Simulation of ultrasound influence on melt convection for the growth of GaxIn1−xSb and Si single crystals by the Czochralski method

The flow simulation for Ga_xIn_1−xSb and Si melts was conducted for quasi-steady conditions. The maximum velocity was under the solid–liquid interface near periphery of the crystals. An introduction of ultrasound into the liquid formed a standing wave channel under the solid–liquid interface, which acted on melt particles. The calculations of convective and ultrasonic forces acting on the particles in the melt showed that the ultrasonic force is much higher than the convective force.     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 μm lasers

Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas source molecular beam epitaxy using a RF-plasma nitrogen radical beam source. The optimal growth condition for the quantum well structure was determined based on room-temperature photoluminescence measurements. Effects of rapid thermal annealing (RTA) on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes are examined. It was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, due to a removal of N induced nonradiative centers from GaInNAs wells.     

AlGaN-based UV photodetectors

Al_xGa_1−xN alloys are very attractive materials for application to ultraviolet photodetection. AlGaN photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes, p–n junction photodetectors and phototransistors have been recently developed. In this work we analyse the performance of AlGaN-based photodetectors, discussing present achievements, and comparing the characteristics of the various photodetector structures developed to date.     

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

We investigated the effect of different annealing atmospheres on contact behaviour of Ni/Au contacts on moderately doped p-GaN layers. We used the annealing gases N₂, O₂, Ar, and forming gas (N₂/H₂) at varying annealing temperatures from 350°C to 650°C in steps of 50°C. The p-GaN samples were either metalorganic chemical vapor deposition or molecular beam epitaxy grown. Contact characterization was done after each annealing step by using the circular transmission line model. Specific contact resistances were determined to be in the low 10⁻⁴ Ω cm² range for oxidized contacts. Accompanying chemical analysis using depth resolved Auger electron spectroscopy revealed that NiO was formed and Au diffused towards the interface, whereas annealing in forming gas prevented oxidation and did not lead to Ohmic behaviour.     

Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

We report on studies of an In_0.12Ga_0.88N/GaN structure with three 35 Å thick quantum wells (QWs) grown by metalorganic vapor phase epitaxy with employment of mass transport. The mass-transport regions demonstrate a threading dislocation density less than 10⁷ cm⁻². The photoluminescence (PL) spectrum is dominated by a 40 meV—narrow line centered at 2.97 eV at 2 K. This emission has a typical PL decay time of about 5 ns at 2 K within the PL contour. An additional line with longer decay time (about 200 ns) is observed at an energy about 2.85 eV. The position of this line shifts towards higher energies with increasing excitation power. The data are consistent with a model, where the PL originates from at least two nonequivalent QWs, which could be realized due to a potential gradient across the layers.     

｛0,1,3｝问题摄动形式所对应的测度

给定实数λ,α以及Ｒ上（以λ,α为参数）的压缩自相似映射Ｓ１（ｘ）＝λｘ, Ｓ２（ｘ）＝ λｘ＋ａ, Ｓ３（ｘ）＝ λｘ＋３,记满足测度方程ｖ＝（１／３）∑ｉ＝１ｖｏＳｉ－１的唯一概率测度为ｕλ,α本文得到：（１）当固定 λ∈Ａ Ｅ（１／３, ２／５）时,则在 Ｌｅｂｅｓｇｕｅ测度意义下,对于 ａ．ｅ．的 ａ∈（０,１）,测度 ｕλ,α绝对连续,且存在平方可积密度．（２）若λ－１是 Ｐ．Ｖ．数,且 α是λ的有理系数多项式,则测度ｕλ,α是奇异测度．     

Theoretical study of the internal rotational barriers in nitrobenzene, 2‐nitrotoluene, 2‐nitrophenol,and 2‐nitroaniline

The molecular geometries and internal rotational barriers of the nitro group of nitrobenzene (NB), 2‐nitrotoluene (2‐NT), 2‐nitroaniline (2‐NA), and 2‐nitrophenol (2‐NP) were calculated by five different types of density functional theory (DFT) methods with three different levels of basis sets. Analysis of the torsional angles of the nitro, methyl, amino, and hydroxyl groups indicate that NB, 2‐NA, and 2‐NP are planar molecules, but 2‐NT is not a planar molecule. Internal rotational barriers of the nitro group were calculated as V₂ barriers, and the NO₂ torsional potentials for each molecule were given. The values of the V₂ barriers depend on the DFT methods and basis sets. The average values of the V₂ barriers for NB, 2‐NT, 2‐NA, and 2‐NP are 6.47 kcal/mol, 3.00 kcal/mol, 10.20 kcal/mol, and 13.26 kcal/mol, respectively. © 2001 John Wiley & Sons, Inc. Int J Quant Chem 83: 332–337, 2001     

细胞色素b5突变体V45H NMR初步研究

通过分析在H2O和D2O中采集,DQF-COSY,TOCSY和NOESY等二维核磁共振波谱鉴定了细胞色素b5定点突变体V45H(残基Val^45突变为His^45)的大多数氨基酸残基的质子自旋系统,通过解析NOESY谱中的dNN(i,i+1),dαN(i,i+1),dαN(i,i+2),dαN(i,i+3),dαβ(i,i+3)和dβN(i,i+1)等NOE相关,完成了其序列特异性归属以及主链和侧链质子共振信号的全归属。突变体V45H的二级结构分析表明残基Val^45突变为His^45对分子的整体折叠影响不大。但是,与野生型细胞色素b5相比较,突变体V45H主链酰胺质子的化学位移指数提示突变使其血红素疏水腔的微环境受到扰动。以上实验结果为进一步测定V45H的溶液结构和分析残基Val^45在蛋白质中的作用提供了基础。     

W6Mo5Cr4V2钢氮离子注入表面改性层的摩擦学性能

对 W6 Mo5 Cr4V2钢进行氮离子注入 ,用销 -盘式摩擦磨损试验机考察了钢表面注入改性层的摩擦磨损性能 ;用扫描电子显微镜、俄歇电子能谱仪及微区 X射线衍射仪等考察了改性层的相组成、氮元素沿注入层深度方向的浓度分布及磨损机理 .结果表明 ,离子注入处理后钢表面显微硬度提高、残余压应力增大、表面粗糙度降、注入层中形成了大量细小弥散分布的硬质析出相ε- Fe2 - 3 N、Cr N及β- Cr2 N等 ,从而改善了材料的摩擦学性能 ,并导致磨损机理发生变化 .正交试验结果表明 ,氮离子注入对 W6 Mo5 Cr4V2钢摩擦学性能的改善程度与注入能量和注入剂量不成正比 ,注入参数存在最佳值 ,最佳注入能量为 10 0 ke V,注入剂量为 4× 10 1 7ions/cm