电解冷蒸气发生原子荧光法测定痕量汞

以电解冷蒸气发生技术结合原子荧光光谱仪,采用自行设计的圆盘电解池,进行汞的电解还原冷蒸气发生情况的研究.实验表明,铂作为阴极时,Hg的电化学发生响应信号与化学还原法获得的信号强度相当;同时发现,载气引入位置是影响Hg响应信号强度的重要因素.在1.0 mol/L H2SO4作为阴极液及0.8 A的电解电流条件下,Hg的检出限为1.2 ng/L(3σ); 相对标准偏差为1.7%(n=11).利用此体系分析了标准物质及生物样品中的痕量汞,结果满意.     

基于Mueller矩阵椭偏仪的纳米压印模板与光刻胶光栅结构准确测量

在纳米压印工艺中,对模板和压印结构的几何参数进行快速、低成本、非破坏性地准确测量具有非常重要的意义.与传统光谱椭偏仪只能改变波长和入射角2个测量条件并且在每一组测量条件下只能获得振幅比和相位差2个测量参数相比,Mueller矩阵椭偏仪可以改变波长、入射角和方位角3个测量条件,而且在每一组测量条件下都可以获得一个4×4阶Mueller矩阵共16个参数,因此可以获得更为丰富的测量信息.通过选择合适的测量条件配置,充分利用Mueller矩阵中的测量信息,有望实现更为准确的纳米结构测量.基于此,本文利用自主研制的Mueller矩阵椭偏仪对硅基光栅模板和纳米压印光刻胶光栅结构进行了测量.实验结果表明,通过对Mueller矩阵椭偏仪进行测量条件优化配置,并且在光学特性建模时考虑测量过程中出现的退偏效应,可以实现压印工艺中纳米结构线宽、线高、侧壁角以及残胶厚度等几何参数更为准确的测量,同时对于纳米压印光刻胶光栅结构还可以直接得到光斑照射区域内残胶厚度的不均匀性参数.     

Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing. In this work, we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin-orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier. Therefore, the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field. Moreover, we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior. This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.     

An Estimation for the Power-Law Distribution Parameter Based on Entropy

A new estimation based on the Shannon entropy for the power-law distribution parameter is presented, The maximum likelihood estimation （MLE） of the parameter is discussed and the relation between the MLE and the moment estimation of the parameter is given out. It is shown that the minimum Shannon entropy estimation is equivalent to the MLE giving the log expectation.     

应用判别式应注意的几点

应用一元二次方程根的判别式可以确定一元二次方程根的情况,但在具体应用时,同学们因概念模糊,思考不同,没有针对具体问题分析而产生误用、滥用或漏用判别式的错误·因此在应用判别式时要注意以下几点:一、概念模糊,误用判别式·例1已知方程kx2 6x 3=0有两个不等的实数根,求k的     

A waveguide polarizer based on Si-coated Ti:LiNbO_3 planar structure

A novel design of a transverse magnetic (TM)-pass waveguide polarizer based on Si on an X-cut, Y-propagatiou Ti:LiNbO3 planar waveguide is presented. The eigenvalue functions of such structure have been obtained by using Wenzel-Kramers-Brillouin (WKB) method with modified Airy functions. The intervals of the silicon thickness have been found which result in transverse electric (TE) light suffering strong attenuation while TM wave propagating with fairly low loss. A planar waveguide polarizer is fabricated and its polarization-dependent measurements lead to the best polarization extinction ratio ~ 34 dB and the insertion loss < 0.4 dB.     

修饰硅胶表面印迹牛血红蛋白及其识别性能的研究

本文选用马来酸酐修饰后的硅胶作为载体,丙烯酰胺为功能单体,N,N’-亚甲基双丙烯酰胺为交联剂,牛血红蛋白为模板分子,采用氧化还原悬浮聚合法,合成了具有选择性识别的牛血红蛋白分子印迹聚合物。并用红外光谱(IR)、扫描电子显微镜(SEM)对聚合物进行了表征,结果表明载体表面成功接枝了分子印迹聚合物薄层。同时,选择性吸附实验表明分子印迹聚合物的具有良好的识别性能,能成功的实现水溶液中牛血红蛋白的富集。     

超大孔聚合物亲和色谱层析介质的制备及评价

探索了用席夫碱法在超大孔聚合物微球表面偶联Protein A配基制备亲和层析介质的方法,以亲水化后的聚丙烯酸酯类超大孔微球为基质,考察了氧化剂浓度(H5IO6)对配基偶联量的影响,以扫描电子显微镜表征微球表面形貌,结果发现其偶联Protein A后微球仍能够保持其大孔结构。考察了该类亲和介质在不同操作流速(361~3 600 cm/h)下的动态载量,在3 600 cm/h操作流速下,人抗体载量与361 cm/h相比仅下降10%左右,表明该类介质适合抗体大分子的快速传质,能够满足快速、高效、高通量分离纯化的需求。     

最小偏向角法测三棱镜折射率的相图探究

三棱镜折射率的测量是大学物理实验的重要组成部分,对培养学生的基本实验技能、加深对经典光学理论的理解具有重要作用。本文依据几何光学原理探究了最小偏向角法中在有出射光时最小偏向角与三棱镜顶角、折射率所对应的函数关系,建立了有出射光时入射角、折射率、顶角间以及最小偏向角时折射率、顶角、最小偏向角间的相图,阐明了两相图的物理意义。该研究拓展了三棱镜折射率实验的研究思路。