Study of asymmetric charge writing on Pb(Zr,Ti)O3 thin films by Kelvin probe force microscopy |
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Authors: | Jian Shen Huizhong Zeng Zhihong Wang Shengbo Lu Huidong Huang Jingsong Liu |
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Institution: | School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China |
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Abstract: | Polycrystalline Pb(Zr0.55Ti0.45)O3 thin film was deposited on Pt/Ti/SiO2/Si(1 0 0) by radio-frequency-magnetron sputtering method, and the writing of charge bits on the surface of PZT thin film was studied by Kelvin probe force microscopy. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones. When ferroelectric polarization switching occurs, the potential difference becomes even more remarkable. A qualitative model was proposed to explain the origin of the asymmetric charge writing. It is demonstrated that the internal field in the interface layer, which is near the ferroelectric/electrode interface in ferroelectric film, is likely to be the cause for the occurrence of this phenomenon. |
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Keywords: | 73 77 77 80 Fm |
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