《毛细管电色谱理论基础》

毛细管电色谱作为一种新型微分离分析技术,其分离过程具有多种机理协同作用的特征。对于毛细管电色谱的理论研究不仅要考虑系统的电属性,还要兼顾溶质的两相分配特征。该书系统地阐述了毛细管电色谱的基本理论,讨论了分离过程中影响峰展宽的因素及其规律。基于作者发展的弛豫理     

Structural and Electrical Characteristics of Pb（Zr0.53,Ti0.47）O3 Thin Films Deposited on Si （100） Substrates

Pb(Zr0.53, Ti0.47)O3 (PZT) films were directly deposited on Si substrates without a buffer layer by pulsed laser deposition. Only(110)-oriented PZT peaks (other than Si substrate peaks) were observed from the XRD data. The electrical properties of the PZT/Si capacitor were characterized in terms of both the capacitance versus voltage (C-V) and current versus voltage (I-V) measurements. The clockwise trace of the C-V curve shows ferroelectric polarization switching, as is expected. From the I-V curves, the Schottky emission and spacecharge-limited-current behaviour are found to be the mainly leakage current mechanism in a certain electric field range in the negative and positive bias, respectively.     

一类图的特征多项式与匹配多项式

本文对一类具有对称轴的图A_n(n≥0),得到了它的特征多项式及匹配多项式的精确表达式;同时还得到A_(?)的完美匹配数。     

Structural Characteristics of Liquid Sn

We investigate the structural properties of liquid Sn. With the help of the internal friction (tanФ) method, it is found that a peak appears in the tan Ф - T curve, suggesting that an anomalous discontinuous temperatureinduced structure change may take place in liquid Sn. From the experimental data of pair distribution functions, we calculate the viscosity η and the excess entropy S and it is found that there are a peak of viscosity in the η-T curve and a bend of excess entropy in the S - T curve, which give a positive support to the appearance of the internal-friction peak in the tan Ф- T curve.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

CL-18的合成

CL-18是根据TATB和BTF两种化合物的分子结构特征所设计并已合成的，其分子兼具TATB和BTF的分子特征，一方面，氨基的推电子效应使C-NO2键能增强，又由于氨基与硝基的氧原子间形成强的分子内和分子间氢键，更增强了分子的稳定性，因而具有优良的热稳定性和较低的感度。另一方面，分子中引入氧化呋咱基团，可明显提高化合物的密度和爆轰性能。在钝感冲击片雷管和钝感传爆药中具有潜在的应用前景。     

介孔网络电路

用二次阳极氧化法制备纳米多孔氧化铝板,然后用磁控溅射方式在纳米多孔氧化铝板表面镀金得到介孔网络电路,对该介孔网络电路进行输运测量,发现其具有非线性电阻.     

类铍离子低激发态等电子系列的能量、精细结构和超精细结构

采用多组态相互作用方法及Rayleigh-Ritz 变分方法，并考虑相对论修正和质量极化效应，获得了类铍离子等电子系列（Z=4-10）低激发态1s²2p2p ¹D^e和1s²2p3p ³P^e的相对论能量。同时还计算了精细结构和超精细结构。计算结果与其他理论和实验符合的很好。     

非晶金刚石膜的性能及其应用

非品金刚石薄膜具有超高硬度等一系列优异的特殊性能，为工程界孜孜追求的材料表面镀膜。用百纳科技公司研发制造的过滤阴极真空电弧离子镀膜机镀制的非晶金刚石薄膜，SP^3金刚石结构量≥80％，硬度高，膜／基结合力高，摩擦系数小，耐磨损，耐腐蚀，透光率高，在电子，机械，光学，生物医学上有广泛应用前景。我们已在视窗玻璃，丝锥，模具，硬质合金刀头等产品上成功应用。     

Quasielastic Scattering of the Halo Nucleus ^6He at 25 MeV／u from a ^9Be Target

The differential cross sections of quasielastic scattering of a 25 MeV/u ^6He from ^9Be target have been measured.The double-folding model approach is applied to generate the real part of the optical potential. The imaginary potential parameters as well as some of the real potential parameters are studied in comparison with the experimental data. The effect of the unstable nucleus is discussed.