高压处理对Bi1Sr1Ca1Cu2Oy超导电性的影响

本文在高T_c超导体Bi_1Sr_1Ca_1Cu_2O_y常压制备的基础上,研究了热压烧结和冷压处理对其形成、结构及超导电性的影响,并与常压结果进行了比较。结果表明,高压可以使样品的合成时间缩短,合成温度降低。但同时它也抑制了晶格参数较大的相(高T_c相)的形成,使小晶格参数的杂相含量增多。对于提高样品的超导电性而言,1.5 GPa是一个较好的压力点。     

Synthesis and surface reactivity of phosphide nanocrystals

Gap and InP nanocrystals were synthesized from Na₃P and GaCI₃ at low temperature (80–100°C) and atmospheric pressure. The samples were characterized by XRD and TEM measurements. The surface reactivity of Gap nanocrystals was studied by heating in N₂. The weight of the nanocrystals increased at the temperature between 370°C and 480°C. It can be concluded that N, molecule was absorbed and reactivated on the surface of Gap nanocrystals. Keywords: gallium phosphide, indium phosphide, nanocrystal, surface reactivity.     

InP-to-InGaAs interfacial strain grown by using tertiarybutylarsine and tertiarybutylphosphine

Lattice-matched InGaAs/lnP heterostructures have been grown by using metalorganic vapor phase epitaxy (MOVPE) with tertiarybutylarsine (TBAs), tertiarybutylphosphine (TBP) as the group V sources. The results of X-ray diffraction on InGaAs/lnP single herterostructure show that there is a compressive-strained interfacial layer at the InP-to-InGaAs interface. X-ray diffraction of InGaAs/ InP superlattices is successfully simulated by using the same interfacial layer. TBAs purging of InP surface has a significant influence on the interfacial strain. A novel gas switching sequence, which switches group III to the run line earlier than TBAs, is proposed to reduce this interfacial strain. As a result, the average compressive strain of superlattices decreases, and a blue shift of photoluminescence ( PL) peak energy and narrowing in PL width are obtained.     

Na_（1．0）Zn_（1．62）Si_（1．38）O_（4．84）·0．6H_

Ｎａ_（１．０）Ｚｎ_（１．６２）Ｓｉ_（１．３８）Ｏ_（４．８４）·０．６Ｈ_２Ｏ的水热合成及离子导电性质崔得良，傅戈妍，庞广生，徐秀廷，冯守华，徐如人（吉林大学无机水热合成开放研究实验室，长春，１３００２３，内蒙古民族师范学院化学系）关键词水热合成，...     

共溶剂对ZnO多孔纳米块体孔径均匀性的影响

以十二烷基硫酸钠(SDS)的水溶液为造孔剂,用溶剂热压方法制备了大孔径的ZnO多孔纳米块体,并进一步考察了添加聚乙二醇400(PEG-400)对样品中孔道的影响. 实验发现,向十二烷基硫酸钠(SDS)的水溶液中加入聚乙二醇400组成共溶剂后, 制备的ZnO多孔纳米块体的孔径大幅度减小,比表面积和孔隙率也明显降低,但孔径的均匀性显著提高.     

反应时间对GaP纳米材料粒度的影响

以GaCl3和Na3P为原料,利用苯热合成方法,在相同的温度、不同的反应时间下制备GaP纳米粒子。由分散在苯中的GaP纳米粒子的吸收光谱和透射电子显微镜测试结果可知,反应时间延长时GaP苯溶液的光吸收谱发生明显的蓝移。本文分析了出现这一现象的原因,并从实验上进行了验证。     

自发团聚诱导高比例立方氮化硼微晶的水热合成

利用水热法合成了立方氮化硼（cBN）. 通常水热法制备的氮化硼样品是立方氮化硼（cBN）和六方氮化硼（hBN）及其它晶相的混合物,这限制了该方法的应用前景. 文中利用立方氮化硼在特定反应条件下的自发团聚现象,成功地发展了一种使混合物中的立方氮化硼在反应过程中自发纯化的新方法. 提高原料浓度和反应温度,有利于获得更大粒径的立方氮化硼和尺寸分布更均匀的团聚颗粒,提高搅拌转速来改善溶液的均匀性也有同样效果;而提高反应压力则会导致相反的结果. 文中也探讨了自团聚现象在生长大尺寸立方氮化硼晶体以及非均相合成中的潜在应用价值.     

溶剂热合成氮化硼纳米晶过程中氮源种类的影响

以NaNH2和BC l3为原料,利用溶剂热方法合成了六方氮化硼纳米微晶,并用红外吸收光谱(FTIR)、X射线粉末衍射(XRD)方法分析了微粒的结构,利用透射电子显微镜(TEM)观测了BN微粒的粒度和微观形貌。与早期用L i3N为氮源合成的氮化硼(产物中具有较多纳米棒)相比,本文中制备的氮化硼纳米晶主要呈球形,颗粒粒度明显增大,而且产率有较大幅度的提高。     

Na5YSi4O12的离子交换性质研究

用溶液电化学方法及固态电极方法研究了Ｎａ５ＹＳｉ４Ｏ１２（ＮＹＳ）与Ｋ＾＋和Ａｇ＾＋的离子交换性质，对离子交换后得到的ＫＮＹＳ和ＡｇＮＹＳ样品的结构、密度和离子导电性质进行了表征。与其它离子交换方法相比，上述方法可获得较高的离子交换度，而且元素分析结果与密度测试结果符合良好。     

磷化镓纳米粒子的固氮

Under mild ambient conditions gallium phosphide （GAP） nanoparticles were employed to carry out the reduction of nitrogen. By using Nessler＇s reagent ammonia was detected in the slurry where the aggregated GAP particles were suspended in water and bubbled by pure nitrogen. Dependence of the concentration of ammonia upon bubbring time, velocity of the flow of nitrogen, and dosage of GAP particles was investigated. In comparison with the original GAP nanoparticles, the Raman scattering of the GAP particles undergoing the process of nitrogen fixation reveals that two sharp lines at 138 and 182 cm^-1, respectively, emerged from the broad continuum around 100-200 cm^-1. These two lines might be assigned to the translational motions of ammonia adsorbed on the surface of the GAP particles. An assessment of the infrared spectra of the two GAP particles led to the conclusion that the environment of the two H2O molecules was not identical. Analysis of the electron spin resonance results showed that the structure defect, gallium self-interstitial, was not involved in the nitrogen fixation of the GAP nanoparticles.