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(Ti,Al)N Film on Normalized T8 Carbon Tool Steel Prepared by Pulsed High Energy Density Plasma Technique 下载免费PDF全文
Under optimized operating parameters, a hard and wear resistant (Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano- indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense ahd uniform and is mainly composed of (Ti,Al)N and A1N hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about lO00nm and mean hardness value of the film is about 26 GPa. Under dry sliding wear test conditions, relative wear resistance of the (Ti, Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the (Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample. 相似文献
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Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials 下载免费PDF全文
Low-density materials, commercially available hydrogensilsesquioxane (HSQ) offer a low dielectric constant. HSQ films can be obtained by spin on deposition (SOD). In this work, low-dielectric-constant HSQ films are prepared by using D5 (decamethylcyclopentasiloxane) as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field. 相似文献
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High-order harmonic generations from a one-dimensional Coulomb potential atom are calculated with the initial state prepared as a coherent superposition between its ground and first excited states. When the energy difference of the two states is small, we can choose proper laser pulse such that the first excited state can be excited only to other bound states instead of being ionized. We show that only the hyper-Raman lines are observable instead of the harmonics. The energy difference of the ground and the first excited state can be deduced from the highest peak of the hyper-Raman lines. We further show that the similar results can be obtained by using a combination of two laser pulses with different frequencies interacting with the atom initially at the ground state. 相似文献
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