Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition

The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots(QDs) as dislocation filters by metalorganic chemical vapor deposition(MOCVD) is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10~7 cm~(-2) in the GaAs/Si sample without QDs,a density of 2×10~6 cm~(-2) is achieved in the sample with QD dislocation filters.     

光通信链路中集成芯片的收发一体工作

在PIN光电探测器(PIN-PD)结构的垂直方向上集成垂直腔面发射激光器(VCSEL)结构单元,实现了收发一体式工作的集成光电芯片对,可用于进一步提高光互连的性能。该集成光电芯片可以同时对两个波段进行收发一体工作,一端进行中心波长为805 nm的光信号的发送和中心波长为850 nm的光信号的接收,另一端进行中心波长为850 nm的光信号的发送和中心波长为805 nm的光信号接收。仿真优化805 nm波长处光信号发送端的结构与性能,理论分析结构中VCSEL单元和PIN-PD单元工作时的电学隔离和光学解耦,最终证实本结构可以同时进行收发一体的工作。     

强激光对星载光电探测系统的干扰与破坏研究

建立了激光辐照星载光电探测器的数学模型,对激光干扰和破坏星载光电系统的机理进行了研究,分析了激光光束与探测器光轴的偏角对干扰和破坏的影响.以CO2激光辐照HgCdTe探测器的实例,研究了强激光对探测单元的破坏,得到其损伤阈值曲线,并从理论上证明了强激光对星载光电探测系统干扰和破坏的可行性.     

Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates

We fabricate a Ga As-based In Ga As/In Ga As P multiple quantum wells(MQWs) laser at 1.55 μm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature In P layer and a thick In P buffer layer are grown on Ga As substrates by low-pressure metal organic chemical vapor deposition technology. Then, highquality MQWs laser structures are grown on the In P buffer layer. Under quasi-continuous wave(QCW) condition, a threshold current of 476 m A and slope efficiency of 0.15 m W/m A are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is1549.5 nm at 700 m A. The device is operating for more than 2000 h at room-temperature and 600 mA.     

Influence of GaAs substrate on the transmission performance of epitaxially grown Fabry-P'erot filter

The influence of GaAs substrate on the transmission performance of a multi-film Fabry-P’erot filter (FPF),fabricated by metalorganic chemical vapor deposition epitaxial growth on GaAs substrate,is investigated using the transfer matrix method.On the basis of the theoretical simulation,we determine that the quality of the resonant transmission peak of this epitaxially grown FPF (EG-FPF) deteriorates through splitting when the substrate is taken into account.Rapid periodic oscillation of peak-transmittivity along with the alteration of substrate thickness is also observed in the simulation results.Finally,a remarkably improved transmission performance of the EG-FPF is obtained by thinning the substrate down to a suitable thickness range through well-controlled grinding and polishing.     

高分辨率电子能量损失谱在材料科学中的应用

简要介绍了FEI Titan80-300STEM扫描透射电镜中装配的Wien-filter型能量单色器(monochromator).文章特别指出,装配有能量单色器的FEI Titan80-300STEM扫描透射电镜,可以直接给出高能量分辨率(~0.1eV)的电子能量损失谱.利用高分辨电子能量损失谱,在高能损失区,对于K或L能级自然宽度(natural width of energylevel)小于0.5eV的元素,可以获得更细致的的近限精细结构(energy-loss near-edge structure),更有利于解析其电子结构;在低能损失区,可以用于精确地确定半导体材料的带隙(bandgap)以及p型掺杂引起的带隙能的变化.     

半导体材料的激光辐照效应计算和损伤阈值分析

在激光对抗中,探测器容易受到激光损伤,为此研究了连续强激光对半导体材料的损伤机理,建立了氧碘化学激光器辐照InSb圆板型靶材的二维物理模型。在圆柱坐标系中利用积分变换法,求解热传导和热弹性力学方程组。得到由激光辐照引起的温度场和热应力场的瞬态分布。经过严格的理论分析,计算出InSb材料的激光破坏阈值,讨论了,不同的辐照时间和光斑半径对破坏阈值的影响。研究发现其破坏形态为熔融破坏,一般不会出现解理或炸裂现象,这一结果与相关实验报道一致。最后分析了与温度有关的非线性参量对损伤阈值的影响。     

High-reflectivity high-contrast grating focusing reflector on silicon-on-insulator wafer

A high-contrast grating(HCG) focusing reflector providing phase front control of reflected light and high reflectivity is proposed and fabricated.Basic design rules to engineer this category of structures are given in detail.A 1550 nm TM polarized incident light of 11.86 mm in focal length and 0.8320 in reflectivity is obtained in experiment.The wavelength dependence of the fabricated HCGs from 1530 nm to 1580 nm is also tested.The test results show that the focal length is in the range of 11.81-12 mm,which is close to the designed focal length of 15 mm.The reflectivity is almost above 0.56 within a bandwidth of 50 nm.At a distance of 11.86 mm,the light is focused to a round spot with the highest concentration,which is much smaller than the size of the incident beam.The FWHM of the reflected light beam decreases to 120 nm,and the intensity increases to 1.18.     

电子显微学进展及其在材料科学中的应用

文章简要介绍了高分辨电子显微学方法和电子能量损失谱的进展.文中特别指出,随着电子显微技术的发展,原子分辨电子显微图像对结构问题的深入研究有重要作用.装备有能量单色器的新一代电子显微镜,可以直接给出高能量分辨率的电子能量损失谱(优于 0.1eV).这些先进技术方法的应用,推动了晶体结构学、材料科学、物理学、纳米科学及生命科学的发展,也为解决很多重要结构问题奠定了基础.文章重点讨论了几个典型功能材料体系的结构问题:利用大角度会聚束电子衍射技术,分析了应变硅器件中的应变分布;利用原位电子显微技术,研究了新型电子铁电体LuFe2O4电荷序和物理性能的关系;深入探讨了强关联体系中电子关联效应对电子能量损失谱和电子结构的影响.     

一种设计环形汇聚光栅反射镜的新方法

提出了一种利用数学变换来快速设计环形汇聚光栅反射镜的方法.通过分析具体的物理场景,抽象出已有条形汇聚光栅的"线"汇聚特性与所要设计的"点"汇聚特性在数学上对应的变换关系,然后用该数学变换对条形汇聚光栅进行外形上的变换,外形变换后的条形光栅即为可以实现"点"汇聚的环形光栅.用有限元算法对设计的环形汇聚光栅进行仿真,仿真证明采用该方法设计的环形光栅可以很好地实现高反、高汇聚.采用这一方法,设计了直径为29.788μm的环形光栅反射镜,当垂直入射的径向偏振光从设计的环形光栅表面反射回来后将发生汇聚,汇聚焦点位于环形光栅表面10μm处.经计算,反射镜的数值孔径为0.8302,反射率为0.9163,在焦点所在的汇聚面上,汇聚光栅电场分布的半高宽为1.5548μm.