首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   79577篇
  免费   6447篇
  国内免费   5037篇
化学   23975篇
晶体学   1808篇
力学   3554篇
综合类   334篇
数学   18114篇
物理学   43276篇
  2022年   159篇
  2021年   331篇
  2020年   622篇
  2019年   926篇
  2018年   888篇
  2017年   587篇
  2016年   432篇
  2015年   398篇
  2014年   1045篇
  2013年   1645篇
  2012年   1140篇
  2011年   1704篇
  2010年   2290篇
  2009年   6805篇
  2008年   7863篇
  2007年   6330篇
  2006年   5792篇
  2005年   3943篇
  2004年   3773篇
  2003年   3996篇
  2002年   5216篇
  2001年   3745篇
  2000年   3502篇
  1999年   3348篇
  1998年   2754篇
  1997年   1909篇
  1996年   1723篇
  1995年   2196篇
  1994年   2138篇
  1993年   1598篇
  1992年   1101篇
  1991年   829篇
  1990年   676篇
  1989年   603篇
  1988年   566篇
  1987年   403篇
  1986年   194篇
  1985年   944篇
  1984年   616篇
  1983年   487篇
  1982年   641篇
  1981年   793篇
  1980年   719篇
  1979年   562篇
  1978年   584篇
  1977年   539篇
  1976年   540篇
  1975年   318篇
  1974年   356篇
  1973年   462篇
排序方式: 共有10000条查询结果,搜索用时 677 毫秒
31.
We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C60 evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C60 planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C60 is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy.  相似文献   
32.
本文研究作为双层桥模型的梁方程耦合系统,利用Leray-Schauder不动点定理,得到了一个关于这种系统的解的存在性定理,它类似于McKenna和Walter文2中关于吊桥方程的一个定理。  相似文献   
33.
 应用高压原位差热方法,直接测量了压力下锗的固化参数─—固化温度与过冷度。高压差热信号表明,当压力大于3 GPa时,锗在凝固过程中可能发生结构相变。X射线结构分析表明,在最终的样品中除GeⅠ相外,还形成GeⅢ相和GeⅣ相。  相似文献   
34.
35.
Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001  相似文献   
36.
通过TCH-600氧、氮、氢分析仪在唐钢的实际应用,重点介绍了助熔剂、坩埚、样品熔解及空白和校正过程中应注意的问题,钢铁样品分析条件的选择.  相似文献   
37.
Optimization of the surface texture for silicon carbide sliding in water   总被引:7,自引:0,他引:7  
Surface texturing has been recognized as an effective means to improve the tribological performances of sliding surfaces. Usually, generation additional hydrodynamic pressure to increase the load carrying capacity is regarded as the most significant effect of surface texture. In the case of silicon carbide sliding against identical material in water, the experimental results indicate that surface texture is also helpful to improve the running-in progress to smooth the contact surfaces, showing another reason to result in low friction. Based on the consideration of enhancing the generation of hydrodynamic pressure and improving running-in progress, a surface texture pattern, which was combined with large (circle, 350 μm in diameter) and small (rectangular, 40 μm in length) dimples, was designed to maximize the texture effect on the load carrying capacity of SiC surfaces sliding in water. The friction coefficient of such textured surface was evaluated and compared with that of untextured and those only with large or small dimples only. The friction reduction mechanisms of the patterns with different dimples in size are discussed.  相似文献   
38.
Dielectric properties of polymer-liquid crystal mixture, having constituent polymer, poly-butyl methacrylate (PBMA) and liquid crystal, cholesteryl nonanoate, are reported as a function of frequency and temperature. The measurement has been done in a temperature range of 300-375 K and frequency range of 100 Hz-10 MHz. The dielectric permittivity and dielectric loss shows significant changes with the addition of polymer molecules in liquid crystal. The significant feature of composite formation is that the pure liquid crystal and polymer do not show dielectric relaxation in the frequency range covered, while the composite shows relaxation peak at a particular frequency. The optical transmittance of pure liquid crystal and composite has also been measured and compared.  相似文献   
39.
A test for a function to be a solution of an elliptic PDE is given in terms of extensions, as solutions, from the boundaries inside the domains belonging to an isotopic family. It generalizes a result of Ehrenpreis for spheres moved along a straight line.

  相似文献   

40.
Polycrystalline Pb(Zr0.55Ti0.45)O3 thin film was deposited on Pt/Ti/SiO2/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号