chemical bonding interaction between a localised dangling bond on the atom at the apex of the tip and the dangling bonds on the adatoms in the surface is shown to dominate the forces and the force gradients and, hence, to provide atomic resolution. The lateral resolution capabilities are tested in both the Si(100) and the GaAs(110) surfaces. In the first case, the two atoms in a dimer can be resolved due to the dimer flip induced by the interaction with the tip during the scan, while in the GaAs(110), we identify the anion sublattice as the one observed in the experimental images. 相似文献
86.
Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO_3(110) substrates 下载免费PDF全文
ZnO thin film growth prefers different orientations on the etched and unetched SrTiO 3(STO)(110) substrates.Inclined ZnO and cobalt-doped ZnO(ZnCoO) thin films are grown on unetched STO(110) substrates using oxygen plasma assisted molecular beam epitaxy,with the c-axis 42 inclined from the normal STO(110) surface.The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001].The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D 0 X emissions associated with A 0 X emissions,and the characteristic emissions for the 2 E(2G)→ 4A2(4F) transition of Co 2+ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film,indicating the incorporation of Co 2+ ions at the lattice positions of the Zn 2+ ions.The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature. 相似文献
87.
《Current Applied Physics》2018,18(1):96-101
We present our first-principles calculation of the adsorption and diffusion of a carbon adatom on the H-terminated and clean Ge(110) surfaces, which are essential processes in the nucleation and growth of a monolayer graphene on Ge(110) by chemical vapor deposition. On the H-terminated surface, the C adatom spontaneously substitutes H atom(s) to form a monohydride structure (CH) or a dihydride structure (CH2) and makes direct bonds with the substrate Ge atoms. The resulting diffusion barriers of the C adatom are 2.67 and 6.45 eV parallel to and perpendicular to the zigzag Ge chains of the surface, respectively. On the clean surface, the C adatom embeds into the zigzag Ge chain with nearly no barrier, kicking out a Ge atom out of the chain at the same time. The kicked-out Ge atom, instead of the C adatom, becomes a diffusion species with the barrier less than 0.63 eV. The formation of the C composite structures makes the C adatom difficult to diffuse both on the H-terminated and clean Ge(110) surfaces, which suggests that the nucleation and growth of the graphene islands from C seeds is much suppressed. We propose a growth mechanism of graphene monolayer going round the diffusion of the C adatoms on the Ge(110) surfaces. 相似文献
88.
在P110油管钢表面分别制备了Cu镀层和Ni-P镀层,采用SEM、EDS和STM等方法对比研究了P110油管钢基体、Cu镀层和Ni-P镀层的摩擦磨损性能,分析了磨痕形貌、磨损率和摩擦系数的异同,探讨了磨损机理.结果表明:Cu镀层和Ni-P镀层的耐磨性均明显优于P110油管钢基体,且Ni-P镀层的耐磨性优于Cu镀层;P110油管钢基体的磨痕呈磨坑形貌,磨损机理为剥层磨损和磨粒磨损;Cu镀层的磨痕表面附着Cu磨屑,磨屑受压发生塑形变形,磨损机理为疲劳磨损和黏着磨损;Ni-P镀层的磨痕呈细小的犁沟形貌,磨损机理为轻微磨粒磨损. 相似文献
89.
90.
采用低能离子N^ 注入D110,诱变选育谷氨酸高产菌种,改进了发酵生长曲线,提高了菌种的产酸率,得到了菌种存活率与注入剂量的初步关系、流如Tween-60时机与产酸率的密切关系,为进一步的诱变选育试验提供了有益的参考。 相似文献