Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires

Silver nanowire(AgNW) networks have been demonstrated to exhibit superior transparent and conductive performance over that of indium-doped tin oxide(ITO) and have been proposed to replace ITO, which is currently widely used in optoelectronic devices despite the scarcity of indium on Earth. In this paper, the current spreading and enhanced transmittance induced by AgNWs, which are two important factors influencing the light output power, were analyzed. The enhanced transmittance was studied by finite-difference time-domain simulation and verified by cathodoluminescence measurements.The enhancement ratio of the light output power decreased as the Ga P layer thickness increased, with enhancement ratio values of 79%, 52%, and 15% for Ga P layer thicknesses of 0.5 μm, 1 μm, and 8 μm, respectively, when an AgNW network was included in Al Ga In P light-emitting diodes. This was because of the decreased current distribution tunability of the AgNW network with the increase of the Ga P layer thickness. The large enhancement of the light output power was caused by the AgNWs increasing carrier spread out of the electrode and the enhanced transmittance induced by the plasmonic AgNWs. Further decreasing the sheet resistance of AgNW networks could raise their light output power enhancement ratio.     

高斯叠代法研究相控阵非线性声场

相控阵在聚焦超声治疗应用中不可避免地受到非线性影响,提出了采用高斯叠代法计算相控阵的非线性声场。在该方法中,利用预设焦点参数并应用伪逆矩阵算法得到阵元的激励参数;然后将阵元近似拟合成一组高斯声束的叠加,通过高斯声束叠代计算非线性声场。数值计算中以64阵元一维相控阵为研究对象;线性条件下,高斯叠代法结果与菲涅耳积分结果的误差低于0.5%,验证了该方法的可行性;单焦点及双焦点模式的相控阵非线性声场结果表明非线性效应能提高焦点聚焦性能,并且非线性效应与激励声压及激励频率成正比。      

基于金纳米棒的核壳纳米结构及其光学性质研究

以金纳米棒为核的核壳结构纳米粒子由于它独特的光学性质、结构特点以及在催化、表面增强拉曼散射方面的应用前景,成为目前纳米材料研究的热点之一。本文重点介绍以金纳米棒为核,包覆其他无机材料的核/壳结构之合成方法,同时阐述其结构特征、光学性质以及外界条件对结构和性质的影响。其中,由于金银纳米核壳结构的研究开始最早,研究最为深入,故对其进行重点阐述。最后对以金纳米棒为核的核壳结构未来研究进行了展望。     

注入电流对垂直腔面发射激光器横模特性的影响

对980nm氧化限制型垂直腔面发射激光器横模进行测试和研究,理论上从时间、空间变量的速率方程出发,利用空间积分法分析了典型电注入参数对弱折射率导引垂直腔面发射激光器(VCSELs)横模行为的影响,通过实验测试,得到VCSELs的横模光场分布情况,并与理论分析进行对比,得出相应的实验结果,在氧化孔径不变的情况下,随着注入电流的增加,载流子分布从有源区中心向边缘移动,模式从低阶基模向高阶模转变,并发生了较强的模式竞争以及载流子空间烧孔效应,最终导致基模强度的降低.另一方面,通过比较不同注入孔径下高阶模的发生时 关键词： 横模 垂直腔面发射激光器 空间烧孔现象 模式竞争     

包膜黏弹特性及声驱动参数对相互作用微泡动力学行为的影响

关于多气泡相互作用的理论研究对于深入理解超声造影剂在医疗领域中的应用机理具有重要意义。本工作建立了一个2维轴对称有限元模型来研究流体环境中超声造影剂双气泡相互作用,讨论了驱动超声频率和气泡尺寸对气泡之间吸引和排斥趋势的影响,得到了气泡半径与气泡之间距离随时间变化的曲线,以及气泡周围流体速度场的细节,并且研究了气泡包膜参数(即表面张力系数和粘度系数)对气泡相互作用的影响.结果表明,相互作用中的气泡对整体的相对运动趋势由驱动频率和共振频率之间的关系决定;在超声参数固定时,气泡包膜的粘弹特性可用来调控气泡间相互作用强度。结果对实验中观察到的气泡聚集现象进行了合理解释,并为超声造影剂在医疗实践中的应用提供了基础理论支撑.      

Micromechanical tunable vertical-cavity surface-emitting lasers

We report the study on a short wavelength-tunable vertical-cavity surface-emitting laser utilizing a monolithically integrated bridge tuning microelectromechanical system. A deformable-bridge top mirror suspended above an active region is utilized. Applied bridge-substrate bias produces an electrostatic force which reduces the spacing of air-gap and tunes the resonant wavelength toward a shorter wavelength (blue-shift). Good laser characteristics are obtained: such as continuous tuning ranges over 11 nm near 940 nm for 0--9 V tuning bias, the peak output power near 1 mW and the full-width-half-maximum limited to approximately 3.2--6.8 nm. A detailed simulation of the micromechanical and optical characteristics of these devices is performed, and the ratio of bridge displacement to wavelength shift has been found to be 3:1.     

The scalability of the tunnel-regenerated multi-active-region light-emitting diode structure

The scalability of the tunnel-regenerated multi-active-region （TRMAR） structure has been investigated for the application in light-emitting diodes （LEDs）. The use of the TRMAR structure was proved theoretically to have unique advantages over conventional slngle-active-layer structures in virtually every aspect, such as high quantum efficiency, high power and low leakage. Our study showed that the TRMAR LED structure could obtain high output power under low current injection and high wall-plug efficiency compared with the conventional single-active-layer LED structure.     

GaN基多量子阱发光二极管的极化效应和载流子不均匀分布及其影响

制备了GaN基绿光发光二极管.利用耦合法求解了在自发极化和压电极化效应影响下的GaN/InGaN量子阱的极化电场强度.考虑载流子在量子阱间的不均匀分布，模拟计算了系统的一维薛定谔方程、稳态速率方程和泊松方程，得到了载流子在各个阱间的分布比值和辐射复合速率.同时还得到了不同电流下电致发光(EL)谱的峰值波长、谱峰半高宽及EL谱强度的变化情况.发现当测试电流由10 mA 增加到70 mA时，理论结果与实验结果能很好符合. 关键词： 极化 载流子不均匀分布 复合速率     

GaN基双波长发光二极管电致发光谱特性研究

通过同时调节同一有源区内不同阱层和垒层的In组分，制备了GaN基单有源区蓝、绿光双波长发光二极管(LED).实现了20mA下蓝、绿光同时发射.实验发现随注入电流由10mA增大到60mA，电致发光(EL)谱中绿光峰强度相对于蓝光峰强度不断增强，峰值波长蓝移也更加明显.同时考虑极化效应和载流子不均匀分布的影响，通过对一维薛定谔方程、稳态速率方程和泊松方程的联立自洽求解.分析了测试电流下蓝、绿光EL谱峰值波长和功率的变化情况.发现理论结果与实验结果有很好地符合. 关键词： 极化 载流子不均匀分布 双波长     

Strain Field in GaAs/GaN Wafer-Bonding Interface and Its Microstructure

The strain fields in a wafer-bonded GaAs/GaN structure are measured by electron backscatter diffraction （EBSD）. Image quality （IQ） of EBSD Kikuchi patterns and rotation angles of crystal lattices as strain sensitive parameters axe employed to chaxacterize the distortion and the rotation of crystal lattices in the GaAs-interface-GaN structure, as well as to display the strain fields. The results indicate that the influence region of the strains in the wafer-bonded GaAs/GaN structure is mainly located in GaAs side because the strength of GaAs is weaker than that of GaN. The cross-sectional image of transmission electron microscopy （TEM） further reveals the distortion and the rotation of crystal lattices induced by strains systematically.