MgZnO薄膜及其量子阱和超晶格的发光特性

MgO和ZnO形成合金Mg_xZn_1-xO的带隙可以在3.3～7.9eV之间变化,在制备紫外波段光电器件方面有着广阔的应用前景.由ZnO和MgZnO交替沉积而成的ZnO/Mg_xZn_1-xO量子阱和超晶格在激光器、光探测器和其他光电器件方面也有潜在的应用价值.回顾最近几年对MgZnO薄膜材料发光特性的研究进展,介绍在不同衬底上用不同方法制备MgZnO合金薄膜的制备技术、发光特性以及发光特性与薄膜中Mg含量的关系;综述近年来在ZnO/Mg_xZn_1-xO超晶格、量子阱研究上的成果,特别介绍了ZnO/Mg_xZn_1-xO对超晶格、量子阱的发光特性、发光机理以及发光特性与势垒层镁含量、器件温度的关系.     

吡啶-BH~3相互作用复合物的理论研究

对吡啶-BH~3复合物分别用MP2/6-31+G^*和B3LYP/6-31+G^*进行理论计算以预测该复合物的构型及解离能，得到四种构型，在MP2优化构型基础上作CCSD/6-31+G^*单点能量计算以验证MP2与B3LYP结果的可靠性，然后用B3LYP作振动频率分析，计算了各构型的垂直电离势，最后用更大基组作单点能量计算和自然键轨道(NBO)分析。结果表明，N-B直接相连的构型最稳定，其解离能为141.50kJ/mol,MP2和B3LYP对N-H接近的构型结果相关较大，另外两种构型稳定性介于二者之间，解离能分别为15.18kJ/mol,14.06kJ/mol(MP2/6-31+G^*)。     

REPETITIVE CLUSTER-TILTED ALGEBRAS

Let H be a finite-dimensional hereditary algebra over an algebraically closed field k and C F m be the repetitive cluster category of H with m ≥ 1. We investigate the properties of cluster tilting objects in C F m and the structure of repetitive clustertilted algebras. Moreover, we generalize Theorem 4.2 in [12] (Buan A, Marsh R, Reiten I. Cluster-tilted algebra, Trans. Amer. Math. Soc., 359(1)(2007), 323-332.) to the situation of C F m , and prove that the tilting graph KCFm of C F m is connected.     

EXTREMAL SOLUTIONS OF TERMINAL VALUE PROBLEMS FOR NONLINEAR IMPULSIVE INTEGRO-DIFFERENTIAL EQUATIONS IN BANACH SPACES

§１　ＩｎｔｒｏｄｕｃｔｉｏｎａｎｄＰｒｅｌｉｍｉｎａｒｉｅｓＡｓｅａｒｌｙａｓｉｎ１９８１,ＡｆｔａｂｉｚａｄｅｈａｎｄＬａｋｓｈｍｉｋａｎｔｈａｍ［１］ｂｅｇａｎｔｏｉｎｖｅｓｔｉｇａｔｅｔｅｒｍｉｎａｌｖａｌｕｅｐｒｏｂｌｅｍｓ（ＴＶＰｓ,ｉｎｓｈｏｒｔ）ｆｏｒｔｈｅｆｉｒｓｔｏｒｄｅｒｏｒｄｉｎａｒｙｄｉｆｆｅｒｅｎｔｉａｌｅｑｕａｔｉｏｎｓ．Ｈｏｗｅｖ－ｅｒ,ｔｈｅｒｅｓｅａｒｃｈｉｎＴＶＰｓｆｏｒｉｍｐｕｌｓｉｖｅｄｉｆｆｅｒｅｎｔｉａｌｅｑｕａｔｉｏｎｓｈａｓｍａｄｅｌｉｔｔｌｅｐ…     

水平井变质量流研究进展

综述了水平井筒沿管壁具有流体流入的变质量流动的最新研究进展.内容包括:考虑油藏流体流入时井筒流动压力及产量的计算,具有不同流入时管壁摩擦系数的经验计算公式,以及流体径向流入井筒后流动阻力损失产生的机理分析等.重点介绍了水平井筒变质量流动阻力系数的计算,同时文中还介绍了井筒两相变质量流动损失产生的机理和数值模拟研究进展.      

Nd：YAG晶体1．064μm受激发射截面随温度变化特性研究

测量了Nd：YAG晶体从-70℃到 80℃不同温度下的荧光发射光谱和荧光寿命，计算了该晶体在不同温度下1．064μm受激发射截面，首次获得在此温度变化范围内受激发射截面随温度的线性变化关系．     

IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE

The transient behavior of a semiconductor device consists of a Poisson equa-tion for the electric potential and of two nonlinear parabolic equations for the electrondensity and hole density.The electric potential equation is discretized by a mixed finiteelement method. The electron and hole density equations are treated by implicit-explicitmultistep finite element methods. The schemes are very efficient. The optimal order errorestimates both in time and space are derived.     

二元衍射光栅式偏光器件的设计

本文利用双折射晶体刻划成的二元衍射光栅的衍射偏振特性,设计了偏光器件(可分别对o光或e光起偏);偏光分束器件(包括非对称及对称偏振分束两类),并对有关参数对设计的影响进行了讨论.     

几类可升分解的图

Ａｌａｖｉ等人在文献［１］中定义了图的一种新分解，即“升分解”，并且猜想：任意有正数条边的图都可升分解。本文证明了下面三类图可升分解，并得到了一些有意义的推论。１设Ｒｎ是一个至多含有ｎ个顶点和至多含有ｎ条边的图，Ｋｎ－Ｒｎ可升分解（ｎ≥５）；２对称图可升分解；３对称图Ｇ的混合积（Ｇ；ｋ）可升分解。     

Synthesis and Two-photon Absorption Properties of s-Triazine Derivatives

Two new s-triazine derivatives, which belong to linear dipolar type and triangle octupolar type respectively, have been synthesized. The structure of the dipolar compound has been determined by X-ray diffraction. The two-photon absorption cross-section σ, and the two-photon excited fluorescence (TPEF) intensities are increased significantly from dipolar compound to octupolar compound.