ZnSe及ZnSe/GaAs异质结构中压力导致的直接禁带向间接禁带的转变

用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明，同Si、Ge、GaAs等半导体材料不同，ZnSe的X点导带底具有正的压力系数，但比г点的压力系数小，这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响，表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。     

强流脉冲高斯分布束在磁四极透镜中的非线性传输

用李代数方法分析了高斯分布下强流脉冲束在磁四极透镜中的非线性传输.在高斯分布下,束流的空间电荷势可利用Green函数算出,进而可以得到包含束流自场的粒子运动的Hamilton函数.再施加李变换,就可以得到粒子运动的各级近似解.本文给出二级近似下的结果,根据需要,还可以扩展到更高级近似.计算过程需要进行迭代,即根据每次算出的轨迹值,确定束团在三维实空间中的大小,然后再进行迭代,直到满足精度要求为止.     

改进型磁绝缘线振荡器的设计和数值模拟

 综合两种现有磁绝缘线振荡器的优点，对器件进行改进，将双渐变结构、轭流片和阻抗渐变三种增大功率的机制综合考虑，利用二维半全电磁PIC程序进行数值模拟，设计了一种新的改进型磁绝缘线振荡器，当外加电压为550kV，电流为35kA左右时，在L波段获得了6GW的峰值输出功率。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Magnetic and Transport Properties of Ferromagnetic Semiconductor GaDyN Thin Film

Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 1OK to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

A New High Efficiency Multiwave Cerenkov Generator Operating at Low Magnetic Field

With a resonant cavity inserted between the second slow-wave-structure section and the tapered wavegulde, a new structure of the multlwave Cerenkov generator (MWCG) operating at low guiding magnetic field is proposed to produce high efficiency and high power microwave. Some features and potential advantages of the proposed device are analysed. The 2.5-dimensional partlcle-in-cell simulation is employed to verify the initial expectation.The results show that, with the use of an electron beam of 640keV and 8.4kA guided by the magnetic lield of 0.6 T, a stable and monochromatic X-band microwave output of 4 GW in peak power is achieved, and the average efficiency is over 30%.     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

Giant Magneto-Impedance of Co50Ni22Ga28 Alloy with High Chemical Ordering

The microstructure of CosoNi22Ga28 ribbon with the L10 structure is examined. The band-like morphology is observed. These bands with the width in a range of 40-200 nm appear along the transverse direction of the ribbon. The giant magnetoimpedance （GMI） effect in this alloy is measured. The results show that Co5oNi22Ga28 exhibits a sharp peak of the GAI effect. The maximum GAH ratio up to 360% is detected. The GMI effect measured versus temperature shows large jumps of the magnetoimpedance amplitude at the reversal martensitic transformation temperature 240℃ and Curie temperature 375℃C respectively. The jump ratios of the magnetoimpedance amplitude examined at these temperatures are about 5 and 10, respectively.