缝合式C/SiC复合材料非线性本构关系及断裂行为研究

C/SiC复合材料具有高比强度、高比模量和优良的热稳定性能等一系列优点, 广泛应用于航空航天领域中. 裂纹扩展进而引起的脆性断裂是其主要失效形式之一, 因而材料的断裂性能分析对材料的结构设计和应用有重要的指导意义. 本文开展了缝合式C/SiC复合材料简单力学试验和断裂试验, 研究了材料在不同载荷下的力学响应及断裂特征. 基于缝合式C/SiC复合材料简单力学试验, 建立了材料宏观非线性损伤本构方程, 并模拟了缝合式C/SiC复合材料单边切口梁和双悬臂梁的断裂行为. 本构方程采用简单函数描述了材料在复杂应力状态下的非线性应力-应变曲线, 并考虑了反向加载过程中造成的裂纹闭合. 基于商业有限元软件ABAQUS, 通过编写UMAT子程序实现非线性损伤本构方程, 采用单个单元验证了建立的本构方程的有效性. 在此基础上, 采用线弹性损伤本构和非线性损伤本构分别模拟了缝合式C/SiC复合材料单边切口梁和双悬臂梁的断裂行为. 采用非线性损伤本构方程模拟的力-位移曲线结果与试验结果更为吻合, 非线性损伤本构预测的失效载荷与试验失效载荷更为接近, 验证了所建立的非线性损伤本构方程的准确性, 为C/SiC复合材料断裂行为的研究提供了借鉴, 为缝合式C/SiC复合材料结构的设计和应用提供了理论基础.      

Cu2O/TiO2-Bi2WO6三元复合催化剂的制备及光催化性能研究

采用水热法制备花状Bi2 WO6,并利用超声分散法制备了Cu2 O/TiO2-Bi2 WO6复合光催化剂,通过FESEM、XRD、XPS、FI-IR、UV-vis DRS和PL对光催化剂进行了分析和表征.表征结果证明:花状Bi2 WO6表面负载着碎片状的TiO2和立方体Cu2 O形成Cu2 O/TiO2-Bi2 WO6复合光催化剂;以短链脂肪酸(SCFAs)为牺牲剂,考察复合光催化剂的光催化产生氢气和烷烃的性能.实验结果表明:Cu2 O/TiO2-Bi2 WO6复合光催化剂以乙酸为牺牲剂,主要产氢气和甲烷,降解率高达91.82;;以丙酸为牺牲剂,产物主要是乙烷和丁烷,降解率高达90.70;;以丁酸为牺牲剂,除了氢气,甲烷,乙烷,丙烷,丁烷外,气体产物还含有一定量的戊烷,其降解率高达91.50;.结合反应液中间产物的成分进行检测,由此推断出光催化反应的可能机理.     

Active sites engineering of Pt/CNT oxygen reduction catalysts by atomic layer deposition

Understanding carbon-supported Pt-catalyzed oxygen reduction reaction(ORR)from the perspective of the active sites is of fundamental and practical importance.In this study,three differently sized carbon nanotube-supported Pt nanoparticles(Pt/CNT)are prepared by both atomic layer deposition(ALD)and impregnation methods.The performances of the catalysts toward the ORR in acidic media are comparatively studied to probe the effects of the sizes of the Pt nanoparticles together with their distributions,electronic properties,and local environments.The ALD-Pt/CNT catalysts show much higher ORR activity and selectivity than the impregnation-Pt/CNT catalysts.This outstanding ORR performance is ascribed to the well-controlled Pt particle sizes and distributions,desirable Pt^04f binding energy,and the Cl-free Pt surfaces based on the electrocatalytic measurements,catalyst characterizations,and model calculations.The insights reported here could guide the rational design and fine-tuning of carbon-supported Pt catalysts for the ORR.     

基于拉曼热测量技术的铜基复合物法兰GaN基晶体管的热阻分析

采用拉曼热测量技术结合有限元热仿真模型,分析比较新型铜/石墨复合物法兰封装与传统铜钼法兰封装的GaN器件的结温与热阻,发现前者的整体热阻比铜钼法兰器件的整体热阻低18.7%,器件内部各层材料的温度分布显示铜/石墨复合物法兰在器件中的热阻占比相比铜钼法兰在器件中的热阻占比低13%,这证明使用高热导率铜/石墨复合物法兰封装提高GaN器件热扩散性能的有效性.通过对两种GaN器件热阻占比的测量与分析,发现除了封装法兰以外,热阻占比最高的是GaN外延与衬底材料之间的界面热阻,降低界面热阻是进一步提高器件热性能的关键.同时,详细阐述了使用拉曼光热技术测量GaN器件结温和热阻的原理和过程,展示了拉曼光热技术作为一种GaN器件热特性表征方法的有效性.     

L-fuzzy层双保序算子空间中的(ω_α,υ_α)-仿紧性

首先在层双保序算子空间中引进了两种(ω_α,υ_α)-仿紧性,证明了它们都是好的推广.其次,给出了它们的若干刻画与性质,并指出了它们保持若干拓扑不变性质.最后,讨论了(ω_α,υ_α)-仿紧性、(ω_α,υ_α)-分离性以及(ω_α,υ_α)-紧性之间的关系.     

N-doped porous carbon nanofibers sheathed pumpkin-like Si/C composites as free-standing anodes for lithium-ion batteries

Dramatic capacity fading and poor rate performance are two main obstacles that severely hamper the widespread application of the Si anode owing to its large volume variation during cycling and low intrinsic electrical conductivity.To mitigate these issues,free-standing N-doped porous carbon nanofibers sheathed pumpkin-like Si/C composites(Si/C-ZIF-8/CNFs)are designed and synthesized by electrospinning and carbonization methods,which present greatly enhanced electrochemical properties for lithium-ion battery anodes.This particular structure alleviates the volume variation,promotes the formation of stable solid electrolyte interphase(SEI)film,and improves the electrical conductivity.As a result,the as-obtained free-standing Si/C-ZIF-8/CNFs electrode delivers a high reversible capacity of 945.5 mAh g^-1 at 0.2 A g^-1 with a capacity retention of 64% for 150 cycles,and exhibits a reversible capacity of 538.6 mA h g^-1 at 0.5 A g^-1 over 500 cycles.Moreover,the full cell composed of a freestanding Si/C-ZIF-8/CNFs anode and commercial LiNi_1/3Co_1/3Mn_1/3O₂(NCM)cathode shows a capacity of 63.4 mA h g^-1 after 100 cycles at 0.2 C,which corresponds to a capacity retention of 60%.This rational design could provide a new path for the development of high-performance Si-based anodes.     

甲烷浓度对碳化硅基底金刚石薄膜摩擦性能影响

利用热丝化学气相沉积法(HFCVD)在碳化硅基底上制备金刚石薄膜,采用场发射扫描电子显微镜、拉曼光谱仪、原子力显微镜研究了在不同甲烷浓度条件下制备的金刚石薄膜表面形貌及物相组成,在干摩擦条件下通过往复式摩擦磨损实验测试并计算了已制备金刚石薄膜的摩擦系数和磨损率,结合物相分析及摩擦磨损实验结果分析了甲烷浓度的改变对金刚石薄膜摩擦磨损性能的影响。结果表明,由于甲烷气体含量的升高,金刚石薄膜结晶质量下降,薄膜由微米晶向纳米晶转变。摩擦磨损实验结果显示:3%甲烷浓度条件下制备的金刚石薄膜耐磨性较好,磨损率为2.2×10^-7 mm³/mN;5%甲烷浓度条件下制备的金刚石薄膜摩擦系数最低(0.032),磨损率为5.7×10^-7 mm³/mN,制备的金刚石薄膜的耐磨损性能相比于碳化硅基底(磨损率为9.89×10^-5 mm³/mN)提升了两个数量级,显著提高了碳化硅基底的耐磨性。     

n-In0.35Ga0.65N/p-Si异质结的制备及其电学性能研究

采用双光路双靶材脉冲激光沉积(PLD)系统在p-Si衬底上外延生长InGaN薄膜,研究了InGaN薄膜的显微组织结构和n-InGaN/p-Si异质结的电学性能。研究表明,InGaN薄膜为单晶结构,沿[0001]方向择优生长,薄膜表面光滑致密,In的原子含量为35%。霍尔(Hall)效应测试表明In_0.35Ga_0.65N薄膜呈n型半导体特性,具有高的载流子浓度和迁移率及低的电阻率。I-V曲线分析表明In_0.35Ga_0.65N/p-Si异质结具有良好的整流特性,在±4 V时的整流比为25,开路电压为1.32 V。In_0.35Ga_0.65N/p-Si异质结中存在热辅助载流子隧穿和复合隧穿两种电流传输机制。经拟合,得到异质结的反向饱和电流为1.05×10^-8 A,势垒高度为0.86 eV,理想因子为6.87。