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41.
利用固相反应法合成了层状钙钛矿钴氧化物Y1-xCaxBaCo2O5+δ(x=0,0.1,0.15,0.2)材料,系统研究了材料的氧吸附性能和电输运性质。XRD结果表明Ca2+掺杂的样品具有母相YBaCo2O5+δ层状钙钛矿结构,随着Ca2+掺杂量的增加,样品的晶格参数增大。TG结果显示:从室温到1 273 K,所有样品经历了两次吸氧和脱氧的过程,Ca2+掺杂增强了样品的氧脱附性能。在中低温下,约650 K附近,吸氧量达到最大,同时,样品发生了半导体金属转变。Ca2+掺杂量的增加,半导体金属转变温度增大,电导率下降。半导体金属转变与氧变化量δ有关而电导率下降与Ca2+掺杂引起Co3+离子的增加有关。  相似文献   
42.
Herein, we report a comprehensive study on the lanthanide-directed coordination self-assembly with two bis-tetradentate acylhydrazone ligands H4 L1 and H4 L2 . Multifarious outcomes, which are base- and metal-dependent, were revealed by NMR, ESI-TOF-MS and X-ray crystallography. In the absence of base, bent H4 L1 was assembled into dinuclear double-strand helicate Ln2(H2 L1 )2 by partially-deprotonated assembly with La, Sm or Eu, while trinuclear Ln3(H2 L1 )3 with Yb or Lu. For linear H4 L2 , infinite 1D zig-zag metal-organic polymeric chain (Ln2H2 L2 )n was obtained. However, complete deprotonated L1 and L2 assembled into discrete trinuclear Ln3( L1 / 2 )3 and tetranuclear Ln4( L1 / 2 )4 macrocyclic structures under the basic condition. For these, there are multiple possible isomers coexisting in the solution which were enumerated and simulated with molecular mechanic modeling. Visible-light sensitized NIR emissions on the Yb complexes have been observed, endowing them potential application in photofunctional materials.  相似文献   
43.
We study the transport properties of electrons in a short homogeneous DNA molecule where thermal vibrations and twist fluctuations of the base molecules are considered. The nonlinear current-voltage curves can be derived by using the equivalent single-particle multichannel network. The voltage gap is sensitive to the strength of thermal vibrations and twist fluctuations of the base molecules. Our results are in good agreement with the recent finding of semiconducting behaviour in short poly(G)-poly(C) DNA oligomers. The present method can also be used to calculate the other molecular wires.  相似文献   
44.
张爱梅  吴小山 《物理》2007,36(7):516-523
文章主要介绍了几种X射线散射技术,包括X射线小角反射技术、X射线漫散射技术、掠入射X射线衍射和多晶薄膜的小角衍射技术。通过具体的事例说明这些X射线散射方法在薄膜研究中的应用。  相似文献   
45.
Three new oxidovanadium(V) complexes, [VOLL′] (L = 2-chloro-N′-(3-ethoxy-2hydroxybenzylidene)benzohydrazide, L′ = acetohydroxamate for 1, methylmaltolate for 2, and ethylmaltolate for 3), have been prepared. The complexes have been characterized by physicochemical methods and single-crystal X-ray determination. Vanadium in each complex is coordinated by the NOO donor set of L, the OO donor set of L′, and one oxido, forming octahedral coordination. The complexes were administered intragastrically to both normal and alloxan-diabetic mice for two weeks. The biological activities show that the complexes at doses of 10.0 and 20.0 mg V·kg?1 can significantly decrease the blood glucose level in alloxan-diabetic mice, but the blood glucose level in the treated normal mice was not altered.  相似文献   
46.
Based on computerized symbolic computation, a new method and its algorithm are proposed for searching for exact travelling wave solutions of the nonlinear partial differential equations. Making use of our approach, we investigate the Whitham-Broer-Kaup equation in shallow water and obtain new families of exact solutions, which include soliton-like solutions and periodic solutions. As its special cases, the solutions of classical long wave equations and modified Boussinesq equations can also be found.  相似文献   
47.
采用辉光放电技术和等离子体质谱诊断技术,研究了H2/C4H8混合气体等离子体中正离子成分及主要正离子能量随射频功率的变化规律,并分析了H2/C4H8混合气体主要的离解机理和形成过程.研究表明:随着射频功率的增加,碳氢碎片离子的浓度增加,在20 W时达到最大值,25 W后有所减小.当射频功率小于10 W时,H2/C4H8混合气体等离子体中C4H9+相对浓度最大,当功率大于或等于10 W时,C3H3+相对浓度最大.随着射频功率的增大,碳氢碎片离子的能量逐渐增加.对H2/C4H8混合气体等离子体的组成与能量进行的定性分析,将为H2/C4H8混合气体辉光放电聚合物涂层工艺参数优化提供参考.  相似文献   
48.
用高分辨X射线衍射仪(HRXRD)研究了表面钝化前后Al0.22Ga0.78N/GaN异质结势垒层应变的高温特性,温度变化范围从室温到813K.结果表明,对未钝化的异质结,当测试温度高于523K时,Al0.22Ga0.78N势垒层开始出现应变弛豫;钝化后,在Al0.22Ga0.78N势垒层中会产生一个附加的平面拉伸应变,并随着温度的增加,势垒层中的平面拉伸应变会呈现出一个初始的增加,接着应变将减小,对100nm厚的Al0.22Ga0.78N势垒层,应变只是轻微地减小,但对于50nm厚的Al0.22Ga0.78N势垒层,则出现了严重的应变弛豫现象.  相似文献   
49.
用高分辨X射线衍射仪(HRXRD)研究了表面钝化前后Al0.22Ga0.78N/ GaN异质结势垒层应变的高温特性,温度变化范围从室温到813K.结果表明,对未钝化的异质 结,当测试温度高于523K时,Al0.22Ga0.78N势垒层开始出现应变 弛豫;钝化后,在Al0.22Ga0.78N势垒层中会产生一个附加的平面 拉伸应变,并随着温度的增加,势垒层中的平面拉伸应变会呈现出一个初始的增加,接着应 变将减小,对100nm厚的Al0.22Ga0.78N势垒层,应变只是轻微地减 小,但对于50nm厚的Al0.22Ga0.78N势垒层,则出现了严重的应变 弛豫现象. 关键词: 0.22Ga0.78N/GaN异质结')" href="#">Al0.22Ga0.78N/GaN异质结 应变 3 N4钝化')" href="#">Si3 N4钝化 高温XRD  相似文献   
50.
We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge(00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge–Ge, Ge–Sn,Sn–Sn vibrational modes. The Sn–Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.  相似文献   
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