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51.
对两种热处理条件不同的TC4钛合金圆筒在内部爆轰加载下的自然破片形成过程作了研究,并对破片的宏观断裂特征和细观断裂机理进行了分析。研究结果表明,一些引燃战斗部采用钛合金壳体的根本原因在于利用壳体破裂时形成的高温绝热剪切带和钛元素本身在高温下的剧烈氧化性。 相似文献
52.
《Current Applied Physics》2015,15(11):1318-1323
The electroreflectance (ER) and current–voltage (J–V) of InAs/InGaAs dots in a well (DWELL) solar cell (SC) were measured to examine the optical and electrical properties. To investigate the carrier capturing and escaping effects in the quantum dot (QD) states the above and below optical biases of the GaAs band gap were used. In the reverse bias region of the J–V curve, the tunneling effect in the QD states was observed at low temperature. The ideality factors (n) were calculated from the J–V curves taken from various optical bias intensities (Iex). The changes in the ideality factor (n) and short circuit current (JSC) were attributed mainly to carrier capture at low temperature, whereas the carrier escaping effect was dominant at room temperature. ER measurements revealed a decrease in the junction electric field (FJ) due to the photovoltaic effect, which was independent of the optical bias source at the same temperature. At low temperature, the reduction of photovoltaic effect could be explained by the enhancement carrier capturing effect due to the strong carrier confinement in QDs. 相似文献
53.
Chemical depth profiling and 3D reconstruction of III–V heterostructures selectively grown on non‐planar Si substrates by MOCVD 下载免费PDF全文
V. Gorbenko M. Veillerot A. Grenier G. Audoit W. Hourani E. Martinez R. Cipro M. Martin S. David X. Bao F. Bassani T. Baron J.‐P. Barnes 《固体物理学:研究快报》2015,9(3):202-205
The chemical characterization of novel 3D architectures with nanometre‐scale dimensions is extremely challenging. The chemical composition of InGaAs/AlAs quantum wells selectively grown in SiO2 trenches, 100–300 nm wide, is studied. Combining high lateral resolution 3D ToF‐SIMS analysis and Auger measurements, the chemical composition of individual trenches was obtained confirming the uniformity of these III–V heterostructures. These results correlate well with an average approach using SIMS depth profiling. The effects of ion beam orientation on the surface topography of confined structures were highlighted. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
54.
U. N. Tripathi Mohd. Safi Ahmad 《Phosphorus, sulfur, and silicon and the related elements》2013,188(11):2307-2313
Triphenylantimony (V) (O-alkyl,O-cycloalkyl and O-aryltrithiophosphates) of the type Ph 3 Sb[S 2 (S)P(OR)] (R = Me, Et, Pr n , Pr i , Bu n , Bu s , Bu i , Am i , Ph and C.h. = cyclohexyl) have been synthesized for the first time by the reaction of triphenylantimony (V) dibromide with potassium trithiophosphates in 1:1 molar ratio in methanol. These new compounds have been characterized by elemental analysis, molecular weight determinations, and spectroscopic (IR,13C and 31P NMR) studies. On the basis of these data trigonal bipyramidal geometry has been proposed for these compounds. 相似文献
55.
56.
Jia-Ming Liu Fei Gao Tian-Long Yang Jian-Hua Lai Zhi-Ming Li 《International journal of environmental analytical chemistry》2013,93(9):613-624
A new catalytic solid substrate-room temperature phosphorimetry (SS-RTP) for the determination of trace arsenic(V) has been established. It is based on the fact that fullerenol (F-ol) emitted strong and stable room temperature phosphorescence (RTP) on nitric acid cellulose membrane (NCM) substrate. H2O2 could oxidise F-ol to cause the quenching of RTP. As(V) could catalyse H2O2 to oxidise F-ol and decrease the RTP signal of F-ol sharply. After adding tween-80 in the system, its ΔI p enhanced 7.7 times compared with the without-tween-80 levels. Under the optimum conditions, the linear dynamic range of this method was 0.016?11.2 ag spot?1 with a detection limit (LD) of 9.3 zg spot?1 (corresponding concentration: 2.3 × 10?17 g mL?1). This sensitive, simple and selective method has been successfully applied to the determination of trace As(V) in human hair and tea samples. The reaction mechanism for SS-RTP is also discussed. 相似文献
57.
This work demonstrates resolution enhancement of a quadrupole mass filter (QMF) under the influence of a static magnetic field. Generally, QMF resolution can be improved by increasing the number of rf cycles an ion experiences when passing through the mass filter. In order to improve the resolution, the dimensions of the QMF or the operating parameters need to be changed. However, geometric modifications to improve performance increase the manufacturing cost and usually the size of the instrument. By applying a magnetic field, a low‐cost, small footprint instrument with reduced power requirements can be realized. Significant improvement in QMF resolution was observed experimentally for certain magnetic field conditions, and these have been explained in terms of our theoretical model developed at the University of Liverpool. This model is capable of accurate simulation of spectra allowing the user to specify different values of mass spectrometer dimensions and applied input signals. The model predicts enhanced instrument resolution R>26 000 for a CO2 and N2 mixture with a 200‐mm long mass filter operating in stability zone 3 via application of an axial magnetic field. Copyright © 2013 John Wiley & Sons, Ltd. 相似文献
58.
A. M. A. Alaghaz 《Phosphorus, sulfur, and silicon and the related elements》2013,188(11):2807-2826
Novel [1,3-di-[N 1 -4-methoxy-1,2,5-thiadiazole-3-yl-sulfanilamide(sulfametrole)]-2″4-bis-[1,3-dithiole-2-thione-4,5-dithiolate]-2′,4′-dichl-orocyclodiphosph(V)azane] (III) , was prepared and their coordinating behavior towards the metal ions Co(II), Ni(II), Cu(II), and Pd(II) was studied. The structures of the isolated products are proposed based on elemental analyses, IR, UV, 1 H, and 31 P NMR, ESR, magnetic susceptibility, molar ratio, conductometric titration and electrical conductivity measurements. The prepared complexes showed high to moderate bactericidal activity compared with the ligand. 相似文献
59.
The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contrast imaging (ECCI) is employed to identify extended defects over large (tens of microns) areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero. 相似文献
60.