分子印迹固相萃取-化学发光测定盐酸金霉素

分子印迹聚合物;固相萃取;化学发光;流动注射;金霉素     

非饱和土-结构动力响应的多耦合周期性有限元法

真实的地基土体-隧道系统中土体及结构性质往往沿线路纵向变化.为考虑土体与结构沿纵向的变化特性,提出了一种非饱和土-结构系统动力响应分析的多耦合周期性有限元法.首先基于非饱和土的实用波动方程,采用Galerkin法推导了单节点5个自由度的非饱和土ub-pl-pg格式有限元表达式,相比于单节点9个自由度的ub-v-w格式有...     

Pb(In1/2Nb1/2)O3-Pb(Ni1/3Nb2/3)O3-PbTiO3压电陶瓷的介电、铁电和压电性能

采用两步法制备了0.30Pb(In1/2 Nb1/2)O3-(0.70-x)Pb(Ni1/3Nb2/3)O3-xPbTiO3(PIN-PNN-PT,x=0.33,0.35,0.37,0.39)压电陶瓷.研究了PIN-PNN-PT压电陶瓷的相结构、介电、铁电和压电性能.研究表明位于准同型相界(MPB)的组分0.30PIN-0.33PNN-0.37PT具有最佳电学性能,其居里温度TC、压电系数d33、平面机电耦合系数kp、自由介电常数ε二介电损耗tanδ、剩余极化Pr、矫顽场EC分别为200℃、386 pC/N、50;、2692、0.045、34 μC/cm2、18 kV/cm.结果 显示PIN-PNN-PT三元系相比于PNN-PT有更高的居里温度,同时保持了优异的压电性能.     

钙钛矿晶体的电荷复合动力学研究

本文利用紫外吸收光谱和稳态荧光光谱技术结合理论模型，研究了钙钛矿材料CH₃NH₃PbI₃晶体在光激发过程中的电荷复合动力学行为，进而获得晶体的扩散长度. 电荷载体的扩散长度是判断光电材料的重要参数. 研究通过合成两种不同缺陷态浓度的CH₃NH₃PbI₃晶体，测量这两种晶体在0.019∽4.268 μJ/cm²的激光激发下的时间分辨荧光光谱，利用动力学模型对光谱进行拟合，可以获得每个晶体的掺杂浓度，空穴浓度以及电荷复合参数. 将这些参数结合已有公式，最终可获得每个晶体的电荷载体的扩散长度.     

一维抛物型方程一种新的边值问题的解法

在建立目标一维热红外温度模型时,提出了热传导方程的一个新的边值问题;通过比较,选择了GE差分格式,求解方程,并进行了稳定性分析;采用虚拟网格点法处理边界条件,得出了GE格式的完整形式;计算实例表明,分组显示方法更适合此类边值问题的实际计算.     

Numerical study of electromagnetic scattering from one-dimensional nonlinear fractal sea surface

In recent years, linear fractal sea surface models have been developed for the sea surface in order to establish an electromagnetic backscattering model. Unfortunately, the sea surface is always nonlinear, particularly at high sea states. We present a nonlinear fractal sea surface model and derive an electromagnetic backscattering model. Using this model, we numerically calculate the normalized radar cross section (NRCS) of a nonlinear sea surface. Comparing the averaged NRCS between linear and nonlinear fractal models, we show that the NRCS of a linear fractal sea surface underestimates the NRCS of the real sea surface, especially for sea states with high fractal dimensions, and for dominant ocean surface gravity waves that are either very short or extremely long.     

Temperature dependent direct-bandgap light emission and optical gain of Ge

Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.     

基于边缘特征的中值滤波的小目标检测法

提出了一种基于边缘特征调整滤波尺寸的中值滤波算法用于小目标的检测。以图像像素的四个方向的边缘分量确定阈值,以此阈值判断像素是否为小目标区域,在此基础上调整滤波尺寸,采用中值滤波方法检测出小目标。结果表明,该算法对于小目标检测有很好的效果。     

Si基IV族异质结构发光器件的研究进展

Si基光互连具有高速度、高带宽、低功耗、可集成等特点, 有望解决集成电路的集成度在日益提高时电互连带来的问题. 在Si基光互连的关键器件中, 除了Si基光源尚未得到解决, 其他器件都已经实现, 因此Si基可集成高效光源具有十分重要的研究意义. 同为IV族元素的Ge 和GeSn因其与Si的可集成性及其独特的能带结构有望成为Si基光电集成回路中的光源. 虽然Ge是间接带隙材料, 但通过引入张应变、n型重掺杂, 或者引入Sn形成GeSn合金等能带工程手段来提高发光效率. 近年来, Si 基IV族发光材料和发光器件有许多重要进展, 本文就Si基Ge, GeSn材料发光研究中的几个关键技术节点——应变工程、掺杂技术、理论模型和器件研究——回顾了近几年国际和国内的研究进展, 并展望了Si基IV族激光器的发展趋势.