纤维素热解过程中活性纤维素的生成研究

热重分析发现活性纤维素的生成始于530 K左右,对应于失重图上的肩部及SDTA曲线中强烈的放热峰.在辐射加热闪速热裂解试验台上获取了一种可溶于水、高温下易分解、室温下呈固态且稳定存在的黄色中间产物.扫描电镜图片证明在热裂解初期纤维素经历了一个熔化和相互粘结的状态,产物的红外谱图证实了大量的羰基和羧基官能团的生成.高效液相色谱分析证明其主要成分是一系列聚合度不同的低聚糖,推断该低聚糖即为活性纤维素.     

30MeV/u 40Ar+115In反应中的IMF能谱

测量了30MeV/u ⁴⁰Ar束流轰击¹¹⁵In反应靶时出射的中等质量碎片(IMF)的能谱.通过比较在不同出射角度发射的同一种IMF的能谱,得到了IMF的发射机制随出射角的演化关系.在假定运动源速度和出射离子库仑位垒不随出射角变化的条件下,通过改变发射源的强度和核温度参量完成了对实验测得能谱的运动源拟合,并详细讨论了3个发射源所占份额和源强随出射角的演化关系.     

27Al+27Al耗散产物反应时间的提取

用发展了的Ericson统计理论,从²⁷Al+²⁷Al碰撞的耗散产物的激发函数提取了反应的相互作用时间约4.3×10^－21s.     

烷基季铵盐插层剂的合成及应用

Three novel intercalation agents were synthesized for the first time, which arose from oleic acid diethylenetriamine or triethylenetetramine 3 - chloro - 2 - hydroxypropy trimethylammonium choride (CHPTA) and chloroethanol. Organophilic vermicullites were synthesized from sodium type vermiculite by cation exchange with new intercalation agents. The results of X - ray diffraction study showed that the gallery distance of the organophilic vermiculite was enlarged from 1 nm to 5 nm or more. A new idea of making design for intercalation agent was provided.     

SEDIMENTO-DYNAMIC CHARACTERISTICS OF THE HUANGHE (YELLOW) RIVER SUBAQUEOUS DELTA

The runoff of the Huanghe contains a great amount of suspended load and forms the high-density underflows (hyperpycnal currents) at the river mouth. The sediments over the subaqneous delta are mainly transported by the underflow. The sediment texture gradually get fining seawards, which relates to the attenuation of the hyperpycnal currents and hypopycnal plumes. Being hydraulically equivalent to the medlum-silt-sized quartz, which is the dominant component in the sediments, the clastic mica concentrates on the delta. The maximum thickness of the subaqueous delta is about 16m and the period of accumulation lasted from 12 to 16 years, therefore its sedimentary rate ranges from 110 to 130 cm/a.     

First-Principles Calculations of Electronic Structures of New Ⅲ-Ⅴ Semiconductors： BxGa1-xAs and TlxGa1-xAs alloys

We investigate the electronic structures of new semiconductor alloys BxGa1-xAs and TlxGa1-xAs, employing first-principles calculations within the density-functional theory and the generalized gradient approximation. The calculation results indicate that alloying a small TI content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and TI stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-xAs with TI concentration of at least 8% is possible.     

湖南砂矿金刚石中石墨包裹体拉曼光谱原位测定：形成条件及成因指示

石墨是天然金刚石中最常见的包裹体之一,按其形成顺序可分为原生、同生、次生,原生/同生与次生石墨包裹体的存在指示了金刚石形成的环境及形成后可能经历的变化。对湖南沅水流域产出的13粒宝石级-半宝石级砂矿金刚石中的原生/同生石墨包裹体及次生石墨包裹体进行显微激光拉曼光谱的原位测试。测试显示,湖南沅水流域金刚石中原生/同生石墨包裹体与次生石墨包裹体的G带与D带拉曼位移均存在漂移,其中原生/同生石墨包裹体G带的漂移范围为1 591～1 600 cm-1,次生石墨的漂移范围为1 575～1 588 cm-1,显示其形成压力较低,结晶压力变化范围大。原生/同生石墨漂移程度估算出该区域压力范围为4.01～5.88 GPa,估算结果与利用橄榄石包裹体拉曼位移估算的源区压力范围基本一致。该区域内金刚石中原生/同生石墨包裹体的D带拉曼位移在1 350～1 368 cm-1之间,D带与G带的强度比(I_D/I_G值)值位于0.36～0.82之间,具有较低有序度结构/结晶程度与橄榄岩型金刚石的高结晶度石墨明显不同指示该区域部分砂矿来源的金刚石的形成深度较浅,成因与榴辉岩关系更为密切,形成过程极可能曾位于石墨-金刚石稳定域附近。研究结果表明,金刚石石墨包裹体拉曼位移的漂移程度可成为探索金刚石原生源区形成环境的有效方法之一。     

Quadratic nonlinear response to 1.56-μm continuous wave laser in semi-insulating GaAs

The nonlinear photoresponse to a 1.56μm infrared continuous wave laser in semi-insulating （SI） galliu- marsenide （GaAs） is examined. The double-frequency absorption （DFA） is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the Dhotocurrent and dark current     

浊点萃取-紫外可见分光光度法测定痕量金

建立了以四甲基联苯胺(TMB)为络合剂,非离子表面活性剂Triton-114为萃取剂的浊点萃取-紫外可见分光光度法测定痕量金的方法。考察了溶液的pH、络合剂和表面活性剂浓度、平衡温度和时间等条件对浊点萃取的影响。在最优条件下,该方法对金的富集倍数为12倍,线性范围为0～0.5μg/mL,检出限(3σ)为8.6ng/mL,相对标准偏差RSD为2.3%～3.6%(n=6),回收率在97%～102%之间。方法已用于工业废水中痕量金的测定。