〈111〉晶向冲击加载下单晶铜中纳米孔洞增长的早期动力学行为

利用分子动力学方法模拟计算了单晶铜中纳米孔洞在沿〈111〉晶向冲击加载下增长的早期过程.测量发现不同加载强度下等效孔洞半径随时间近似成线性变化.观测到单孔洞增长的两种位错生长机理：加载强度较低时，只在沿着冲击加载方向的孔洞顶点附近区域有位错的成核和运动；而随着加载强度超过一定阈值，在沿冲击加载和其垂直方向的孔洞顶点区域都观察到位错的成核和运动.在前一种机理作用下，孔洞只沿加载方向增长；在后一种机理作用下，孔洞同时沿加载和垂直于加载方向增长.分析孔洞表面原子的位移历史，发现沿加载及与其垂直方向的孔洞顶点沿径向的速度基本恒定，由此提出了一个孔洞生长模型，可以解释孔洞增长的线性生长规律. 关键词： 纳米孔洞 分子动力学 冲击加载 位错     

混配配合物[Co(cpida)(C7H5N2)2]·C7H5N2·5H2O

在溶液中用N-(邻苯甲酸基)-亚氨基二乙酸、苯并咪唑和Co(Ac)2·4H2O进行自组装合成了标题三元金属混配配合物.用元素分析、红外光谱、单晶衍射对配合物的组成和结构进行了表征,确定配体N-(邻苯甲酸基)-亚氨基二乙酸中的3个羧基为单齿形式与中心金属钴离子配位.     

三种瓜环与4,4′-联吡啶及N,N′-二甲基4,4′-联吡啶盐酸盐相互作用的研究

以七元瓜环(Q[7])和新型椭圆型改性瓜环———对称四甲基取代六元瓜环(TM eQ[6])为主体,4,4′-联吡啶的盐酸盐(44)以及N,N′-二甲基4,4′-联吡啶的盐酸盐(dm44)为客体的主客体相互作用进行了考察.实验结果表明,Q[7]与客体44及dm44作用体系中,客体为了更有效地被主体Q[7]包结,在Q[7]内腔中呈倾斜状分布的几率最高.用核磁共振、循环伏安以及紫外吸收光谱对实验结果进行了印证和补充,验证了TM eQ[6]与客体44及dm44可发生较强的相互作用,形成一维的自组装超分子结构.核磁共振以及循环伏安方法的实验结果表明,没有观察到Q[6]与客体44及dm44的明显作用,而紫外吸收光谱方法证实,Q[6]与客体44确实存在一定的相互作用,比较主客体的结构特征,该作用体系也可能存在自组装的一维超分子结构等多种作用形式.     

Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.     

A Movable Mass Spectroscopy Sampling Apparatus for Measuring Spatial Distribution of Neutral Radicals in Silane Plasma

A movable mass spectroscopy gas sampling apparatus has been established and a straight-line fit of silane depletion fraction f is proposed. The spatial density distributions of SiHn (n=0-3) radicals in silane radio frequency glow discharge have been measured by a mass spectrometer. The experimental results demonstrate that the densities of the neutral radicals have the peak value near the middle position of electrodes, and the densities of SiH2 and SiH3 are higher than those of Si and SiH in silane plasma. This reveals that SiH2 and SiH3 may be the primary precursors in forming the a-Si:H film.     

INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS β-SIC

Crystal Si were implanted with different doses of C⁺ from 10¹¹ to 10¹⁷ cm^-2 at an energy of 50 keV. β-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C⁺ dose ≥10¹⁵ cm^-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C⁺ dose increases; the samples with C⁺ dose ≤10¹⁴ cm^-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of β-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous β-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission.     

用精细结构分析光学成象质量

在研究光学象质评价时,需要一个标准,OTF值可作为光学成象的评价标准.所以长期以来,许多人以扩展函数为中心而集中研究OTF。扩展函数的提出是以物理光学衍射理论为基础的,点物经过被谢光学透镜或光学系统后在象面上总有扩展,称其为点扩展函数。加工中出现的误差以及光学材料内在存有的质量缺陷使得扩展函数的形状变得更为复杂。本文的重点是研究扩展函数与成象失真度之间的关系及离散值的应用。     

A Characterization of Quasitriangular Hopf Algebras

In this paper,we show that if H is a finite dimensional Hopf algebra then H is quasitri-angular if and only if H is coquasi-triangular. As a consequentility ,we obtain a generalized result of Sauchenburg.     

激光合作目标用玻璃微珠的研制

本文研究了玻璃及成珠工艺对激光合作目标特性的影响，并设计了特殊设备和工艺规程，在此基础上研制出高性能激光合作目标用的玻璃微珠