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为了准确、稳定、全面地获得炸药熔铸过程各个位置的温度变化情况,设计了基于布喇格光栅光谱频移的温度实时监测系统。通过光纤组网系统对炸药熔铸过程炸药指定位置的多个点同时进行实时温度监测,根据光栅的布喇格波长与光栅温度之间存在的线性关系,建立光栅布喇格波长线性频移与光栅温度的函数,获取炸药不同位置的准确温度。四个通道通过耦合器共用同一个宽带光源,每一根光纤上的5个光栅的布喇格波长相互分开。实验所用的光栅为自己设计封装好的光栅,用保偏熔接机将光栅与光纤熔接上,经解调仪获取温度数据。将获取的温度数据经Origin处理绘制时间―温度曲线。结果显示,布喇格光栅测得的温度能很好的满足实验要求。 相似文献
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Fabrication and Magnetic Properties of Co-Doped TiO2 Powders Studied by Nuclear Magnetic Resonance 下载免费PDF全文
Co0.04 Ti0.96O2 powders are fabricated by sol-gel method. The structure and magnetic properties are investigated under different annealing conditions systematically with emphasis on the influence of oxygen pressure. Pure anatase structure was acquired for all the samples annealed at 450℃ for one hour. The samples annealed in air exhibit evident room-temperature ferromagnetism (RTFM) with a small magnetic moment of 0.029μB per Co atom and coercivity Hc of 26 Oe, while the samples annealed in vacuum have strong RTFM with a larger magnetic moment of 1.18μB per Co atom and Hc of 430 Oe. The zero-field spin echo nuclear magnetic resonance spectrum of ^59Co is obtained to prove the existence of Co dusters in the latter samples, implying that the Co dusters are responsible for the strong RTFM in the samples annealed in vacuum. No Co cluster could be observed using both XPS and NMR techniques in the samples annealed in air, implying that the RTFM found in these sample sis intrinsic. 相似文献
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High-Quality InSb Grown on Semi-Insulting GaAs Substrates by Metalorganic Chemical Vapor Deposition for Hall Sensor Application 下载免费PDF全文
High-quality InSb epilayers are grown on semi-insulting GaAs substrates by metalorganic chemical vapor deposition using an indium pre-deposition technique. The influence of Ⅴ/Ⅲ ratio and indium pre-deposition time on the surface morphology, crystalline quality and electrical properties of the InSb epilayer is systematically investigated using Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction, Hall measurement and contactless sheet resistance measurement. It is found that a 2-μm-thick InSb epilayer grown at 450℃ with a Ⅴ/Ⅲ ratio of 5 and an indium pre-deposition time of 2.5s exhibits the optimum material quality, with a root-meansquare surface roughness of only 1.2 nm, an XRD rocking curve with full width at half maximum of 358 arcsec and a room-temperature electron mobility of 4.6 × 10~4 cm~2/V·s. These values are comparable with those grown by molecular beam epitaxy. Hall sensors are fabricated utilizing a 600-nm-thick InSb epilayer. The output Hall voltages of these sensors exceed 10 mV with the input voltage of 1 V at 9.3 mT and the electron mobility of 3.2 × 10~4 cm~2/V·s is determined, which indicates a strong potential for Hall applications. 相似文献
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在水热条件下,以吡唑-3-甲酸(H2pca)作为第一配体、4,4′-联吡啶为第二配体及Cu2+离子作为金属中心,制备了金属铜配合物[Cu(pca)(4,4′-bpy)]n,并用X射线晶体衍射仪对配合物的晶体结构进行了表征.实验发现:在标题配合物中第一配体pca2-离子和第二配体4,4′-bpy同时桥联金属铜离子,形成二维配位层状结构聚合物.磁性测量表明配合物中的铜离子之间存在反铁磁相互作用.生物活性实验发现标题配合物对大肠杆菌(E.coli)和金黄色葡萄球菌(S.a)均有较好的抗菌活性. 相似文献
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