材料力学性能检测虚拟实验的设计和开发

针对传统材料实验教学的种种弊端,将虚拟现实技术运用到材料实验教学当中,使教学过程具有交互性好,实验沉浸感强的特点。介绍了基于VRML的材料力学性能检测虚拟实验的设计思想和设计原理,对关键技术进行了阐述和分析。采用Pro/E、3DS MAX建立拉伸机、冲击机,疲劳试验机、压缩机、带表卡尺等实验仪器、工具的三维模型,并将其转换成VRML格式。然后通过VRML的事件路由机制实现了材料力学性能检测实验的全过程,如拉伸实验中,包括试样的测量、加载,拉伸过程的实现和曲线实时生成。作为材料实验教学的辅助工具,使学习过程形象化,充分发挥学生主观能动性,培养创新意识和解决工程问题能力。     

Design and numerical analysis for low birefringence silica on silicon waveguides

A new fabrication technology for three-dimensionally buried silica on silicon optical waveguide based on deep etching and thermal oxidation is presented.Using this method,a silicon layer is left at the side of waveguide.The stress distribution and effective refractive index are calculated by using finite element method and finite different beam propagation method,respectively.The results indicate that the stress of silica on silicon optical waveguide fabricated by this method can be matched in parallel and vertical directions and stress birefringence can be effectively reduced due to the side-silicon layer.     

基于硅基二氧化硅阵列波导光栅宽带低串扰单纤三向器

采用硅基二氧化硅阵列波导光栅设计并制作了宽带低串扰单纤三向器.为使三个波长间隔相差较大的输出谱获得相同的带宽,在输出波导与罗兰圆交界采用了不同结构的多模干涉器.二维有限差分束传播法的模拟结果表明,理论上1310nm、1490nm和1550nm波长的3dB带宽分别达到23nm、23.5nm和25nm,插入损耗均为4dB,1310nm波长的串扰小于-40dB,1490nm与1550nm波长间串扰小于-40dB;采用宽带光源测试结果表明,1550nm波长的3dB带宽为23nm,采用三个独立窄带光源测试结果表明,三个波长的插入损耗均为7dB,1310nm波长的串扰小于-40dB,1490nm与1550nm波长间的串扰小于-39dB,测试与模拟结果基本一致.     

Silica-Based 64-Channel Arrayed Waveguide Gratings with Double Functions

Silica-based 64-channel arrayed waveguide gratings （AWGs） with double functions and 0.4 nm （50 GHz） channel spacing have been designed and fabricated. On the same component, Gauss and flat-top output response spectra are obtained simultaneously. The test results show that when the insertion loss ranges from 3.5dB to 6.4dB, the crosstalk is better than -34dB, the 1 dB bandwidth is 0.12nm, the 3dB bandwidth is 0.218nm, and the polarization-dependent loss （PDL） is less than 0.5 dB for Gauss response. When the insertion loss ranges from 5.8dB to 7.8dB, the crosstalk is better than -30dB, the 1 dB bandwidth is 0.24nm, the 3dB bandwidth is 0.33nm, and the PDL is less than 0.2dB for fiat-top response.     

(113)面硅衬底上自组织生长的GeSi量子点及其光荧光

用透射电子显微镜观察了Si(113)衬底上由固态源分子束外延生长的自组织量子点的形貌,测量了其原生及退火后低温下的光荧光谱.对所得结果进行了分析. 关键词：