光双二进制传输系统的性能研究

光双二进制信号的谱宽是传统二进制信号的一半,采用双二进制传输比二进制传输色散限制的中继距离可增加一倍.本文对采用传统光接收机的光双二进制传输系统用MATLAB进行了通信仿真.结果表明:在完全消光条件下,10 Gb/s双二进制信号在常规单模光纤上传输可达160 km,40 Gb/s双二进制信号在非零色散光纤上为30 km,均比二进制增加了一倍;详细考察了消光比对传输的影响,只有消光比大于25 dB时,双二进制相对于二进制传输的优越性才呈现出来.     

扩张代数的recollement

A是任意域k上的有限维代数. 证明了: 若无界导出模范畴D^-(Mod-A) 允许有关于有限维k-代数B和C的无界导出模范畴 D^-(Mod-B) 和D^-(Mod-C) 的对称的recollement 则A的平凡扩张代数T(A)的无界导出模范畴 也允许有如下对称的recollement:     

Time—Resolved Photoluminescence Studies of AlInGaN Alloys

We study the two samples of AlInGaN,i.e.,1-μm Gan grown at 1030℃ on the buffer and followed by a 0.6μm-thick epilayer of AlInGaN under the low pressure of 76 Torr and the AlInGaN layer deposited diectly on the buffer layer without the high-temperature GaN layer,by temperature-dependent photoluminescence(PL) spectroscopy and picosecond time-resolved photoluminescence(TRPL) spectroscopy.The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures,indicating significant disorder in the material.We attribute the disorder to nanoscale quantum dots or discs of high indium concentration.Temperature dependence of dispersive exponent β shows that the stretched exponential decay of the two samples comes from dfferent mechanisms.The different depths of the localization potential account for the difference,which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.     

均匀分层介质中标准矢量波函数的构成

研究了在均匀分层介质中构成标准矢量波函数的必要条件。研究结果表明在均匀分层介质中构成标准矢量波函数一般需遵循Morse-Feshbach判据外，领示矢量只能选取与折射率变化方向一致的那根坐标轴单位矢量。但在某些特定的条件下，对领示矢量的选取条件可以放宽为只需遵循Morse-Feshbach判据即可。     

等径管道的三维重建

由轮廓线重建物体的现有方法，不能准确地恢复原有管道的形状．本文提出了一种等径管道的三维重建方法，能较为准确地恢复原管道的三维结构．     

Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

PROFILE MINIMIZATION PROBLEM FOR MATRICES AND GRAPHS

ＰＲＯＦＩＬＥＭＩＮＩＭＩＺＡＴＩＯＮＰＲＯＢＬＥＭＦＯＲＭＡＴＲＩＣＥＳＡＮＤＧＲＡＰＨＳＬＩＮＹＩＸＵＮ（林詒勋）；ＹＵＡＮＪＩＮＪＩＡＮＧ（原晋江）（ＤｅｐａｒｔｍｅｎｔｏｆＭａｔｈｅｍａｔｉｃｓ，ＺｈｅｎｇｚｈｏｕＵｎｉｖｅｒｓｉｔｙ，Ｚｈｅ...     

BBO晶体拉曼光谱的高温特性研究

ＢＢＯ晶体拉曼光谱的高温特性研究李郁陈凯旋尤静林蒋国昌（上海大学上海２０１８００）洪慧聪路治平仲维卓（中科院上海硅酸盐研究所上海２０００５０）ＨｉｇｈＴｅｍｐｅｒａｔｕｒｅＲａｍａｎＳｔｕｄｙｏｆＢＢＯＣｒｙｓｔａｌＬｉＹｕ，ＣｈｅｎＫａｉｘｕａｎ...     

低通量慢中子对Bi系超导体的辐照效应

本文研究低通量慢中子对Bi系超导体的辐照效应。实验结果表明:(1)Bi系超导体在适量慢中子辐照后,临界电流密度J_c和零电阻温度T_c0都有不同程度提高;(2)低通量慢中子和高通量快中子对Bi系超导体具有相似的辐照效应。 关键词：     

含稀土锰系氧化物的磁性和氧吸附性

比磁化率(x)和顺磁共振谱数据测定表明,含9种不同稀土的复合锰系氧化物Ln_(0.7)Sr_(0.3)MnO_3(Ln=Ce、Pr、Nd、Sm、Gd、Tb、Dy、Ho和Er)均为顺磁性物质,而La_(0.7)Sr_(0.3)MNO_3具有铁磁性。在200℃,80mT外磁场下,上述样品的氧吸附量(M)均有不同程度的提高。将比磁化率(x)~(2/3)与比表面(As)的乘积对氧吸附量变化值(ΔM)作图,得到以f电子数=7为分界的两分组线性图,并对此进行了讨论。