Origin of ultraviolet photovoltaic effect in Fe3O4 thin films

We have investigated the transport and ultraviolet photovoltaic properties of Fe$_{3}$O$_{4}$ thin films grown on glass substrates by facing-target sputtering technique. The nonlinear dependence of current-density on voltage suggests that the transport process is most likely the tunnelling process and grain boundaries act as barriers. Furthermore, nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for Fe$_{3}$O$_{4}$ film under ultraviolet laser, since the energy gap of Fe$_{3}$O$_{4}$ is smaller than the ultraviolet photon energy. And then the built-in electric field near the grain boundaries will separate carriers, leading to the appearance of an instant photovoltage.     

Ultrafast Photoelectric Effects in Heterojunctions of La0.7Sr0.3MnO3 and Si

Ultrafast photoelectric effects have been observed in p-n heterojunctions of La0.7Sr0.3MnO3(LSMO)/Si and LSMO/SrTiO3_/Si for the first time. The rise time was about 1 ns and the full width at half maximum was about 2ns for the photovoltaic pulse when the heterojunction was irradiated by a laser of -25 ps pulse duration and 1064 nm wavelength. The photovoltaic sensitivity was as large as 435 mV//mJ for a 1064 nm laser pulse. No such pulse was observed with irradiation from a pulsed 10.6 μm CO2 laser.     

Heusler合金Pd2 CrAl四方变形、磁性及弹性常数的第一性原理计算

采用基于密度泛函理论的投影缀加波方法研究了Heusler合金Pd₂CrAl的四方变形、磁性和弹性常数. 四方变形中,Pd₂CrAl在c/a≈1.20处出现总能的局域最小值,对应一个稳定的马氏体. Pd₂CrAl的L2₁结构和四方结构的单胞总磁矩分别为3.825μ_B和3.512μ_B. 在这两种结构中Cr原子均是Pd₂CrAl总磁矩的主要贡献者,Pd和Cr原子间存在很强的杂化作用,Cr的3d电子的t_2g和e_g两个亚能带是Pd₂CrAl磁性的主要来源. 弹性常数的计算结果显示,Pd₂CrAl的L2₁结构和四方结构的弹性常数均满足相应结构的稳定性判据. 关键词： Heusler合金 四方变形 磁性 弹性常数     

H3PAuPh与(H3PAu)2(1,4-C6H4)2光谱性质的密度泛函研究

用密度泛函(DFT)方法优化了配合物H₃PAuPh(a),(H₃PAu)₂(1,4-C₆H₄)₂(b)的基态的几何结构,并用含时密度泛函方法计算了它们的吸收光谱.结果表明配合物a与 b的最低能量吸收谱线的波长分别为257.5 nm和307.6 nm,皆具有C(2p)→Au(6p)电荷转移参与下的p_π 关键词： 激发态 光谱 密度泛函 3')" href="#">AuPH₃     

Terahertz-dependent identification of simulated hole shapes in oil gas reservoirs

Detecting holes in oil–gas reservoirs is vital to the evaluation of reservoir potential. The main objective of this study is to demonstrate the feasibility of identifying general micro-hole shapes, including triangular, circular, and square shapes, in oil–gas reservoirs by adopting terahertz time-domain spectroscopy(THz-TDS). We evaluate the THz absorption responses of punched silicon(Si) wafers having micro-holes with sizes of 20 μm–500 μm. Principal component analysis(PCA) is used to establish a model between THz absorbance and hole shapes. The positions of samples in three-dimensional spaces for three principal components are used to determine the differences among diverse hole shapes and the homogeneity of similar shapes. In addition, a new Si wafer with the unknown hole shapes, including triangular, circular, and square, can be qualitatively identified by combining THz-TDS and PCA. Therefore, the combination of THz-TDS with mathematical statistical methods can serve as an effective approach to the rapid identification of micro-hole shapes in oil–gas reservoirs.     

基于太赫兹光谱-统计分析的大气PM_(2.5)监测研究（英文）

应用太赫兹技术对大气中动力学直径小于2.5μm(PM_(2.5))的细颗粒物进行了定量研究。PM_(2.5)质量和太赫兹吸光度之间存在线性关系,相关系数为0.86。应用主成分分析的方法,可证明随着PM_(2.5)质量的增加,与吸收系数存在相似的趋势。为了提高预测精度,采用偏最小二乘,支持向量机和反向传播人工神经网络对PM_(2.5)进行定量研究。与单一的线性模型相比,统计模型具有较大的预测相关性和较小的误差。对于神经网络模型,训练集与预测集的相关系数和均方根误差分别达到0.999和0.016mg,0.912和0.207mg。因此,THz技术和统计学方法的结合可提供较高精度的预测,作为一种监测PM_(2.5)的有效手段。     

太赫兹时域光谱无损检测核桃品质的研究

以核桃为研究对象,探讨太赫兹时域光谱技术对其变质情况、壳厚测量的研究。首先对虫蛀、霉变、正常核桃壳、仁标样采集太赫兹时域光谱,比较分析变质与正常核桃谱图及吸收谱差异,为剔除变质核桃打下基础。其次联用透射和反射式太赫兹时域光谱系统,创建核桃壳计算公式,在获取核桃壳理论折射率基础上,换算得到未知核桃壳厚,相对误差为3.7%。分别从物理、化学指标光谱响应特征差异入手,实现太赫兹无损检测核桃品质。     

陶瓷单晶(100)基底上外延生长Pt薄膜

用对靶溅射技术在MgAl2O4 (100) (MAO) 和SrTiO3 (100) (STO)单晶基底上制备Pt薄膜.基底温度为700℃时,Pt薄膜外延生长为(200)取向,Pt/STO 薄膜的电阻率很低,而Pt/MAO 薄膜表现出高电阻特征.此外,Pt (50nm)/La0.67Ca0.33MnO3 (50nm)/STO的制备和研究表明,在包括庞磁电阻材料的器件设计中,Pt是一种较好的电极材料.