广义的一维Fibonacci结构

本文提出一维k组元的Fibonacci结构,它包含k个无公度的基本长度,是具有两个基本长度的标准Fibonacci结构的自然推广,投影理论被用来处理它的X射线衍射花样及其指标化问题,理论模拟被用于验证投影理论的结果,值得注意的是,对于有限的链长,当k足够大时,它的衍射谱将趋于混沌。 关键词：     

用原子位形几率波理论研究插层化合物MxTX2中M离子的有序结构

本文就插层化合物M_xTX₂中占据八面体间隙的M离子建立了离子-空位格气模型.用原子位形几率波理论研究了M离子的有序结构,得到了3种最稳定的有序结构,并定量地分析了相互作用参数对有序结构形成的决定作用.最后对已有实验结果进行了分析和讨论.     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Yb:FAP和Yb:C3S2-FAP晶体光谱的温度特性和选择激发

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Sn+1(1)内凸超曲面为边界的区域的第一特征值估计

M是Sn+1(1)内紧致嵌入凸超曲面.M分Sn+1(1)为两个连通区域Ω1和Ω2. Ω1=M和Ω1是凸的.本文估计了Ω1的Laplace算子的第一特征值的下界.     

函数模拟法求解锥形模超塑挤压的力学场——超塑挤压解析理论之一

本文首次用模拟位移函数的方法,给出锥形模超塑挤压力学场的解析式以及应变、应变速率和应力的约束方程。由于实验选用的是典型超塑性合金ZnAl₅,所以结果有相当的包络性。即使对于非典型超塑性材料,这种方法亦有普遍意义。     

Influences of Thalliation on the Morphology and Critical Temperature of Tl2Ba2CaCu2O8 Thin Films

Tl2Ba2CaCu2Ox(Tl-2212) thin films were prepared by the two-step technique.A precursor film was first prepared by the pulsed laser deposition method,and then experienced the incorporation of thalliation in a one-step or two-step annealing process.The experimental results show that the two-step annealing process produces dense and smooth films,and that the one-step annealing process produces a high critical temperature film of 101K,but the transition width is wide.Precursor films with homogeneous Ba2Ca1.3Cu2.1Ox composition are essential for producing high-quality Tl-2212 films.