使用分子量级前躯体制备CuInSe2及其合金并应用于光伏发电

黄铜矿铜铟硒化合物CuInSe2及其与硫或嫁的合金CuIn(Se,S)2或CuInGa(Se,S)2,即所说的CIGS,已通过20%的实验室规模器件光电转换效率展示了其地面光伏应用的巨大潜力。为了减少初始资金成本,提高材料利用率,科研工作者们已经尝试了许多努力通过非真空制程沉积CIGS。这些制程包括电镀工艺,基于颗粒（浆或纳米颗粒）的制程和基于分子量级前趋体的制程。原则上,分子量级前趋体可以使组分元素达到充分混合,可以最大程度地实现组份在基板不同区域的均一分布。这对于一个复杂的涉及到五个主要元素的化合物系统尤为重要。从这个角度来看,分子前趋体的方法具有大面积均匀沉积铜铟镓硒的巨大潜力。这篇综述将着重讨论使用分子前趋体沉积铜铟镓硒制程的最新发展。     

Se(Ⅳ)对水杨酸与DNA相互作用的影响

利用荧光光谱法和紫外吸收光谱法研究了Se(Ⅳ)对水杨酸与DNA的结合模式、结合常数的影响.结果表明,Se(Ⅳ)的加入使水杨酸与DNA由嵌入式结合转变为沟槽结合,结合作用力由琉水作用力转变为氢键和范德华力,同时结合常数变大,说明Se(Ⅳ)对水杨酸与DNA的结合起促进作用,这可能是由于Se(Ⅳ)和水杨酸形成络合物,又通过水...     

Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift

In order to investigate the inherent polarization intensity in InGaN/GaN multiple quantum well(MQW) structures,the electroluminescence(EL) spectra of three samples with different GaN barrier thicknesses of 21.3 nm, 11.4 nm, and 6.5 nm are experimentally studied. All of the EL spectra present a similar blue-shift under the low-level current injection,and then turns to a red-shift tendency when the current increases to a specific value, which is defined as the turning point.The value of this turning point differs from one another for the three InGaN/GaN MQW samples. Sample A, which has the GaN barrier thickness of 21.3 nm, shows the highest current injection level at the turning point as well as the largest value of blue-shift. It indicates that sample A has the maximum intensity of the polarization field. The red-shift of the EL spectra results from the vertical electron leakage in InGaN/GaN MQWs and the corresponding self-heating effect under the high-level current injection. As a result, it is an effective approach to evaluate the polarization field in the InGaN/GaN MQW structures by using the injection current level at the turning point and the blue-shift of the EL spectra profiles.     

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC

We have investigated the electron affinity of Si-doped AlN films(N_(Si)= 1.0 × 10~(18)–1.0 × 10_(19)cm~(-3)) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition(MOCVD) under low pressure on the ntype(001)6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy(UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy(XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.     

基于双暗环效应的折射率的测量装置

本实验装置利用全反射形成的双暗环效应, 分析得出两个圆形暗环直径之比与待测物体折射率的数 学解析关系. 以激光笔、 玻璃容器、 智能手机等为主要测量装置进行测量, 建立了测量液体折射率的新方法, 经实验 证明, 此方法操作简便可行、 精确度和稳定性高. 将此原理结合手机 A P P, 使折射率的测量更加简便快捷. 人们可用 此装置测量食用油的纯度或果汁等食品的可溶性固形体的含量, 由此为生产技术或社会生活带来便利     

Physical implications of activation energy derived from temperature dependent photoluminescence of InGaN-based materials

Physical implications of the activation energy derived from temperature dependent photoluminescence(PL) of In Ga Nbased materials are investigated, finding that the activation energy is determined by the thermal decay processes involved.If the carrier escaping from localization states is responsible for the thermal quenching of PL intensity, as often occurs in In Ga N materials, the activation energy is related to the energy barrier height of localization states. An alternative possibility for the thermal decay of the PL intensity is the activation of nonradiative recombination processes, in which case thermal activation energy would be determined by the carrier capture process of the nonradiative recombination centers rather than by the ionization energy of the defects themselves.     

The residual C concentration control for low temperature growth p-type GaN

In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied.Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:(i) the C concentration decreases with the increase of growth pressure;(ii) we have found there exists a Ga memory effect when changing the Cp_2 Mg flow which will lead the growth rate and C concentration increase along the increase of Cp_2 Mg flow;(iii) annealing outside of metal–organic chemical vapor deposition(MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.     

吡咯-(3,4-乙烯二氧噻吩)共聚物有序纳米阵列薄膜的制备及表征

采用阳极氧化铝(AAO)模板电化学沉积方法, 合成了1种新型吡咯-(3,4-乙烯二氧噻吩)(PE)共聚物纳米线阵列薄膜, 作为锂离子电池电极材料, 其表现出较高的比容量(1426.1 mA·h/g, 充放电电流密度为100 mA/g)和很好的循环稳定性(在充放电循环300圈之后, 比容量仍然保持在1400 mA·h/g以上). 这种多组分共聚物纳米线阵列有可能成为下一代长寿命、 高性能的锂离子电池电极材料而被广泛开发.     

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron blocking layer(EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In_(0.04)Ga_(0.96)N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al_xGa_(1-x)N hole blocking layer(HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al_xGa_(1-x)N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al_xGa_(1-x)N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD.     

控制致裂岩体应力量测的模型试验研究

本文阐明了控制致裂岩体应力量测的基本原理、试验方法。介绍了几种控制致裂的模型试验结果及其分析，证明了控制致裂理论的正确性。