Effects on the evolution of microstructure and properties of low-silicon cast aluminum alloys in service

ABSTRACT

The microstructure evolution and property change of four kinds of low silicon cast aluminum alloy exposed to heat for 0–50?h at 200°C were studied by means of Brinell hardness test, tensile property test, friction and wear property test and XRD analysis. The results show that with increasing thermal exposure time, the tensile strength of each group of samples decreased and the amount of wear increased. The tensile strength of samples with more Si content decreased slowly. When the time increased to 50?h, the increase of wear loss was the largest. The hardness of samples after thermal exposure increases compared with that before thermal exposure. The residual stress of (311) diffraction crystal surface of AlSi3.5Mg0.66 under different thermal exposure time was measured. The type of residual stress changed from residual tensile stress to residual compressive stress after thermal exposure. There is an abnormal phenomenon that the hardness of the sample increased and the amount of wear increased, and it is evident that the distribution of residual stress was inhomogeneous after thermal exposure. It is found that with increasing thermal exposure time to 50?h, the average lattice distortion ε of the low-index crystal plane and the high-index crystal plane in the aluminum alloys gradually increased.     

快凝Pd82Si18合金原子团簇的演化特性及遗传机制

采用分子动力学(MD)模拟计算,对Pd82Si18合金快凝过程中基本原子团簇的遗传特性、演化趋势和结构稳定性进行了研究.团簇类型指数法(CTIM)分析表明:非晶固体中Si原子为中心的(102/14418/1551)双帽阿基米德反棱柱(BSAP)团簇数目占据优势.快凝过程中,BSAP结构团簇具有最大的遗传分数,并且其他以Si原子为中心的Kasper团簇大多都会向BSAP结构团簇转变.通过对Si原子为中心的Kasper基本团簇电子性质第一性原理计算发现,体系中BSAP团簇的结合能最低,结构稳定性较高,与分子动力学计算结果一致.     

硅衬底GaN基LED薄膜芯片的应力调制

将Si衬底GaN基LED外延薄膜经晶圆键合、去硅衬底等工艺制作成垂直结构GaN基LED薄膜芯片,并对其进行不同温度的连续退火,通过高分辨X射线衍射(HRXRD)研究了连续退火过程中GaN薄膜芯片的应力变化。研究发现:垂直结构LED薄膜芯片在160~180℃下退火应力释放明显,200℃时应力释放充分,GaN的晶格常数接近标准值。继续升温应力不再发生明显变化,GaN薄膜的晶格常数只在标准晶格常数值附近波动。扫描电子显微镜给出的bonding层中Ag-In合金情况很好地解释了薄膜芯片应力的变化。     

Existence of heteroclinic orbits in a novel three-order dynamical system

In this paper,we design a novel three-order autonomous system.Numerical simulations reveal the complex chaotic behaviors of the system.By applying the undetermined coefficient method,we find a heteroclinic orbit in the system.As a result,the Si’lnikov criterion along with some other given conditions guarantees that the system has both Smale horseshoes and chaos of horseshoe type.     

Uv Dye Lasers

The moat important property of visible dye lasere, that is continuous wave length tuning, stimulated the search for dyes capable to lase UV. And they were founed in 1668¹. Now the need In tunable UV laeers for applications in spectroacopy, photochemistry, isotope separation, remote air and sea probing, etc. ie only more clearly Been. The object of thie paper is to review shortly some recent advances In UV dye lasers.     

Influence of methyl‐modified silyl groups on the properties of polymers and Si/B/N/C ceramics derived from N‐silylated borazine derivatives

Thermal silazane cleavage of dichloroboryldisilylamines (SiCl_mMe_3?m)N(SiMe₃)(BCl₂) (1: m = 1; 2: m = 2) at 196 °C leads to the borazine derivates [(SiCl_mMe_3?m)NB(Cl_nMe_1?n)]₃ (3: m = 1, n = 0.185; 4: m = 2, n = 0.111) characterized by NMR and IR spectroscopy and mass spectrometry. Single‐crystal X‐ray diffraction structure analyses reveal (BN)₃ units with unusual twisted boat conformations in both compounds. Additionally, more detailed studies are done to clear up the function of the by‐products (SiCl_mMe_3?m)N(SiClMe₂)(BClMe) formed during the cyclization step leading to asymmetrically boron substituted borazine derivatives. The single‐source precursors 3 and 4 were cross‐linked with methylamine producing polymers 3P and 4P, which were transformed into black amorphous materials with ceramic yields of 20.8 % and 50.3 %, respectively. Ceramic 4C (Si_1.00B_0.98 N_2.55 C_1.37O_0.05) was further investigated by ¹¹B and ²⁹Si magic angle spinning (MAS) NMR spectroscopy. A combined study of high‐temperature TG analyses and X‐ray powder diffraction analyses confirms the thermal stability of 4C up to 1670 °C. Copyright © 2012 John Wiley & Sons, Ltd.