二进小波的构造方法研究

提出两种二进小波的构造方法.首先,将Mallat构造的B-样条二进小波推广得到一种构造B-样条二进小波的新方法;其次,基于二进提升方案提出构造二进小波的另一种新方法—–构造定理,并通过调整定理中提升参数的形式、以新的B-样条二进小波作为初始二进小波,具体构造了具有有限长单位脉冲响应、高阶消失矩、线性相位的提升二进小波,这些提升二进小波不能由Sweldens提升方案得到.     

一种新的集中因子

介绍一种新的用于计算函数跳跃值的集中因子.文中得到的结果与经典的Lukács定理以及A.Gelb和E.Tadmor所得的一些结果有关.     

PED沉积La-Sr-Cu-O薄膜表面的有序纳米结构

采用脉冲电子束沉积(PED)技术在Si(100)衬底上生长La_Sr_Cu_O薄膜，在750℃生长温度下获得具有有序纳米结构的表面形貌.采用聚集离子束(FIB)技术对获得的纳米结构进行表征，结果表明，这种有序的纳米结构是由于Si衬底和La_Sr_Cu_O薄膜之间的热膨胀系数和晶格的 失配引起的纳米裂纹.在这些纳米裂纹处，La_Sr_Cu_O成核生长获得独立的纳米线.通过控制 这种有序的纳米结构的生长，这种有序的纳米结构可以用来构造弱连接形成的器件. 关键词： 脉冲电子束沉积 La_Sr_Cu_O薄膜 纳米结构     

A GaAs planar Schottky varactor diode for left-handed nonlinear transmission line applications

The left-handed nonlinear transmission line(LH-NLTL) based on monolithic microwave integrated circuit(MMIC) technology possesses significant advantages such as wide frequency band,high operating frequency,high conversion efficiency,and applications in millimeter and submillimeter wave frequency multiplier.The planar Schottky varactor diode(PSVD) is a major limitation to the performance of the LH-NLTL frequency multiplier as a nonlinear component.The design and the fabrication of the diode for such an application are presented.An accurate large-signal model of the diode is proposed.A 16 GHz-39.6 GHz LH-NLTL frequency doubler using our large-signal model is reported for the first time.The measured maximum output powers of the 2nd harmonic are up to 8 dBm at 26.4 GHz,and above 0 dBm from 16 GHz to 39.6 GHz when the input power is 20 dBm.The application of the LH-NLTL frequency doubler furthermore validates the accuracy of the large-signal model of the PSVD.     

Design and manufacture of planar GaAs Gunn diode for millimeter wave application

GaAs-based planar Gunn diodes with AlGaAs hot electron injector have been successfully developed to be used as a local oscillator of 76 GHz in monolithic millimeter-wave integrated circuits.We designed two kinds of structure diode,one has a fixed distance between the anode and cathode,but has variational cathode area,the other has a fixed cathode area,but has different distances between two electrodes.The fabrication of Gunn diode is performed in accordance with the order of operations:cathode defining,mesa etching,anode defining,isolation,passivation,via hole and electroplating.A peak current density of 29.5 kA/cm 2 is obtained.And the characteristics of negative differential resistance and the asymmetry of the current-voltage curve due to the AlGaAs hot electron injector are discussed in detail.It is demonstrated that the smaller size of active area corresponds to the smaller current,and the shorter distance between anode and cathode also corresponds to the lower threshold voltage and higher peak current,and hot electron injector can effectively enhance the radio frequency conversion efficiency and output power.