双折射吸收非线性介质薄膜中倍频的产生

从二次谐波电场满足的波动方程出发，考虑到介质对二次谐波的吸收以及把完全边界条件应用于基频波和二次谐波在介质的入射面和出射面之间的反射效应，推导出了单光轴非线性薄膜介质中的二次谐波输出功率的计算式.结果表明：当采用复折射率的概念时，可以把非线性无吸收介质的二次谐波输出功率计算式应用到非线性吸收介质二次谐波输出功率计算式中去.     

Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

Germanium doping in silica can be used as a method for nonlinearity enhancement.Properties of the enhanced nonlinearity in photonic crystal fiber(PCF)with a GeO2-doped core are investigated theoretically by using all-vector finite element method.Numerical result shows that the nonlinear coefficient of PCF is greatly enhanced with increasing doping concentration,furthermore,optimal radius of the doped region should be considered for the desired operating wavelength.     

立方非线性产品包装损坏边界的三维曲面表示

用三次Ｂ样条函数配点法，求得在矩形波冲击下具有立方非线性产品包装的冲击谱。讨论了软、硬非线性及外界激励幅值对产品损坏边界的影响。提出用损坏边界曲面来描述非线性产品包装的安全区域，并作出了相应的损坏边界曲面．     

跳跃非线性项依赖于导数的二阶微分方程周期解的存在性

本文研究二阶微分方程χ"+aχ+-bχ-+f(χ)g(χ'=p(t)周期解的存在性,这里χ+=max{χ,0},χ-=max{-χ,0},a,6是正常数并且点(a,b)位于某一条Fucik谱曲线上.当g(χ)的极限lim.g(χ)=g(+∞),lim g(χ)=g(-∞)和f(χ)的极限lim,g(χ)=f(+∞),lim f(χ)=f(-∞)都存在且有限时,给出了此方程存在周期解的充分条件.     

Nonlinear Optical Processes in Doped Semiconductor Superlattices

For doped semiconductor superlattices we have analyzed the effects of absorption saturation and change in the refractive index depending on the level of their excitation and structure parameters. The calculations were carried out with account for the tails of the density of states and screening of the electrostatic potential. It is shown that doped superlattices may display shading, i.e., the increase in the absorption coefficient at a fixed frequency with increase in light intensity. For –doped superlattices a stronger nonmonotonicity of the change in the refractive index with increase in the excitation level in comparison with typical structures can manifest itself.     

Mechanism Study for Thermal/Electric Field Poling of Fused Silica

On the basis of the experimental reports, the mechanism of the second-order susceptibility ⁽²⁾ for the thermal/electric field poling of fused silica is analyzed, and expressions for ⁽²⁾ are detailedly derived and numerically calculated for the first time. By comparison the theoretical value of ⁽²⁾ with the experiment results, we propose that the effective ⁽²⁾ is created via both the interaction of the intense electric field with the third-order susceptibility ⁽³⁾ and the dipole orientation. The theoretical results show that, in the differently applied voltage, the dipole orientation and ⁽³⁾ play different role in the formation of ⁽²⁾. This theory successfully explains some experiment results.     

Large near resonance third order nonlinearity in GaN

We have studied third order nonlinearities, including two-photon absorption coefficient and nonlinear refractive index n ₂, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n ₂ and . The distribution of n ₂ versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large on the order of 10 cm/GW and large negative n ₂ with a magnitude on the order of several 10^–12 cm²/W were obtained. The at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode.     

向列相液晶中强非局域空间光孤子传输的理论研究

对向列相液晶中非局域空间孤子的传输进行了理论研究.基于非线性液晶孤子传输方程，采用Gauss形式的试探解，不仅得到了空间孤子的解析解,而且还在临界功率附近得到了呼吸子的解析解.通过数值模拟证明我们的结果比Conti和Assanto等人的结果更合理.同时，对液晶中的非局域孤子模型和Snyder等提出的强非局域孤子模型进行了全面的比较. 关键词： 向列相液晶 空间孤子 非局域非线性 呼吸子     

负五阶非线性下预啁啾高斯光脉冲的啁啾和频谱

为探究光纤负五阶非线性和光脉冲预啁啾对高斯光脉冲频率啁啾和频谱的综合影响,在忽略光纤色散的情况下,利用包含三五阶非线性的扩展非线性薛定谔方程,计算和分析了啁啾高斯脉冲的频谱和总啁啾。结果表明,脉冲无预啁啾时,负五阶非线性的存在可使脉冲频率啁啾的形状由单“S”形变为双“S”形,并使脉冲的中心附近由正啁啾变为负啁啾。此外,负五阶非线性的存在使预啁啾对脉冲频谱的影响发生了较大的变化。预啁啾与非线性所致啁啾叠加后对脉冲频谱的谱峰数目影响较小,而对能量在各个谱峰上的分布影响较大,在某些最大非线性相移下,甚至会出现总啁啾减小使谱峰值数目增加的情况。该研究对光开关、光脉冲压缩以及光纤通信系统等领域的深入发展具有一定的指导意义。