杭州市区主要河道水质评价及评价方法的选择

以杭州市7条主要河道21个监测断面1循环年的水质监测数据为依据,运用污染指数法和模糊评价法对市区主要河道水质进行综合评价,同时探讨2种水质评价方法的评价效果.结果表明：①杭州市区主要河道均存在不同程度的污染,主要污染物是TN、NH+4-N和TP,即氮磷营养盐,而有机污染相对较小;②污染指数法评价结果与实际水体的标准差距较小,与真实情况吻合较好;③当水质为劣V类时,模糊评价结论偏保守,而当某项指标严重超标时则易使评价结果偏重;④污染指数法更适合杭州市区河道水环境的评价.     

高择优取向铌酸锶钡薄膜的射频磁控溅射制备

采用溶胶-凝胶法在(100)Si单晶上预先制备出掺钾(K)的铌酸锶钡(SBN)缓冲层,利用射频磁控溅射法在缓冲层KSBN上沉积出高择优取向的铌酸锶钡薄膜,获得了磁控溅射法制备择优取向铌酸锶钡薄膜的相关工艺参数,研究发现,KSBN缓冲层能够很有效地克服衬底与SBN薄膜之间较大的晶格失配,在氧气氩气的比例为1∶2,工作气压为10 Pa,溅射功率300 W,衬底温度300℃,退火温度为800℃的工艺条件下,能够获得c轴高度择优取向的铌酸锶钡铁电薄膜.利用X射线衍射仪,原子力显微镜等仪器分析了薄膜 关键词： 磁控溅射 高择优取向 p-n结效应     

确定薄膜厚度和光学常数的一种新方法

借助于不同的色散公式,运用改进的单纯形法拟合分光光度计测得的透过率光谱曲线,来获得薄膜的光学常数和厚度。用科契公式分别对电子束蒸发的TiO2和反应磁控溅射的Si3N4,以及用德鲁特公式对电子束蒸发制备的ITO薄膜进行了测试,结果表明测得的光学常数和厚度,与已知的光学常数以及台阶仪测得的结果具有很好的一致性。这种方法不仅简便,而且不需要输入任何初始值,具有全局优化的能力,对厚度较薄的薄膜也可行。采用不同的色散公式可以获得各种不同薄膜的光学常数和厚度,这在光学薄膜、微电子和微光机电系统中具有实际的应用价值。     

提高AB_5型贮氢电极合金低温电化学性能研究

采用优化稀土成分并添加适量的硼改善AB5型贮氢合金的低温性能 .实验表明 ,含富Ce稀土及添加适量硼的AB5型合金 ,其低温电化学性能优良 ,能满足Ni/MH电池在低至 - 35℃小倍率电流密度放电的要求 .贮氢合金低温性能的改善与合金的微结构、热力学和动力学性能相一致     

阻隔型聚对亚苯乙炔电致发光特性研究

报道了一种新的阻隔型聚对亚苯基乙炔的合成与电致发光特性,在聚对亚苯基乙炔主链引入已基碳链,可阻隔聚对亚苯基乙炔的有效共轭长度,改变发光颜色,合成的模型小分子可证明这一点,利用X射线衍射研究了退火前后阻隔型聚对亚苯基乙炔薄膜的晶态变化,研究了电致发光器件ITO/PPE2/Al的电致发光特征。     

聚合物MO-PPV薄膜光致发光特性研究

研究了新型PPV衍生物聚对(2－甲氧基－5－辛氧基)苯撑乙烯, （Poly［(2-methoxy,5-octoxy)1,4-phenylenevinylene］，MO-PPV)在薄膜态下的光致发光特性.对不同浓度MO-PPV的氯仿溶液制备的薄膜样品，在室温下测量了其荧光光谱，观察到MO-PPV在长波有一个“肩”型特征的发射峰.在对其采用曲线拟合的基础上，进一步对薄膜样品的带隙下激发谱和选择激发荧光谱进行了分析，从实验上论证了长波段的发射峰来自于激发态S1到基态S0的振转跃迁，排除了薄膜聚集体和激基缔合物发光的可能性.并基于不同浓度样品中Frank-Condon因子的强度变化，对各发射峰强度的变化进行了分析.     

氧化硅缓冲层对于退火形成锗量子点的作用研究

在化学氧化得到的二氧化硅薄层覆盖的硅衬底上,室温淀积锗膜并进行后期退火处理.实验表明,不同于传统退火过程形成大岛,通过一定工艺的控制可以获得高密度(~10¹¹ cm^-2)的均匀锗量子点.研究了后期退火温度对量子点的结构影响的局部反常规律并进行了原因分析.利用拉曼和荧光光谱研究了其应力和发光特性,发现在可见(500 nm)和近红外(1350 nm)的两个光致荧光峰出现. 关键词： 锗量子点 二氧化硅 退火     

A novel trilayer antireflection coating using dip-coating technique

We report a new structure for broadband antireflection coating by dip-coating technique, which has minimal cost and is compatible with large-scale manufacturing. The coatings are prepared by depositing SiO 2 sol-gel film on a glass substrate, subsequently depositing SiO 2 single-layer particle coating through electrostatic attraction, and depositing a final very thin SiO 2 sol-gel film to improve the mechanical strength of the whole coating structure. The refractive index of the structure changes gradually from the top to the substrate. The transmittance of a glass substrate has been experimentally found to be improved in the spectral range of 400 1 400 nm and in the incidence angle range from 0 to at least 45 . The mechanical strength is immensely improved because of the additional thin SiO 2 sol-gel layer. The surface texture can be applied to the substrates of different materials and shapes as an add-on coating.     

铁电钾钠铌酸锶钡薄膜电光性能的研究

采用溶胶-凝胶法在氧化镁单晶衬底上制备了符合化学计量比的完全填充型铁电钾钠铌酸锶钡(KNSBN)薄膜，通过X射线衍射，摇摆曲线，X射线Φ扫描，扫描电子显微镜等方法研究了薄膜的微结构，采用Adachi法研究了薄膜的电光特性. 实验发现，KNSBN薄膜在氧化镁(001)单晶衬底上沿c轴外延生长，K⁺，Na⁺的引入有效地提高了薄膜的横向电光系数r₅₁. 成分为K_0.2Na_0.2Sr_0.24Ba_0.56Nb₂O₆, K_0.2Na_0.2Sr_0.6Ba_0.2Nb₂O₆, K_0.2Na_0.2Sr_0.72Ba_0.08Nb₂O₆的三种KNSBN薄膜的r₅₁值分别为108.52pm/V, 119.98pm/V, 126.96pm/V，r₅₁的数值随Sr²⁺含量增加而增大. 关键词： 横向电光系数 钾钠铌酸锶钡 外延生长     

Near Band-Edge and Mid-Gap Photoluminescence of a ZnO Thin Film Grown on a （001） silicon Substrate

A nominally undoped wurtzite ZnO thin film of highly c-axis orientation was successfully grown on (001) silicon by metal-organic chemical vapour deposition, and its photoluminescence was measured as a function of excitation intensity at room temperature. The ZnO sample exhibited a strong near band-edge (NBE) line at 379.48nm (3.267eV) and a weak broad green band around-510 nm (2.43eV), showing a linear and sublinear excitation dependence of the luminescence intensity, respectively. No discernible intensity dependence of lineshape and emission peak was found for the NBE line. On the other hand, the peak energy of the green luminescence was found to increase nearly logarithmically with the increasing excitation intensity. The above results clearly indicate that in the ZnO epilayer, the NBE line was due to an excitonic spontaneous emission, while the mid-gap green luminescence can be assigned to the tunnel-assisted donor-acceptor pair (DAP) radiative recombination.Moreover, we obtained an energy depth β-11.74 meV for the potential wells due to the fluctuating distribution of the unintentional impurities/defects responsible for the tunnel-assisted DAP emission.