Electromagnetic characteristics of the CH cavity

In this paper, we present the RF simulation, the fabrication and the normal RF test of a six-cell copper model cross bar H mode (CH) cavity. The CH cavity was researched and developed at the Institute of Modern Physics for Injector II of the superconducting linac of the accelerator driven system of China, operating at a frequency 162.5 MHz, β=0.065. The deep drawing and electron beam welding were employed to fabricate this cavity, which would be used to develop the superconducting CH cavity in the future. The results of the normal RF test agree with the simulation of the electromagnetic properties, such as the electric field distribution on the cavity axis, frequency and Q factor.     

Performance improvement in pentacene organic thin film transistors by inserting a C60 ultrathin layer

The contact effect on the performances of organic thin film transistors is studied here. A C₆₀ ultrathin layer is inserted between Al source--drain electrode and pentacene to reduce the contact resistance. By a 3 nm C₆₀ modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm²/(V·s). It means that inserting a C₆₀ ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm²/(V·s). It indicates that further reducing the contact resistance of OTFTs should be carried out.     

第9届化学传感器国际会议

本届大会于2002年7月7日至10日在美国Boston市召开,由Elsevier科学公司主办。     

Experimental study on SC RF cavities by using China large grain niobium for ILC

Large grain niobium has the potential of simplifying the production sequence and consequently reducing the cost of the superconducting RF cavities for ILC. To investigate the feasibility of fabrication and the possibility to achieve high gradient by large grain cavities, two 1.3GHz cavities were made of China large grain niobium and a series of vertical tests were carried out following several different surfaces treatment procedures. Two cavities have both reached the high gradient of more than 43MV/m repeatedly and the maximum accelerating field of 47.9MV/m has been achieved by China large grain niobium. This paper introduces the features of the fabrication and surface treatments on the large grain cavities and presents the preliminary results of the research.     

Effect of Dopant Properties on the Microstructures and Electrical Characteristics of Poly（3-Hexylthiophene） Thin Films

Effects of dopant properties on microstructures and the electrical characteristics of poly （3-hexylthiophene） （P3HT） films are studied by doping 0.1 wt% 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane （F4？TCNQ）, 6,6-phenyl-C61butyric acid methyl ester （PCBM） and N,N＇？Diphenyl-N,N＇-（m-tolyl）-benzidine （TPD） into P3HT, respectively. The introductions of various dopants in small quantities increase the field-effect mobility and the I on/Ioff ratio of P3HT thin-film transistors. However, each of dopants shows various effects on the crystalline order and the molecular orientation of P3HT films and the performance of P3HT thin-film transistors. These can be attributed to the various size, shape and energy-level properties of the dopants.     

高跨导氢终端多晶金刚石长沟道场效应晶体管特性研究

基于多晶金刚石制作了栅长为4 pm的铝栅氢终端金刚石场效应晶体管.器件的饱和漏源电流为160 mA/mm,导通电阻低达37.85Ω·mm,最大跨导达到32 mS/mm,且跨导高于最大值的90%的栅压(V_(GS))范围达到3 V(-2 V≤V_(GS)≤-5 V).通过传输线电阻分析以及器件的导通电阻和电容-电压特性分析,发现氢终端多晶金刚石栅下沟道中的空穴面浓度达到了1.56×10~(13)cm~(-2),有效迁移率在前述高跨导栅压范围保持在约170 cm~2/(V·s).分析认为,较低的栅源和栅漏串联电阻、沟道中高密度的载流子和在大范围栅压内的高水平迁移率是引起高而宽阔的跨导峰和低导通电阻的原因.     

石墨烯场效应晶体管的X射线总剂量效应

本文针对不同结构、尺寸的石墨烯场效应晶体管(graphene field effect transistors, GFET)开展了基于10 keVX射线的总剂量效应研究.结果表明,随累积剂量的增大,不同结构GFET的狄拉克电压V_Dirac和载流子迁移率μ不断退化;相比于背栅型GFET,顶栅型GFET的辐射损伤更加严重;尺寸对GFET器件的总剂量效应决定于器件结构; 200μm×200μm尺寸的顶栅型GFET损伤最严重,而背栅型GFET是50μm×50μm尺寸的器件损伤最严重.研究表明:对于顶栅型GFET,辐照过程中在栅氧层中形成的氧化物陷阱电荷的积累是V_Dirac和μ降低的主要原因.背栅型GFET不仅受到辐射在栅氧化层中产生的陷阱电荷的影响,还受到石墨烯表面的氧吸附的影响.在此基础上,结合TCAD仿真工具实现了顶栅器件氧化层中辐射产生的氧化物陷阱电荷对器件辐射响应规律的仿真.相关研究结果对于石墨烯器件的抗辐照加固研究具有重大意义.     

2D NMR与分子力学计算研究带RF长链麦芽糖的溶液构象

本文研究带R_F长链的麦芽糖在DMSO中的溶液构象。从一系列NOESY谱算得8对H-H之间的距离。分子力学计算中,根据能量最低原则,算得φ_OC1'OC4角为89.4°,中φ_OC6C5O(及φ_OC6'C5'O角)角为-177.2°时的构象最为稳定,从这一稳定构象读得的相应8对H-H间的距离与NOESY的结果符合。